2025-02-23T03:37:24-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-194344%22&qt=morelikethis&rows=5
2025-02-23T03:37:24-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-194344%22&qt=morelikethis&rows=5
2025-02-23T03:37:24-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T03:37:24-05:00 DEBUG: Deserialized SOLR response
Evolution of a dislocation structure during the growth silicon single crystals of n– and p–type
The kinetics of the formation of perfect n– and p–type silicon single crystals is considered. The peculiarity of the formation of point and linear defects in the process of a controlled phase transformation of a liquid–solid is established. The effect of supersaturation by vacancies of the direction...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2020
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| Series: | Вопросы атомной науки и техники |
| Subjects: | |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/194344 |
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