Особливостi струмових нестабiльностей фосфiдо-галiєвих свiтлодiодiв, опромiнених нейтронами

Особливостi струмових нестабiльностей фосфiдо-галiєвих свiтлодiодiв, опромiнених нейтронами

GaP LEDs with atypical current characteristics are studied by optical and electrical methods. The thin structure of an S-shaped NDR region which appears in the current-voltage characteristics at low temperatures (100–77 K) after irradiation has become more expressive and possesses the higher oscil...

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Bibliographic Details
Date:2008
Main Authors: Конорева, О.В., Ластовецький, В.Ф., Опилат, В.Я., Гришин, Ю. Г., Петренко, I.В., Пiнковська, М.Б., Тартачник, В.П.
Format: Article
Language:Ukrainian
Published: Видавничий дім "Академперіодика" НАН України 2008
Subjects:
Фізика
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/4125
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Особливостi струмових нестабiльностей фосфiдо-галiєвих свiтлодiодiв, опромiнених нейтронами / О.В. Конорева, В.Ф. Ластовецький, П. Г. Литовченко, В.Я. Опилат, Ю. Г. Гришин, I.В. Петренко, М.Б. Пiнковська, В.П. Тартачник // Доп. НАН України. — 2008. — № 3. — С. 71-76. — Бібліогр.: 9 назв. — укp.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:GaP LEDs with atypical current characteristics are studied by optical and electrical methods. The thin structure of an S-shaped NDR region which appears in the current-voltage characteristics at low temperatures (100–77 K) after irradiation has become more expressive and possesses the higher oscillation amplitude. The high destructive influence of fast neutrons on the emitting recombination is caused by two factors: the electrical fields of radiation defects and the capture of charged carriers by their levels.

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