The formation of near anode double layer in highcurrent plasma diode of low pressure

A plasma electron source on the basis of a pulse plasma diode of low pressure with an extended interelectrode gap has been experimentally investigated. The basis of a plasma electron source serves a gas discharge of a new type - selfmaintained beam-plasma discharge, which distinctive feature is the...

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Дата:2002
Автори: Tseluyko, A.F., Zinov’ev, D.V., Borisko, V.N., Tseluyko, V.A., Drobishevskaya, A.A.
Формат: Стаття
Мова:English
Опубліковано: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2002
Назва видання:Вопросы атомной науки и техники
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Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/79277
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:The formation of near anode double layer in highcurrent plasma diode of low pressure / A.F. Tseluyko, D.V. Zinov’ev, V.N. Borisko, V.A. Tseluyko, A.A. Drobishevskaya // Вопросы атомной науки и техники. — 2002. — № 5. — С. 127-129. — Бібліогр.: 6 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-79277
record_format dspace
spelling irk-123456789-792772016-04-14T11:05:42Z The formation of near anode double layer in highcurrent plasma diode of low pressure Tseluyko, A.F. Zinov’ev, D.V. Borisko, V.N. Tseluyko, V.A. Drobishevskaya, A.A. Low temperature plasma and plasma technologies A plasma electron source on the basis of a pulse plasma diode of low pressure with an extended interelectrode gap has been experimentally investigated. The basis of a plasma electron source serves a gas discharge of a new type - selfmaintained beam-plasma discharge, which distinctive feature is the forming of a double electrical layer of a space charge in a discharge gap and generation of an intensive electron beam. The exterior parameters were determined, at which formation of a double layer and the acceleration of an electron beam in such discharge occurs immediately at working area of the anode. The plasma electron source is calculated on generation of an electron beam with the energy 〖10〗^4…〖10〗^5 eV at the current 2…3 kA, current density 200…300 A/cm 2 , pulse length 1…10 μs and efficiency of conversion of an exterior electric field energy into an electron beam energy up to 80%. 2002 Article The formation of near anode double layer in highcurrent plasma diode of low pressure / A.F. Tseluyko, D.V. Zinov’ev, V.N. Borisko, V.A. Tseluyko, A.A. Drobishevskaya // Вопросы атомной науки и техники. — 2002. — № 5. — С. 127-129. — Бібліогр.: 6 назв. — англ. 1562-6016 PACS: 52.40.Hf http://dspace.nbuv.gov.ua/handle/123456789/79277 en Вопросы атомной науки и техники Національний науковий центр «Харківський фізико-технічний інститут» НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
topic Low temperature plasma and plasma technologies
Low temperature plasma and plasma technologies
spellingShingle Low temperature plasma and plasma technologies
Low temperature plasma and plasma technologies
Tseluyko, A.F.
Zinov’ev, D.V.
Borisko, V.N.
Tseluyko, V.A.
Drobishevskaya, A.A.
The formation of near anode double layer in highcurrent plasma diode of low pressure
Вопросы атомной науки и техники
description A plasma electron source on the basis of a pulse plasma diode of low pressure with an extended interelectrode gap has been experimentally investigated. The basis of a plasma electron source serves a gas discharge of a new type - selfmaintained beam-plasma discharge, which distinctive feature is the forming of a double electrical layer of a space charge in a discharge gap and generation of an intensive electron beam. The exterior parameters were determined, at which formation of a double layer and the acceleration of an electron beam in such discharge occurs immediately at working area of the anode. The plasma electron source is calculated on generation of an electron beam with the energy 〖10〗^4…〖10〗^5 eV at the current 2…3 kA, current density 200…300 A/cm 2 , pulse length 1…10 μs and efficiency of conversion of an exterior electric field energy into an electron beam energy up to 80%.
format Article
author Tseluyko, A.F.
Zinov’ev, D.V.
Borisko, V.N.
Tseluyko, V.A.
Drobishevskaya, A.A.
author_facet Tseluyko, A.F.
Zinov’ev, D.V.
Borisko, V.N.
Tseluyko, V.A.
Drobishevskaya, A.A.
author_sort Tseluyko, A.F.
title The formation of near anode double layer in highcurrent plasma diode of low pressure
title_short The formation of near anode double layer in highcurrent plasma diode of low pressure
title_full The formation of near anode double layer in highcurrent plasma diode of low pressure
title_fullStr The formation of near anode double layer in highcurrent plasma diode of low pressure
title_full_unstemmed The formation of near anode double layer in highcurrent plasma diode of low pressure
title_sort formation of near anode double layer in highcurrent plasma diode of low pressure
publisher Національний науковий центр «Харківський фізико-технічний інститут» НАН України
publishDate 2002
topic_facet Low temperature plasma and plasma technologies
url http://dspace.nbuv.gov.ua/handle/123456789/79277
citation_txt The formation of near anode double layer in highcurrent plasma diode of low pressure / A.F. Tseluyko, D.V. Zinov’ev, V.N. Borisko, V.A. Tseluyko, A.A. Drobishevskaya // Вопросы атомной науки и техники. — 2002. — № 5. — С. 127-129. — Бібліогр.: 6 назв. — англ.
series Вопросы атомной науки и техники
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first_indexed 2023-10-18T19:18:20Z
last_indexed 2023-10-18T19:18:20Z
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