2025-02-23T03:50:02-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-194344%22&qt=morelikethis&rows=5
2025-02-23T03:50:02-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-194344%22&qt=morelikethis&rows=5
2025-02-23T03:50:02-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T03:50:02-05:00 DEBUG: Deserialized SOLR response
Evolution of a dislocation structure during the growth silicon single crystals of n– and p–type

Evolution of a dislocation structure during the growth silicon single crystals of n– and p–type

The kinetics of the formation of perfect n– and p–type silicon single crystals is considered. The peculiarity of the formation of point and linear defects in the process of a controlled phase transformation of a liquid–solid is established. The effect of supersaturation by vacancies of the direction...

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Bibliographic Details
Main Authors: Azarenkov, N.A., Semenenko, V.E., Stervoyedov, N.G.
Format: Article
Language:English
Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2020
Series:Вопросы атомной науки и техники
Subjects:
Pure materials and the vacuum technologies
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/194344
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2025-02-23T03:50:02-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-194344%22&qt=morelikethis
2025-02-23T03:50:02-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-194344%22&qt=morelikethis
2025-02-23T03:50:02-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T03:50:02-05:00 DEBUG: Deserialized SOLR response

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