Акустойонні та акустоелектронні технології
The new approach to problem solution of semi-conductor material control within the frame of silicon technology of KMON-devices manufacturing is presented as well as to active acoustic-electron devices characteristic control problem and creation of new generation gauges based on these devices. The...
Збережено в:
Дата: | 2007 |
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Автори: | , , , |
Формат: | Стаття |
Мова: | Ukrainian |
Опубліковано: |
Видавничий дім "Академперіодика" НАН України
2007
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Назва видання: | №5 |
Теми: | |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/523 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Акустоіонні та акустоелектронні технології / В. Мачулін, Я. Лепіх, Я. Оліх, Б. Романюк // Вісн. НАН України. — 2007. — N 5. — С. 3-8. — Бібліогр.: 11 назв. — укp. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of UkraineРезюме: | The new approach to problem solution of semi-conductor material control within the frame of silicon technology of KMON-devices manufacturing is presented as well as
to active acoustic-electron devices characteristic control problem and creation of new generation gauges based on
these devices. The approach is to use ultrasonic treatment of semi-conduct plates during implantation (acousticion
technologies) and to investigate physical phenomena that occur during acoustic waves spread in anisotropic piezoelectrics (acoustic-electron technologies). Ef fectiveness and universality of acoustic-ion and acousticelectron methods which priorities are proved by patents
for invention can play an important role for
instrument-making industry, information technologies, machine building, as well as become the basis of such advance scientific and engineering trends as thin film
technology, nanoelectronics, functional microelectronics, optoelectronics. |
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