Modeling the response of a planar silicon detector when measuring the exposure dose rate in the energy range from 5 keV to 10MeV
The main advantages of using silicon semiconductor detectors in dosimetry in comparison with traditional detectors are considered. The shortcomings are analyzed and possible methods for their elimination are proposed. One of the proposed methods makes it possible to increase the efficiency of detect...
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
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| Цитувати: | Modeling the response of a planar silicon detector when measuring the exposure dose rate in the energy range from 5 keV to 10MeV / V.N. Dubina, N.I. Maslov, I.N. Shlyahov // Problems of atomic science and tecnology. — 2020. — № 5. — С. 105-110. — Бібліогр.: 9 назв. — англ. |
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irk-123456789-1945752023-11-27T16:43:13Z Modeling the response of a planar silicon detector when measuring the exposure dose rate in the energy range from 5 keV to 10MeV Dubina, V.N. Maslov, N.I. Shlyahov, I.N. Computing and modelling systems The main advantages of using silicon semiconductor detectors in dosimetry in comparison with traditional detectors are considered. The shortcomings are analyzed and possible methods for their elimination are proposed. One of the proposed methods makes it possible to increase the efficiency of detecting gamma quantum in the energy range 0.1…10MeV. The requirements are formulated to optimize the design of detectors operating in a wide range of dose rates and gamma radiation energies by computer simulation. Mathematical calculations and computer simulations determine the dosimeter design, materials and thicknesses γ–converter. The mechanisms of modeling the absorbed dose in air and ambient dose in silicon detectors with a thickness of 300 μm, sizes (5×5)mm² and (1.8×1.8)mm², in the range of incident γ–ray energies from 5keV to 10 MeV are presented. Розглянуто основні переваги застосування кремнієвих напівпровідникових детекторів у задачах дозиметрії в порівнянні з традиційними детекторами. Проаналізовано недоліки та запропоновані можливі методи їх усунення. Один із запропонованих методів дозволяє збільшити ефективність реєстрації гамма-квантів у діапазоні енергій 0,1…10 МэВ. Сформульовано вимоги, необхідні для оптимізації конструкції детекторів, які працюють у широкому діапазоні потужностей доз і енергії гамма–випромінювання, методом комп’ютерного моделювання. Проведені математичні розрахунки і комп’ютерне моделювання визначають конструкцію дозиметра, матеріали і товщину γ–конвертера. Наводяться механізми моделювання поглиненої дози в повітрі і амбієнтної дози в кремнієвих детекторах товщиною від 300 мкм, розмірами (5×5)мм² и (1,8×1,8)мм², у діапазоні енергій падаючого γ–випромінювання від 5 кеВ до 10 МеВ. Рассмотрены основные преимущества применения кремниевых полупроводниковых детекторов в задачах дозиметрии по сравнению с традиционными детекторами. Проанализированы недостатки и предложены возможные методы их устранения. Один из предложенных методов позволяет увеличить эффективность регистрации гамма-квантов в диапазоне энергий 0,1…10 МэВ. Сформулированы требования, необходимые для оптимизации конструкции детекторов, работающих в широком диапазоне мощностей доз и энергии гамма–излучения, методом компьютерного моделирования. Проведенные математические расчеты и компьютерное моделирование определяют конструкцию дозиметра, материалы и толщину γ–конвертера. Приводятся механизмы моделирования поглощенной дозы в воздухе и амбиентной дозы в кремниевых детекторах толщиной от 300 мкм, размерами (5×5)мм² и (1,8×1,8)мм², в диапазоне энергий падающего γ–излучения от 5 кэВ до 10 МэВ. 2020 Article Modeling the response of a planar silicon detector when measuring the exposure dose rate in the energy range from 5 keV to 10MeV / V.N. Dubina, N.I. Maslov, I.N. Shlyahov // Problems of atomic science and tecnology. — 2020. — № 5. — С. 105-110. — Бібліогр.: 9 назв. — англ. 1562-6016 PACS: 03.65.Pm, 03.65.Ge, 61.80.Mk http://dspace.nbuv.gov.ua/handle/123456789/194575 en Вопросы атомной науки и техники Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
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| language |
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Computing and modelling systems Computing and modelling systems |
| spellingShingle |
Computing and modelling systems Computing and modelling systems Dubina, V.N. Maslov, N.I. Shlyahov, I.N. Modeling the response of a planar silicon detector when measuring the exposure dose rate in the energy range from 5 keV to 10MeV Вопросы атомной науки и техники |
