Effect of defects originating under the proton irradiation on the electrophysical and detector properties of CdTe:Cl and CdZnTe

• Datum: 2021
• 1. Verfasser: Kondrik, A.I.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2021
• Schriftenreihe: Вопросы атомной науки и техники
• Schlagworte: Physics of radiation damages and effects in solids
• Online Zugang: http://dspace.nbuv.gov.ua/handle/123456789/194702
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Effect of defects originating under the proton irradiation on the electrophysical and detector properties of CdTe:Cl and CdZnTe / A.I. Kondrik // Problems of Atomic Science and Technology. — 2021. — № 2. — С. 43-50. — Бібліогр.: 24 назв. — англ.

The work is dedicated to studying by computer modeling the mechanisms of the influence of radiation defects, originating under high energy proton irradiation, on the resistivity ρ, lifetime of nonequilibrium electrons τₙ and holes τₚ in CdTe:Cl and Cd₀.₉Zn₀.₁Te, and charge collection efficiency η of room temperature ionizing radiation detectors based on these materials. The effect of recombination at deep levels of radiation defects on the degradation of τₙ, τₚ, and η of detectors based on CdTe:Cl and Cd₀.₉Zn₀.₁Te was studied. Energy levels of radiation defects also substantially effect on compensation degree of semiconductor decreasing ρ. The main factors affecting the abrupt or gradual decrease in the resistivity and charge collection efficiency of these detectors during their bombardment by high-energy protons, leading to complete degradation of their recording ability, were found. The important role of purity and deep donor concentration in initial state of the detector material was indicated.