IR-spectroscopy and AFM-microscopy of the surface of gamma-irradiated GaS and GaS:Yb layered single crystals

• Дата: 2019
• Автори: Pashayev, A.M., Tagiyev, B.G., Madatov, R.S., Gadzhieva, N.N., Aliev, A.A., Asadov, F.G.
• Формат: Стаття
• Мова: English
• Опубліковано: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2019
• Назва видання: Вопросы атомной науки и техники
• Теми: Physics of radiation damages and effects in solids
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/194934
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: IR-spectroscopy and AFM-microscopy of the surface of gamma-irradiated GaS and GaS:Yb layered single crystals / A.M. Pashayev, B.G. Tagiyev, R.S. Madatov, N.N. Gadzhieva, A.A. Aliev, F.G. Asadov // Problems of atomic science and technology. — 2019. — № 2. — С. 34-38. — Бібліогр.: 11 назв. — англ.

For the first time, information on the surface relief of the layered GaS and doped GaS:Yb single crystals subjected to gamma-irradiation was obtained using atomic force microscopy (AFM) and Fourier-transform infrared spectroscopy (FTIR). It was found that GaS is characterized by a non-uniform distribution of irregularities with different heights and periodicities, and when doping crystals with Yb atoms, the distribution of irregularities becomes more orderly, the height and periodicity of irregularities decreases. In the FTIR spectra, changes in the reflection coefficients of the surface of GaS and GaS:Yb single crystals are observed as a function of the gammairradiation dose (Фγ = 30…200 krad), and on the basis of spectroscopic and microscopic changes, it was found that doped single crystals are the most radiation-resistant.