Electric barrier formation in kind of connected dip and hump of electric potential near ECR point
The self-consistent formation, observed in experiments, of the solitary barrier for plasma electrons and ions has been analytically described.
Збережено в:
| Дата: | 2002 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2002
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| Назва видання: | Вопросы атомной науки и техники |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/78923 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electric barrier formation in kind of connected dip and hump of electric potential near ECR point / S.V. Barchuk, V.I. Lapshin, V.I. Maslov, I.N. Onishchenko, V.N. Tretyakov // Вопросы атомной науки и техники. — 2002. — № 5. — С. 98-100. — Бібліогр.: 1 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-78923 |
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dspace |
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irk-123456789-789232015-03-24T03:01:49Z Electric barrier formation in kind of connected dip and hump of electric potential near ECR point Barchuk, S.V. Lapshin, V.I. Maslov, V.I. Onishchenko, I.N. Tretyakov, V.N. Plasma electronics The self-consistent formation, observed in experiments, of the solitary barrier for plasma electrons and ions has been analytically described. 2002 Article Electric barrier formation in kind of connected dip and hump of electric potential near ECR point / S.V. Barchuk, V.I. Lapshin, V.I. Maslov, I.N. Onishchenko, V.N. Tretyakov // Вопросы атомной науки и техники. — 2002. — № 5. — С. 98-100. — Бібліогр.: 1 назв. — англ. 1562-6016 PACS: 52.25.-b http://dspace.nbuv.gov.ua/handle/123456789/78923 en Вопросы атомной науки и техники Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Plasma electronics Plasma electronics |
| spellingShingle |
Plasma electronics Plasma electronics Barchuk, S.V. Lapshin, V.I. Maslov, V.I. Onishchenko, I.N. Tretyakov, V.N. Electric barrier formation in kind of connected dip and hump of electric potential near ECR point Вопросы атомной науки и техники |
| description |
The self-consistent formation, observed in experiments, of the solitary barrier for plasma electrons and ions has been analytically described. |
| format |
Article |
| author |
Barchuk, S.V. Lapshin, V.I. Maslov, V.I. Onishchenko, I.N. Tretyakov, V.N. |
| author_facet |
Barchuk, S.V. Lapshin, V.I. Maslov, V.I. Onishchenko, I.N. Tretyakov, V.N. |
| author_sort |
Barchuk, S.V. |
| title |
Electric barrier formation in kind of connected dip and hump of electric potential near ECR point |
| title_short |
Electric barrier formation in kind of connected dip and hump of electric potential near ECR point |
| title_full |
Electric barrier formation in kind of connected dip and hump of electric potential near ECR point |
| title_fullStr |
Electric barrier formation in kind of connected dip and hump of electric potential near ECR point |
| title_full_unstemmed |
Electric barrier formation in kind of connected dip and hump of electric potential near ECR point |
| title_sort |
electric barrier formation in kind of connected dip and hump of electric potential near ecr point |
| publisher |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| publishDate |
2002 |
| topic_facet |
Plasma electronics |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/78923 |
| citation_txt |
Electric barrier formation in kind of connected dip and hump of electric potential near ECR point / S.V. Barchuk, V.I. Lapshin, V.I. Maslov, I.N. Onishchenko, V.N. Tretyakov // Вопросы атомной науки и техники. — 2002. — № 5. — С. 98-100. — Бібліогр.: 1 назв. — англ. |
| series |
Вопросы атомной науки и техники |
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