Impact of γ-irradiation on dielectric and electric properties of TlInS₂ crystals
The effect of γ-irradiation on the relaxor properties of the TlInS₂ compound have been studied. It is established that in this compound the Vogel-Fulcher temperature (Tf) shifts towards the low temperatures, and the Burns temperature (Td) moves towards the high temperatures. As a result, the tempera...
Збережено в:
| Дата: | 2019 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2019
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| Назва видання: | Вопросы атомной науки и техники |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/194933 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Impact of γ-irradiation on dielectric and electric properties of TlInS₂ crystals / R.M. Sardarly, O.A. Samedov, F.T. Salmanov, N.A. Aliyeva // Problems of atomic science and technology. — 2019. — № 2. — С. 30-33. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The effect of γ-irradiation on the relaxor properties of the TlInS₂ compound have been studied. It is established that in this compound the Vogel-Fulcher temperature (Tf) shifts towards the low temperatures, and the Burns temperature (Td) moves towards the high temperatures. As a result, the temperature range for the existence of a relaxor state extends by ∼ 40 K. The presence of hopping conduction is established and the parameters characterizing this mechanism are determined. |
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