Properties of a charge in the nanoheterosystems with quantum wells and barriers

• Дата: 2010
• Автори: Boichuk, V.I., Bilynskyi, I.V., Shakleina, I.O., Holskyi, V.B.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики конденсованих систем НАН України 2010
• Назва видання: Condensed Matter Physics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/32045
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Properties of a charge in the nanoheterosystems with quantum wells and barriers / V.I. Boichuk, I.V. Bilynskyi, I.O. Shakleina, V.B. Holskyi // Condensed Matter Physics. — 2010. — Т. 13, № 1. — С. 13701: 1-11. — Бібліогр.: 24 назв. — англ.

In the paper a quasi-one-dimensional three-layer nanowire (NW) with an intermediate layer at the separation boundaries is described by the Kronig-Penney model with δ-function potentials. The distance between the last or supreme atoms of the intermediate layer is a parameter of the problem and ranges from zero to two lattice parameters of crystals. A precise solution is obtained for the quantum-mechanical reflection coefficient R which makes it possible to determine the dependence of the factor on a wave vector, widths of an intermediate layer and a monolayer of the nanoheterostructure. The specific calculations are performed for the GaAs/AlAs/GaAs and AlAs/GaAs/AlAS nanowires. The comparison of the reflection coefficients in the envelope-function approximation and in the effective mass method is performed at small values of a wave vector. It is shown that similar results can be received using the refined procedure, originally proposed by Harrison, with appropriately taken parameters. For the cosinusoidal dependence of the energy on a wave vector which arises in the Kronig-Penney model within the framework of the S-matrix scattering method, we determined the binding states energy for a AlAs/GaAs/AlAs quantum well wire.