Linear polarization of photons produced by the electrons moving along the crystallographic plane in a silicon crystal

• Дата: 2001
• Автори: Denyak, V.V., Khvastunov, V.M., Likhachev, V.P., Paschuk, S.A., Schelin, H.R.
• Формат: Стаття
• Мова: English
• Опубліковано: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2001
• Назва видання: Вопросы атомной науки и техники
• Теми: Nuclear reactions
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/78448
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Linear polarization of photons produced by the electrons moving along the crystallographic plane in a silicon crystal / V.V. Denyak, V.M. Khvastunov, V.P. Likhachev, S.A. Paschuk, H.R. Schelin // Вопросы атомной науки и техники. — 2001. — № 1. — С. 60-62. — Бібліогр.: 8 назв. — англ.

We present the results of the polarization and intensity measurements versus photon energy Eg=5-35 MeV for the photon beam produced by the electrons with the energies 1.2 and 1.5 GeV moving in the silicon crystal 500 and 290 mm thick along the (110) plane. The comparison with results of another research group and theoretical calculation indicates the qualitative agreement. The correlation in the shape of the radiation intensity spectrum and its polarization energy dependence is observed.