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Effect of an ac electric field on weak electron localization in Bi films

We have studied the effects of weak localization and electron-electron interaction in the conductivity of Bi films at temperatures between 1.1 and 4.2 К in the presence of a high-frequency electric field ( - 9.4 GHz). The experiments were carried out under conditions of no appreciable overheating of...

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Bibliographic Details
Main Authors: Belevtsev, B.I., Hasse, J., Anopchenko, A.S., Beliayev, E.Yu.
Format: Article
Language:English
Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 1996
Series:Физика низких температур
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Online Access:http://dspace.nbuv.gov.ua/handle/123456789/176409
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Summary:We have studied the effects of weak localization and electron-electron interaction in the conductivity of Bi films at temperatures between 1.1 and 4.2 К in the presence of a high-frequency electric field ( - 9.4 GHz). The experiments were carried out under conditions of no appreciable overheating of electrons due to a microwave radiation. The data obtained permit us to examine the influence of temperature on quantum corrections Δδ(Ω) at high-frequency electric field more comprehensively and reliably than in earlier works. The experimental dependences Δδ(Ω, T) are found to be in good agreement with the known theoretical models.