Mapping of 2D contact perturbations by electrons on a helium film
A promising way to investigate 2D contact phenomena is proposed. This method is based on the idea ot depositing surface state electrons (SSE) on a thin layer of liquid helium covering the surface of a solid sample containing a 2D charge carrier system. The density of SSE adjusts to screen contact-...
Збережено в:
| Дата: | 1998 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
1998
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| Назва видання: | Физика низких температур |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/176402 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Mapping of 2D contact perturbations by electrons on a helium film / E. Teske, P. Wyder, P. Leiderer, V. Shikin // Физика низких температур. — 1998. — Т. 24, № 2. — С. 163-165. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | A promising way to investigate 2D contact phenomena is proposed. This method is based on the idea
ot depositing surface state electrons (SSE) on a thin layer of liquid helium covering the surface of a solid
sample containing a 2D charge carrier system. The density of SSE adjusts to screen contact-induced
perturbations ot the electrostatic potential across the sample. As a result, the helium layer thickness
varies due to the variation of the electrostatic pressure thus providing a map This map may be read off
interferometrically by a technique already employed tor the investigation ot multi-electron dimples on
helium. We have realized this mapping for a structured electrode as a test sample to demonstrate the
resolution of the method. |
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