Design of a detecting module based on a single-sided silicon photosensor array with scintilators

• Main Authors: Kiprich, S.K., Maslov, N.I., Shlyahov, I.N.
• Format: Article
• Language: English
• Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2020
• Series: Вопросы атомной науки и техники
• Subjects: Detectors and nuclear radiation detection
• Online Access: http://dspace.nbuv.gov.ua/handle/123456789/194546

A design of a detecting module based on a silicon front side illuminated single-sided photosensor array with scintillators has been developed. The array is made on wafers with a diameter of 100 mm from high-resistance N-type silicon with a specific resistance of 5…10 kOhm⋅cm, lifetime of minority charge carriers τ >1000 μs and orientation <100>. The elimination of shielding of the photosensitive surface of the array by electrical connection elements is ensured by the use of aluminum-polyimide microcables provided that they are placed on the front side of the array in the gaps between the scintillators. The installation of front-end electronics on the board on the reverse side of the array within the array area allows to create a detecting module of compact size with minimal loss of effective recording area. A module with 64 dete ction cells located in a pitch of 4.1 mm does not exceed an area of 35×35 mm.