| description |
The main advantages of using silicon semiconductor detectors in dosimetry in comparison with traditional detectors are considered. The shortcomings are analyzed and possible methods for their elimination are proposed. One of the proposed methods makes it possible to increase the efficiency of detecting gamma quantum in the energy range 0.1…10MeV. The requirements are formulated to optimize the design of detectors operating in a wide range of dose rates and gamma radiation energies by computer simulation. Mathematical calculations and computer simulations determine the dosimeter design, materials and thicknesses γ–converter. The mechanisms of modeling the absorbed dose in air and ambient dose in silicon detectors with a thickness of 300 μm, sizes (5×5)mm² and (1.8×1.8)mm², in the range of incident γ–ray energies from 5keV to 10 MeV are presented. |
| format |
Article |
| author |
Dubina, V.N. Maslov, N.I. Shlyahov, I.N. |
| author_facet |
Dubina, V.N. Maslov, N.I. Shlyahov, I.N. |
| author_sort |
Dubina, V.N. |
| title |
Modeling the response of a planar silicon detector when measuring the exposure dose rate in the energy range from 5 keV to 10MeV |
| title_short |
Modeling the response of a planar silicon detector when measuring the exposure dose rate in the energy range from 5 keV to 10MeV |
| title_full |
Modeling the response of a planar silicon detector when measuring the exposure dose rate in the energy range from 5 keV to 10MeV |
| title_fullStr |
Modeling the response of a planar silicon detector when measuring the exposure dose rate in the energy range from 5 keV to 10MeV |
| title_full_unstemmed |
Modeling the response of a planar silicon detector when measuring the exposure dose rate in the energy range from 5 keV to 10MeV |
| title_sort |
modeling the response of a planar silicon detector when measuring the exposure dose rate in the energy range from 5 kev to 10mev |
| publisher |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| publishDate |
2020 |
| topic_facet |
Computing and modelling systems |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/194575 |
| citation_txt |
Modeling the response of a planar silicon detector when measuring the exposure dose rate in the energy range from 5 keV to 10MeV / V.N. Dubina, N.I. Maslov, I.N. Shlyahov // Problems of atomic science and tecnology. — 2020. — № 5. — С. 105-110. — Бібліогр.: 9 назв. — англ. |
| series |
Вопросы атомной науки и техники |
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2025-07-16T21:57:14Z |
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2025-07-16T21:57:14Z |
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| fulltext |
MODELING THE RESPONSE OF A PLANAR SILICON
DETECTOR WHEN MEASURING THE EXPOSURE DOSE
RATE IN THE ENERGY RANGE FROM 5 keV TO 10MeV
V.N.Dubina∗, N. I.Maslov, I.N.Shlyahov
National Science Center ”Kharkiv Institute of Physics and Technology”, 61108 Kharkiv, Ukraine
(Received July 8, 2020)
The main advantages of using silicon semiconductor detectors in dosimetry in comparison with traditional detectors
are considered. The shortcomings are analyzed and possible methods for their elimination are proposed. One of
the proposed methods makes it possible to increase the efficiency of detecting gamma quantum in the energy range
0.1...10MeV . The requirements are formulated to optimize the design of detectors operating in a wide range of dose
rates and gamma radiation energies by computer simulation. Mathematical calculations and computer simulations
determine the dosimeter design, materials and thicknesses γ-converter. The mechanisms of modeling the absorbed
dose in air and ambient dose in silicon detectors with a thickness of 300µm, sizes (5× 5)mm2 and (1.8× 1.8)mm2,
in the range of incident γ-ray energies from 5 keV to 10MeV are presented.
PACS: 03.65.Pm, 03.65.Ge, 61.80.Mk
1. INTRODUCTION
Modern industry produces a large number of gamma
radiation dosimeters, however, their error reaches
tens of percent, and the working interval of ener-
gies, as a rule, does not go beyond the range of
50 keV ... 3MeV . Based on the experience [1, 2], it
is possible to expand this range to some of keV. This
expansion is in particular associated with the study of
secondary radiation, which tends to be redistributed
to extremely low energies [3]. Improving the accu-
racy of dosimeteric measurements and expanding the
reduced interval continues to be a fairly urgent task.
