Microplasticity of subsurface layers of diamond-like semiconductors under microindentation
Experimental confirmations of the influence of the free surface of a chip on processes of plastic deforming under indentation such as a decrease of the effective activation energy of dislocations with reduction of load on the indenter and a considerable decrease of temperature of the beginning of po...
Збережено в:
| Дата: | 2005 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України
2005
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| Назва видання: | Физика и техника высоких давлений |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/70108 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Microplasticity of subsurface layers of diamond-like semiconductors under microindentation / V.A. Nadtochiy, V.P. Alyokhin, M.M. Golodenko // Физика и техника высоких давлений. — 2005. — Т. 15, № 1. — С. 44-49. — Бібліогр.: 20 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Experimental confirmations of the influence of the free surface of a chip on processes of plastic deforming under indentation such as a decrease of the effective activation energy of dislocations with reduction of load on the indenter and a considerable decrease of temperature of the beginning of polygonization processes, when annealing microhardness rosettes in the field of small impresses, are obtained. A possibility of dislocation motion by means of creeping at temperatures lower than brittleness threshold temperature was shown on the example of GaAs. |
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