Microplasticity of subsurface layers of diamond-like semiconductors under microindentation

Experimental confirmations of the influence of the free surface of a chip on processes of plastic deforming under indentation such as a decrease of the effective activation energy of dislocations with reduction of load on the indenter and a considerable decrease of temperature of the beginning of po...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2005
Автори: Nadtochiy, V.A., Alyokhin, V.P., Golodenko, M.M.
Формат: Стаття
Мова:English
Опубліковано: Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України 2005
Назва видання:Физика и техника высоких давлений
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/70108
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Microplasticity of subsurface layers of diamond-like semiconductors under microindentation / V.A. Nadtochiy, V.P. Alyokhin, M.M. Golodenko // Физика и техника высоких давлений. — 2005. — Т. 15, № 1. — С. 44-49. — Бібліогр.: 20 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-70108
record_format dspace
spelling irk-123456789-701082014-10-29T03:01:39Z Microplasticity of subsurface layers of diamond-like semiconductors under microindentation Nadtochiy, V.A. Alyokhin, V.P. Golodenko, M.M. Experimental confirmations of the influence of the free surface of a chip on processes of plastic deforming under indentation such as a decrease of the effective activation energy of dislocations with reduction of load on the indenter and a considerable decrease of temperature of the beginning of polygonization processes, when annealing microhardness rosettes in the field of small impresses, are obtained. A possibility of dislocation motion by means of creeping at temperatures lower than brittleness threshold temperature was shown on the example of GaAs. 2005 Article Microplasticity of subsurface layers of diamond-like semiconductors under microindentation / V.A. Nadtochiy, V.P. Alyokhin, M.M. Golodenko // Физика и техника высоких давлений. — 2005. — Т. 15, № 1. — С. 44-49. — Бібліогр.: 20 назв. — англ. 0868-5924 PACS: 61.72.Ff http://dspace.nbuv.gov.ua/handle/123456789/70108 en Физика и техника высоких давлений Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Experimental confirmations of the influence of the free surface of a chip on processes of plastic deforming under indentation such as a decrease of the effective activation energy of dislocations with reduction of load on the indenter and a considerable decrease of temperature of the beginning of polygonization processes, when annealing microhardness rosettes in the field of small impresses, are obtained. A possibility of dislocation motion by means of creeping at temperatures lower than brittleness threshold temperature was shown on the example of GaAs.
format Article
author Nadtochiy, V.A.
Alyokhin, V.P.
Golodenko, M.M.
spellingShingle Nadtochiy, V.A.
Alyokhin, V.P.
Golodenko, M.M.
Microplasticity of subsurface layers of diamond-like semiconductors under microindentation
Физика и техника высоких давлений
author_facet Nadtochiy, V.A.
Alyokhin, V.P.
Golodenko, M.M.
author_sort Nadtochiy, V.A.
title Microplasticity of subsurface layers of diamond-like semiconductors under microindentation
title_short Microplasticity of subsurface layers of diamond-like semiconductors under microindentation
title_full Microplasticity of subsurface layers of diamond-like semiconductors under microindentation
title_fullStr Microplasticity of subsurface layers of diamond-like semiconductors under microindentation
title_full_unstemmed Microplasticity of subsurface layers of diamond-like semiconductors under microindentation
title_sort microplasticity of subsurface layers of diamond-like semiconductors under microindentation
publisher Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України
publishDate 2005
url http://dspace.nbuv.gov.ua/handle/123456789/70108
citation_txt Microplasticity of subsurface layers of diamond-like semiconductors under microindentation / V.A. Nadtochiy, V.P. Alyokhin, M.M. Golodenko // Физика и техника высоких давлений. — 2005. — Т. 15, № 1. — С. 44-49. — Бібліогр.: 20 назв. — англ.
series Физика и техника высоких давлений
work_keys_str_mv AT nadtochiyva microplasticityofsubsurfacelayersofdiamondlikesemiconductorsundermicroindentation
AT alyokhinvp microplasticityofsubsurfacelayersofdiamondlikesemiconductorsundermicroindentation
AT golodenkomm microplasticityofsubsurfacelayersofdiamondlikesemiconductorsundermicroindentation
first_indexed 2023-10-18T18:57:48Z
last_indexed 2023-10-18T18:57:48Z
_version_ 1796145633216692224