To detect a γ-quantum, it is necessary to register its
interaction with the medium. Gamma radiation is
characterized by a large penetrating and weak ion-
izing ability. Gamma-ionization of the medium is
carried out by means of secondary electrons (photo-
electric effect, Compton-effect, pair production). The
charge released in is an electric impulse, the ampli-
tude of which is proportional to the energy lost by the
photon. The use of semiconductor detectors for mea-
suring absorbed and exposure doses is limited by the
absence of a direct dependence of dose sensitivity on
the energy of incident radiation. The results of com-
puter simulation of the assembly, as well as a change
in the level of discrimination of incoming pulses show
possible ways to create “flat response” for the wide
energy range. The requirement for modern dosime-
ters is to be universal in work in any radiation field.
Such requirements, in fact, do not imply the deter-
mination of absorbed energy, but the restoration of
the primary flux entering the detector. But the natu-
ral requirement could be equalization of the response
to equal energy flows, which actually determine the
degree of impact on the object, in particular on the
biological one. From another hand the transmitted
part of the energy directly depends on the energy of
the primary particle. In the extremely case of com-
plete absorption, the response for any energy flow
will be the same. With a decrease in the thickness of
the detector, part of the energy left in the detector
will decrease more with increasing energy of gamma-
quantum due to a decrease in the cross section for en-
ergy transfer to matter and an increase in the yield of
delta electrons (see Fig.7). Due to this, it is precisely
possible to equalize the response of the detectors in
a wide range of gamma-ray energies with identical
primary flows.
2. EXPOSURE DOSES
The characteristic of the exposure dose is exhaus-
tively expressed by the number of ion pairs in the
air, under normal conditions, corresponding to either
1C/kg or the most affordable 1R, corresponding to
87.3 erg/gram or 2.08 · 109 ion pairs in cm3. For
photon energy of 100 keV , this corresponds to a
flux of 1.97 · 1010 per cm2 or 4.2 · 1011 for energy of
gamma-rays of 10MeV . As a rule, recalculation of
detector readings is traditionally given in units of
the exposure dose, which can create additional dif-
ficulties when working in the counting mode. Fig.1
shows the results of modeling the absorbed energy
in the energy range 30 keV ... 10MeV for air and
silicon. Fig.1 shows good agreement in the energy
range 100 keV ... 2MeV . For low energies, there is
∗Corresponding author E-mail address: dubinavn@kipt.kharkov.ua
ISSN 1562-6016. PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY, 2020, N5(129).
Series: Nuclear Physics Investigations (74), p.105-110.
105
an excess due to large cross sections of the photo-
electric effect in silicon. For high energies, a decrease
in absorption in air is observed due to the escape of
secondary particles from the energy deposited region.
Thus, equalization of the sensitivity of the simulated
detector for energies above 2MeV will lead to the
accumulation of error when using the exposure dose
as standard. In the future, it is supposed to evaluate
this error depending on the thickness of the detector
and filters, leading to additional scattering and a de-
crease in the primary energy of the quantum. When
the detector operates in an energy range of less than
100 keV , it is proposed to apply additional technical
solutions. For the energies above 2MeV , conversion
to exposure dose units leads to the accumulation
of errors associated with the different nature of the
interaction of gamma quanta with silicon and the
formation of ion pairs in air. In particular, the expo-
sure dose may correspond to much higher than these
values at the same flows, the absorption of energy in
silicon.
Fig.1. The dependence of the absorbed energy in
silicon and air on the primary radiation energy
Silicon detectors developed and created at the NSC
KIPT are widely used in nuclear physics experiments
[1, 2] , in medical diagnostic studies, and in the field
of radiation safety [3, 4]. The development of the
detector in a universal sealed enclosure is presented
in [5, 6]
3. ENERGY DEPOSITION
CALCULATION DEPENDS ON GAMMA
QUANTUM PRIMERY ENERGY
According to definition of the absorbed dose, this is
the energy transferred to a unit mass of a substance,
i.e. D = Eabs/m. The absorbed dose is measured
in Gy. 1Gy = 100 rad = 6.24 · 109 MeV/g. The ab-
sorbed dose created by the flux of monochromatic
γ-quanta is determined by the formula:
D = ΦγEγµent , (1)
where Φγ – is the radiation flux density, cm−2; Eγ –
is the energy of the γ-quantum, erg; µen – is the mass
coefficient of energy absorption, cm2/g. The formula
is valid to the extent that the thickness of the detector
is much less than the mean free path of the particle.
