Вплив домішок на електрон-діркові спектри сферичної квантової точки

• Main Authors: Бойчук, В., Білинський, І., Лешко, Р.
• Format: Article
• Language: Ukrainian
• Published: Західний науковий центр НАН України і МОН України 2011
• Series: Праці наукового товариства ім. Шевченка
• Subjects: Міжнародна школа-конференція "Актуальні проблеми фізики напівпровідників"
• Online Access: http://dspace.nbuv.gov.ua/handle/123456789/75281

The effect of the positively and negatively charged impurities on the spectrum of electron- hole pair was studied. The energy was calculated by the linear variational method on the basis of wave functions which describe the complex es such as charged ion and quasiparticle. The obtained results show that the presence of an ion of the impurity leads to a decrease of the electron hole energy in comparison with the case without the impurity. It is established that the negatively charged ion of the impurity decreases the energy more strongly than the positively charged ion. For the quantum dot heterosystem Si /SiO2 on the basis of the analysis of the average distances between particles it is defined that the presence of an ion of the impurity hinders the creation of a bound exciton state.