Atomistic models for R1–xPrxBa2Cu3O7–δ (R = Y and lanthanides) and related oxides

• Дата: 2009
• Автори: Chroneos, A.I., Goulatis, I.L., Vovk, R.V., Zavgorodniy, A.A., Obolenskii, M.A., Petrenko, A.G., Samoilov, A.V.
• Формат: Стаття
• Мова: English
• Опубліковано: Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України 2009
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/5990
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Atomistic models for R1–xPrxBa2Cu3O7–δ (R = Y and lanthanides) and related oxides / A.I. Chroneos, I.L. Goulatis, R.V. Vovk, A.A. Zavgorodniy, M.A. Obolenskii, A.G. Petrenko, A.V. Samoilov // Физика и техника высоких давлений. — 2009. — Т. 19, № 2. — С. 7-13. — Бібліогр.: 17 назв. — англ.

We report the results of defect structures studies of silicon implanted at different temperatures with Mn ions (Si:Mn) and of GaMnAs layers, next annealed under ambient and high pressures. An influence of annealing conditions on structural properties of Si:Mn and GaMnAs layers was investigated. It has been confirmed that annealing of the Si:Mn samples after implantation results in crystallization of silicon inside the buried postimplanted layer, as well as in the formation of ferromagnetic Mn4Si7 precipitates. A change of strain in the GaMnAs layer, from the compressive to the tensile one, related to a creation of nanoclustered MnAs, was found to be dependent on processing conditions and primary existing structural defects, while independent of the Mn concentration. An influence of primary defects on the structural transformations of the GaMnAs layer is discussed.