Fig.2. Comparison of analytical calculations (1)
with simulation results. The red curve is the calcula-
tion for silicon; the blue curve is the calculation for
air. Green curve – sensitivity modeling in silicon.
Brown – simulation of the exposure dose
Fig.2 shows the distributions of sensitivities in the
energy range of 30 keV...10MeV , calculated by the
formula (1), and also modeled by the computer model
”DozeX”, developed using the Geant.4.9.1 software
module based on taking to account of real geome-
try and secondary particles balance. Calculations
and simulations give good agreement in the energy
range up to 2MeV . The accuracy of determining
the absorbed energy according to (1) is usually the
greater then greater the ratio of primary energy /
thickness of the sensitive layer, but it is in the high
energy range that a significant discrepancy is ob-
served. This is primarily due to the fact that the
greater the energy of primary radiation creates the
correspondingly secondary particles with greater the
energy too. In particular, due to the departure of
delta electrons and high-energy secondary gamma-
rays primary deposited energy are removing from the
volume under study. On the other hand, the scat-
terer with the bigger Z is absorbing more secondary
radiation. In order to analyze the differences in ab-
sorption in different media at maximum energies, the
detector responses to the primary gamma-ray energy
of 10MeV were modeled. Fig.3 presents the results
of modeling by the ”DozeX” program the energy
release (Energy Deposition) of transmitted radiation
with a primary energy of 10MeV .
At high primary radiation energies or correspond-
ingly small target thicknesses, small energy losses of
the order of several keV are most likely (see Fig.3).
Differences of energy losses distributions in silicon
and in air are determined by the difference in Z,
which creates a wider range of energy losses. The
second maximum in the loss distribution is located
in the case of silicon in the range up to 100 keV
(see Fig.3, a). For air, such a maximum is limited
to a range of 40 keV . In the range of more than
60 keV , there is a monotonous decrease in energy
losses, which generally extend to units of MeV for
silicon and almost completely disappears to 1MeV
for air. (see Figs.3, a, b). It can be assumed that
106
this effect determines the behavior of the sensitiv-
ity curves for these media in the high-energy range.
Fig.3. Modeling the response of a silicon detector
with the ”DozeX” program in the form of the
spectral distribution of absorbed energy during the
passage of high-energy gamma-rays through silicon
(a) and air (á)
4. OPTIMIZATION OF DETECTOR
GEOMETRY
Thus, the requirement of matching the detector sen-
sitivity with air (i.e., matching with exposure dose)
is confronted with various types of energy deposition,
in particular at high energies. And if the requirement
for absorption in a gram of dry air is unchanged, then,
by varying the thickness of the detector, a change,
alignment of the sensitivity of the silicon detector is
possible.
In Fig.4 shows the distribution of the dependence
of sensitivity on energy for a silicon detector with
different thicknesses of the sensitive layer. Fig.4
shows that at low energies, the sensitivity weakly
depends on the thickness. As the primary energy of
the gamma quantum increases, the influence of the
detector thickness on the response flatness increases.
So, if for curve corresponding to 500µm, in the en-
ergy range above 100 keV , the sensitivity deviation
is 35% (brown curve), then for a thickness of 300µm
this is already reduced to 25%(orange curve). Thus,
for certain silicon thickness, it is possible to optimize
the correspondence of the detector response to the
exposure dose over wide energy range.
Fig.4. Dependence of sensitive layer thickness on
detector sensitivity, calculated in the direction of
radiation propagation
Reducing the thickness of the detector decreases
the overall efficiency of recording the radiation flux.
To increase (align) the response, it is also possible
to use a substrate with a high reflection scatter-
ing coefficient, especially for secondary radiation.
Fig.5. Detector design influence on the distribution
of dose sensitivity. Red curve – with screen C
10mm, blue — without screen
Fig.5 shows various effects of optimizing the environ-
ment of the detector sensitive layer. The red curve
shows the case when, with the same thickness of the
silicon detector – 300µm, an increase in sensitivity
in the high energy range is possible due to the ad-
dition of a diffuser screen made of light materials of
the CH type. Thus, choosing the appropriate screen
thickness, it is possible to equalize the sensitivity
in a wide energy range from 200 keV to 10MeV .
