Microplasticity of subsurface layers of diamond-like semiconductors under microindentation
Experimental confirmations of the influence of the free surface of a chip on processes of plastic deforming under indentation such as a decrease of the effective activation energy of dislocations with reduction of load on the indenter and a considerable decrease of temperature of the beginning of po...
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Дата: | 2005 |
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Автори: | , , |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України
2005
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Назва видання: | Физика и техника высоких давлений |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/70108 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Microplasticity of subsurface layers of diamond-like semiconductors under microindentation / V.A. Nadtochiy, V.P. Alyokhin, M.M. Golodenko // Физика и техника высоких давлений. — 2005. — Т. 15, № 1. — С. 44-49. — Бібліогр.: 20 назв. — англ. |
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irk-123456789-701082014-10-29T03:01:39Z Microplasticity of subsurface layers of diamond-like semiconductors under microindentation Nadtochiy, V.A. Alyokhin, V.P. Golodenko, M.M. Experimental confirmations of the influence of the free surface of a chip on processes of plastic deforming under indentation such as a decrease of the effective activation energy of dislocations with reduction of load on the indenter and a considerable decrease of temperature of the beginning of polygonization processes, when annealing microhardness rosettes in the field of small impresses, are obtained. A possibility of dislocation motion by means of creeping at temperatures lower than brittleness threshold temperature was shown on the example of GaAs. 2005 Article Microplasticity of subsurface layers of diamond-like semiconductors under microindentation / V.A. Nadtochiy, V.P. Alyokhin, M.M. Golodenko // Физика и техника высоких давлений. — 2005. — Т. 15, № 1. — С. 44-49. — Бібліогр.: 20 назв. — англ. 0868-5924 PACS: 61.72.Ff http://dspace.nbuv.gov.ua/handle/123456789/70108 en Физика и техника высоких давлений Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
description |
Experimental confirmations of the influence of the free surface of a chip on processes of plastic deforming under indentation such as a decrease of the effective activation energy of dislocations with reduction of load on the indenter and a considerable decrease of temperature of the beginning of polygonization processes, when annealing microhardness rosettes in the field of small impresses, are obtained. A possibility of dislocation motion by means of creeping at temperatures lower than brittleness threshold temperature was shown on the example of GaAs. |
format |
Article |
author |
Nadtochiy, V.A. Alyokhin, V.P. Golodenko, M.M. |
spellingShingle |
Nadtochiy, V.A. Alyokhin, V.P. Golodenko, M.M. Microplasticity of subsurface layers of diamond-like semiconductors under microindentation Физика и техника высоких давлений |
author_facet |
Nadtochiy, V.A. Alyokhin, V.P. Golodenko, M.M. |
author_sort |
Nadtochiy, V.A. |
title |
Microplasticity of subsurface layers of diamond-like semiconductors under microindentation |
title_short |
Microplasticity of subsurface layers of diamond-like semiconductors under microindentation |
title_full |
Microplasticity of subsurface layers of diamond-like semiconductors under microindentation |
title_fullStr |
Microplasticity of subsurface layers of diamond-like semiconductors under microindentation |
title_full_unstemmed |
Microplasticity of subsurface layers of diamond-like semiconductors under microindentation |
title_sort |
microplasticity of subsurface layers of diamond-like semiconductors under microindentation |
publisher |
Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України |
publishDate |
2005 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/70108 |
citation_txt |
Microplasticity of subsurface layers of diamond-like semiconductors under microindentation / V.A. Nadtochiy, V.P. Alyokhin, M.M. Golodenko // Физика и техника высоких давлений. — 2005. — Т. 15, № 1. — С. 44-49. — Бібліогр.: 20 назв. — англ. |
series |
Физика и техника высоких давлений |
work_keys_str_mv |
AT nadtochiyva microplasticityofsubsurfacelayersofdiamondlikesemiconductorsundermicroindentation AT alyokhinvp microplasticityofsubsurfacelayersofdiamondlikesemiconductorsundermicroindentation AT golodenkomm microplasticityofsubsurfacelayersofdiamondlikesemiconductorsundermicroindentation |
first_indexed |
2023-10-18T18:57:48Z |
last_indexed |
2023-10-18T18:57:48Z |
_version_ |
1796145633216692224 |