Effect of electronic radiation on the evolution of nanostructure and creep of Zr at the temperature of 670 K

The effect of electron irradiation on the creep and evolution of the zirconium nanostructure obtained by the SPD method and previously relaxed by ultrasound is studied. It has been shown that the electron irradiation (with a dose of D = 5∙10¹⁹ cm⁻² and energy E = 10 МeV) does not change the characte...

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Збережено в:
Бібліографічні деталі
Дата:2020
Автори: Karaseva, E.V., Mats, A.V., Mats, V.A., Savchuk, E.S., Sokolenko, V.I., Тitоv, D.V.
Формат: Стаття
Мова:English
Опубліковано: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2020
Назва видання:Вопросы атомной науки и техники
Теми:
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/194351
Теги: Додати тег
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Effect of electronic radiation on the evolution of nanostructure and creep of Zr at the temperature of 670 K / E.V. Karaseva, A.V. Mats, V.A. Mats, E.S. Savchuk, V.I. Sokolenko, D.V. Тitоv // Problems of atomic science and tecnology. — 2020. — № 1. — С. 91-95. — Бібліогр.: 17 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Резюме:The effect of electron irradiation on the creep and evolution of the zirconium nanostructure obtained by the SPD method and previously relaxed by ultrasound is studied. It has been shown that the electron irradiation (with a dose of D = 5∙10¹⁹ cm⁻² and energy E = 10 МeV) does not change the character of the deformed zirconium nanostructure, but initiates the return processes at the grain boundaries and in the border areas, which leads to the softening of the material. The previously relaxation of internal stresses by ultrasound allows one to preserve a sufficiently high level of the strength and plasticity of nanostructured Zr after electron irradiation by reducing the intensity of dynamic recrystallization and activating an additional slip system in the creep process at 670 K.