However, the main problem of the “broadband” de-
tector is the response matching in the range up to
100 keV . As can be seen in Fig.5 (red curve), a
significant decrease in sensitivity occurs in this en-
ergy range due to absorption of the attenuation of
gamma radiation by the screen. Adding a reflec-
tor – the blue curve, increases the sensitivity of the
detectors in the range of 30...300 keV (see Fig.5).
The inverse leveling is to add a substrate under the
sensitive layer, with the corresponding material and
the corresponding thickness. The use of a diffuser
screen increases the sensitivity of thin span detec-
tors in the high energy range, however, due to the
107
attenuation of low energies, it reduces the response
in this area (see Fig.5). To compensate for this
effect, special reflecting scattered are used, which im-
prove the response in the energy range up to 1MeV .
Fig.6. The effect of the substrate on the sensitivity
distribution of a silicon detector. Red curve without
substrate, blue curve – with a substrate
Using a substrate significantly increases the effi-
ciency in the range up to 1MeV (Fig.6), while
the efficiency remains practically unchanged for
higher energies. It should be noted the effect of
the invariance of the response for minimum energies
(Eγ = 30 keV , see Fig.6). While the response forma-
tion in these cases have slightly different mechanisms:
Fig.7. Scattering of Eγ = 60 keV passing through a
filter (C8H8) of 10mm – red curve
The coincidence of the response of the unshielded
and the detector using a screen up to 10mm thick
(Fig.7) explains a weak dependence of the sensitivity
in this energy range on the change in the constructs.
For energy of 60 keV , in particular, this is due to the
absorption peak, in the absence of a screen, to the
redistribution of the primary energy in the range of
Compton scattering.
5. CALCULATION OF AN AMBIENT
DOSE
The spatial distribution of the absorbed energy in
the studied object determines the degree of the effect
of radiation, the most dangerous places, which, as a
rule, correspond to the maximum energy release. To
analyze all these factors, the ambient dose equivalent
of H(d) is introduced, which simulates the real effect
of radiation on the body. The developed ”DozeX”
model allows one to obtain the distribution of ab-
sorbed energy in an extended object of arbitrary
shape. Fig.8 shows the results of modeling the distri-
bution of absorbed energy in silicon 1 cm thickness.
Fig.8. Distribution of absorbed energy in silicon,
depending on the primary energy of the gamma-
quantum
In Fig.8, it can be seen that up to an energy of 2MeV
(blue curve), that the distribution of absorbed energy
is almost uniform, starting with gamma quanta en-
ergy of 100 keV (red curve). For energy of 50 keV
(green curve) at a thickness of 1 cm, the flow attenu-
ates less than twice, but for thicknesses up to 3mm
the spatial uniformity of energy release is preserved.
But if in the energy range 100...500 keV the distri-
bution of absorbed energy over a thickness of up to
1 cm is almost uniform, then already for the energy of
500 keV (brown curve) a certain surface effect begins
to play a role, which is associated with a decrease in
the probability of gamma-quantum interaction with
the medium at the beginning of the target so and with
the transfer of energy by delta electrons by means of
increasing their runs. Nevertheless, up to energy of
2MeV , uniformity of absorption over the thickness
is maintained with a simultaneous decrease in the
probability of the interaction of a gamma quantum
in thin layers (surface effect). Finally, for energies
above 2MeV , the uniformity of energy absorption at
silicon thicknesses of the order of 1 cm is no longer
observed, but a maximum appears in the absorption
distribution. So for energy of 5MeV , it is observed at
a thickness of 8.5mm from the surface, for 10MeV at
a thickness of 9.7mm from the surface. Finally, the
curve for 30 keV shows full absorption in a thickness
of 1 cm, as well as the formation of a ”surface dose”,
which is not typical for high energies. It should also
be noted that the correlation given in Fig.8 with the
distribution of sensitivity in silicon versus the energy
for 1 cm of silicon shown in Fig.1.
