Quantization in magnetoresistance of strained InSb whiskers

• Дата: 2019
• Автори: Druzhinin, A., Ostrovskii, I., Khoverko, Y., Liakh-Kaguy, N.
• Формат: Стаття
• Мова: English
• Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2019
• Назва видання: Физика низких температур
• Теми: Низькотемпературний магнетизм
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/176090
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Quantization in magnetoresistance of strained InSb whiskers / A. Druzhinin, I. Ostrovskii, Y. Khoverko, N. Liakh-Kaguy // Физика низких температур. — 2019. — Т. 45, № 5. — С. 599-604. — Бібліогр.: 27 назв. — англ.

Strain influence on the longitudinal magnetoresistance for the n-type conductivity InSb whiskers doped by Sn to concentration 6·10¹⁶–6·10¹⁷ сm⁻³ was studied in the temperature range 4.2–40 K and magnetic field up to 10 T. The Shubnikov–de Haas oscillations at low temperatures were observed in the strained and unstrained samples in all range of doping concentrations and magnetic fields. The character of longitudinal magnetoresistance dependences was analyzed and compared with theoretical one. The whisker magnetoresistance alters its sign with increasing magnetic field. It is positive at weak magnetic fields and becomes negative at higher magnetic fields. Possible mechanism of the large value of negative magnetoresistance (NMR) was discussed in the InSb whiskers with doping concentration in the vicinity to metal–insulator transition. The origin of large NMR was explained by the existence of classical size effect and boundary scattering during conductance in subsurface whisker layers.