Giant magnetoresistance in La₀.₇Pb₀.₃MnO₃ thin film
Epitaxial thin films of La₀.₇Pb₀.₃MnO₃ have been grown on (100) LaAlO₃ and (110) SrTiO₃ substrates by dc magnetron sputtering. The magnetic-field and temperature-dependent resistivity of as-deposited and post-annealed films was examined. At H=10kOe the maximum observed magnetoresistance ratio (R0-RH...
Збережено в:
Дата: | 1998 |
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Автор: | |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
1998
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Назва видання: | Физика низких температур |
Теми: | |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/175479 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Giant magnetoresistance in La₀.₇Pb₀.₃MnO₃ thin film / S.I. Khartsev // Физика низких температур. — 1998. — Т. 24, № 5. — С. 457-461. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of UkraineРезюме: | Epitaxial thin films of La₀.₇Pb₀.₃MnO₃ have been grown on (100) LaAlO₃ and (110) SrTiO₃ substrates by dc magnetron sputtering. The magnetic-field and temperature-dependent resistivity of as-deposited and post-annealed films was examined. At H=10kOe the maximum observed magnetoresistance ratio (R0-RH)/R0 was 62%. The bolometric response to 0.94- m low-frequency modulated radiation in the film with the temperature coefficient of resistance dlnR/dT= 14% was studied. The transport properties are described using Zhang`s spin-polaron theory. An unusual approach to stabilizing the film temperature at the point corresponding to the maximum of the magnetoresistance ratio and responsivity is discussed. |
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