6. CONCLUSIONS
An important characteristic of dosimeters is their sen-
sitivity, which in the general case has a direct depen-
108
dence on the primary particle energy; in the case of
spectral distribution, this dependence can be more
complex.
The sensitivity of the dosimeter designed to mea-
sure the exposure dose rate is determined by the
number of pulses (counts) per µR/h. When devel-
oping a new generation of detectors, adaptation to
specific application conditions is necessary. When
used in nuclear power plants, the following factors
must be considered: prompt γ- radiation, γ-radiation
of short-lived fission products, capture γ radiation.
It is well known that during fission of uranium and
plutonium nuclei,7...8MeV is released in the form
of instant gamma radiation and 6...7MeV in the
form of a delayed one. Thus, gamma rays emit-
ted by fission fragments should make a significant
contribution to radiation energy release. When a
thermal neutron is captured by an atomic nucleus
of an absorbing medium, the following reaction oc-
curs AXZ + n →A+1 XZ , the so-called radiation cap-
ture, followed by the emission of a photon. In this
case, the photon energy can reach 11MeV [9] and
must be taken into account in the formation of the
radiation environment. For a water coolant, as a
result of interaction in the active zone of fast neu-
tron fluxes with oxygen nuclei, the 16O(n, p)16N re-
action occurs. In this case, the formed radionu-
clide 16N7 (T1/2 = 7.35 s) decays, emitting gamma-
rays with energies of 6.14MeV (68.8%), 7.11MeV
(4.99%), 8.87MeV (0.062%) [9]. Also, when char-
acterizing and recording the radiation background,
it is necessary to take into account the rescattering
of secondary radiation generated during the capture
of thermal neutrons in hydrogen-containing protec-
tion elements. The developed dosimeter model al-
lows adapting the constructs to the diagnostic re-
quirements of a new generation of dosimeter equip-
ment based on a silicon sensitive element. A possible
direction for realizing the task is to use spectrometer
mode for determining the absorbed energy by inte-
grating the detector readings taking into account the
real spectral distribution of primary flow. The model
allows one to take into account the finite dimensions
of the detector and thus take into account both the
real energy escape by the secondary particles and the
effect of backscattering, which allows one to take into
account the return of reflected radiation to the de-
tection region, transformation of the primary spec-
trum transmitted both through the detector’s main
body and through special transforming screens that
allow increasing detector sensitivity in certain energy
ranges. It is supposed to solve the task of optimizing
the sensitivity of the detector in a wide energy range
by taking into account the real absorption spectrum,
space energy deposition and determining errors when
working in different energy ranges and linking the re-
sponse to the exposure dose.
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ÌÎÄÅËÈÐÎÂÀÍÈÅ ÎÒÊËÈÊÀ ÏËÀÍÀÐÍÎÃÎ ÊÐÅÌÍÈÅÂÎÃÎ ÄÅÒÅÊÒÎÐÀ
ÏÐÈ ÈÇÌÅÐÅÍÈÈ ÌÎÙÍÎÑÒÈ ÝÊÑÏÎÇÈÖÈÎÍÍÎÉ ÄÎÇÛ Â ÄÈÀÏÀÇÎÍÅ
ÝÍÅÐÃÈÉ ÎÒ 5 êýÂ äî 10 ÌýÂ
Â.Í.Äóáèíà, Í.È.Ìàñëîâ, È.Í.Øëÿõîâ
Ðàññìîòðåíû îñíîâíûå ïðåèìóùåñòâà ïðèìåíåíèÿ êðåìíèåâûõ ïîëóïðîâîäíèêîâûõ äåòåêòîðîâ â çàäà-
÷àõ äîçèìåòðèè ïî ñðàâíåíèþ ñ òðàäèöèîííûìè äåòåêòîðàìè. Ïðîàíàëèçèðîâàíû íåäîñòàòêè è ïðåäëî-
æåíû âîçìîæíûå ìåòîäû èõ óñòðàíåíèÿ. Îäèí èç ïðåäëîæåííûõ ìåòîäîâ ïîçâîëÿåò óâåëè÷èòü ýôôåê-
òèâíîñòü ðåãèñòðàöèè ãàììà-êâàíòîâ â äèàïàçîíå ýíåðãèé 0, 1...10 ÌýÂ. Ñôîðìóëèðîâàíû òðåáîâàíèÿ,
íåîáõîäèìûå äëÿ îïòèìèçàöèè êîíñòðóêöèè äåòåêòîðîâ, ðàáîòàþùèõ â øèðîêîì äèàïàçîíå ìîùíîñòåé
äîç è ýíåðãèè ãàììà-èçëó÷åíèÿ, ìåòîäîì êîìïüþòåðíîãî ìîäåëèðîâàíèÿ. Ïðîâåäåííûå ìàòåìàòè÷åñêèå
ðàñ÷åòû è êîìïüþòåðíîå ìîäåëèðîâàíèå îïðåäåëÿþò êîíñòðóêöèþ äîçèìåòðà, ìàòåðèàëû è òîëùèíó
γ-êîíâåðòåðà. Ïðèâîäÿòñÿ ìåõàíèçìû ìîäåëèðîâàíèÿ ïîãëîùåííîé äîçû â âîçäóõå è àìáèåíòíîé äîçû
â êðåìíèåâûõ äåòåêòîðàõ òîëùèíîé îò 300 ìêì, ðàçìåðàìè (5× 5)ìì2 è (1, 8× 1, 8)ìì2, â äèàïàçîíå
ýíåðãèé ïàäàþùåãî γ-èçëó÷åíèÿ îò 5 êý äî 10 ÌýÂ.
