2025-02-21T08:33:30-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-75363%22&qt=morelikethis&rows=5
2025-02-21T08:33:30-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-75363%22&qt=morelikethis&rows=5
2025-02-21T08:33:30-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-21T08:33:30-05:00 DEBUG: Deserialized SOLR response
Моделювання вольт-амперних характеристик структури метал-i-n⁺ із самоорганізованими нанокластерами

Моделювання вольт-амперних характеристик структури метал-i-n⁺ із самоорганізованими нанокластерами

The computational method of current voltage characteristics of metal undoped semiconductor (i) - doped semiconductor substrate (n)+ structure with clusters of defects is described. The offered method permits to take into account the elastic deformations near the defect deformation structures and the...

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Bibliographic Details
Main Authors: Пелещак, Р., Данньків, О., Кузик, О.
Format: Article
Language:Ukrainian
Published: Західний науковий центр НАН України і МОН України 2011
Series:Праці наукового товариства ім. Шевченка
Subjects:
Міжнародна школа-конференція "Актуальні проблеми фізики напівпровідників"
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/75363
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Summary:The computational method of current voltage characteristics of metal undoped semiconductor (i) - doped semiconductor substrate (n)+ structure with clusters of defects is described. The offered method permits to take into account the elastic deformations near the defect deformation structures and the deformations caused by a mismatch of crystal lattices of contacting semiconductor materials.

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