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Evolution of a dislocation structure during the growth silicon single crystals of n– and p–type
The kinetics of the formation of perfect n– and p–type silicon single crystals is considered. The peculiarity of the formation of point and linear defects in the process of a controlled phase transformation of a liquid–solid is established. The effect of supersaturation by vacancies of the direction...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2020
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| Series: | Вопросы атомной науки и техники |
| Subjects: | |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/194344 |
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| Summary: | The kinetics of the formation of perfect n– and p–type silicon single crystals is considered. The peculiarity of the formation of point and linear defects in the process of a controlled phase transformation of a liquid–solid is established. The effect of supersaturation by vacancies of the direction of predominant growth and concentration of impurities on the formation and removal of edge and screw dislocations is determined. The effect of linear defects on the scattering and recombination of mobile current carriers is revealed. The possibilities of increasing the stability and efficiency of silicon semiconductor devices are discussed. |
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