ÌÎÄÅËÞÂÀÍÍß ÂIÄÃÓÊÓ ÏËÀÍÀÐÍÎÃÎ ÊÐÅÌÍI�ÂÎÃÎ ÄÅÒÅÊÒÎÐÀ ÏÐÈ
ÂÈÌIÐÞÂÀÍÍI ÏÎÒÓÆÍÎÑÒI ÅÊÑÏÎÇÈÖIÉÍÎ� ÄÎÇÈ Ó ÄIÀÏÀÇÎÍI ÅÍÅÐÃIÉ
ÂIÄ 5 êå äî 10 ÌåÂ
Â.Ì.Äóáèíà, Ì. I.Ìàñëîâ, I.Ì.Øëÿõîâ
Ðîçãëÿíóòî îñíîâíi ïåðåâàãè çàñòîñóâàííÿ êðåìíi¹âèõ íàïiâïðîâiäíèêîâèõ äåòåêòîðiâ ó çàäà÷àõ äî-
çèìåòði¨ â ïîðiâíÿííi ç òðàäèöiéíèìè äåòåêòîðàìè. Ïðîàíàëiçîâàíî íåäîëiêè òà çàïðîïîíîâàíi ìîæ-
ëèâi ìåòîäè ¨õ óñóíåííÿ. Îäèí iç çàïðîïîíîâàíèõ ìåòîäiâ äîçâîëÿ¹ çáiëüøèòè åôåêòèâíiñòü ðå¹ñòðà-
öi¨ ãàììà-êâàíòiâ ó äiàïàçîíi åíåðãié 0, 1...10 ÌåÂ. Ñôîðìóëüîâàíî âèìîãè, íåîáõiäíi äëÿ îïòèìiçà-
öi¨ êîíñòðóêöi¨ äåòåêòîðiâ, ÿêi ïðàöþþòü ó øèðîêîìó äiàïàçîíi ïîòóæíîñòåé äîç i åíåðãi¨ ãàììà-
âèïðîìiíþâàííÿ, ìåòîäîì êîìï'þòåðíîãî ìîäåëþâàííÿ. Ïðîâåäåíi ìàòåìàòè÷íi ðîçðàõóíêè i êîìï'-
þòåðíå ìîäåëþâàííÿ âèçíà÷àþòü êîíñòðóêöiþ äîçèìåòðà, ìàòåðiàëè i òîâùèíó γ-êîíâåðòåðà. Íàâî-
äÿòüñÿ ìåõàíiçìè ìîäåëþâàííÿ ïîãëèíåíî¨ äîçè â ïîâiòði i àìái¹íòíî¨ äîçè â êðåìíi¹âèõ äåòåêòî-
ðàõ òîâùèíîþ âiä 300 ìêì, ðîçìiðàìè (5 × 5)ìì2 i (1, 8 × 1, 8)ìì2, ó äiàïàçîíi åíåðãié ïàäàþ÷îãî
γ-âèïðîìiíþâàííÿ âiä 5 êå äî 10 ÌåÂ.
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