Features of angular distributions of 1 GeV electrons scattered by thin silicon monocrystal

Features of angular distributions of 1 GeV electrons scattered by thin silicon monocrystal

The result of theoretical and experimental investigations of angular distribution structure of 1 GeV electrons scattered by silicon crystal of 10 mm thickness are presented. The electron beam was falling on the crystal under different angles (from zero to the critical channeling angle) in respect to...

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Збережено в:
Бібліографічні деталі
Дата:2001
Автори: Fomin, S.P., Shcherbak, S.F., Kasilov, V.I., Lapin, N.I., Shul'ga, N.F.
Формат: Стаття
Мова:English
Опубліковано: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2001
Назва видання:Вопросы атомной науки и техники
Теми:
Electrodynamics of high energies in matter and strong fields
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/79420
Теги: Додати тег
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Features of angular distributions of 1 GeV electrons scattered by thin silicon monocrystal / S.P. Fomin, S.F. Shcherbak, V.I. Kasilov, N.I. Lapin, N.F. Shul'ga // Вопросы атомной науки и техники. — 2001. — № 6. — С. 138-143. — Бібліогр.: 8 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-79420
record_format dspace
spelling irk-123456789-794202015-04-02T03:01:56Z Features of angular distributions of 1 GeV electrons scattered by thin silicon monocrystal Fomin, S.P. Shcherbak, S.F. Kasilov, V.I. Lapin, N.I. Shul'ga, N.F. Electrodynamics of high energies in matter and strong fields The result of theoretical and experimental investigations of angular distribution structure of 1 GeV electrons scattered by silicon crystal of 10 mm thickness are presented. The electron beam was falling on the crystal under different angles (from zero to the critical channeling angle) in respect to the crystal axis <111>. The analysis of the experimental data was carried out with the help of computer simulation of electron beam passage through the crystal on the basis of binary collision model. It is shown, that the existence of several maxima in the angular distributions of scattered electrons is stipulated by contributions of different fractions of electron beam in crystal, namely: the channeled and the above-barrier. The combined technique (simulation-experiment) of investigation of elastic scattering makes it possible to obtain important quantitative information about relativistic electron beam dynamics in aligned crystals. 2001 Article Features of angular distributions of 1 GeV electrons scattered by thin silicon monocrystal / S.P. Fomin, S.F. Shcherbak, V.I. Kasilov, N.I. Lapin, N.F. Shul'ga // Вопросы атомной науки и техники. — 2001. — № 6. — С. 138-143. — Бібліогр.: 8 назв. — англ. 1562-6016 PACS: 61.85; 41.75.H; 34.80.P http://dspace.nbuv.gov.ua/handle/123456789/79420 en Вопросы атомной науки и техники Національний науковий центр «Харківський фізико-технічний інститут» НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
topic Electrodynamics of high energies in matter and strong fields
Electrodynamics of high energies in matter and strong fields
spellingShingle Electrodynamics of high energies in matter and strong fields
Electrodynamics of high energies in matter and strong fields
Fomin, S.P.
Shcherbak, S.F.
Kasilov, V.I.
Lapin, N.I.
Shul'ga, N.F.
Features of angular distributions of 1 GeV electrons scattered by thin silicon monocrystal
Вопросы атомной науки и техники
description The result of theoretical and experimental investigations of angular distribution structure of 1 GeV electrons scattered by silicon crystal of 10 mm thickness are presented. The electron beam was falling on the crystal under different angles (from zero to the critical channeling angle) in respect to the crystal axis <111>. The analysis of the experimental data was carried out with the help of computer simulation of electron beam passage through the crystal on the basis of binary collision model. It is shown, that the existence of several maxima in the angular distributions of scattered electrons is stipulated by contributions of different fractions of electron beam in crystal, namely: the channeled and the above-barrier. The combined technique (simulation-experiment) of investigation of elastic scattering makes it possible to obtain important quantitative information about relativistic electron beam dynamics in aligned crystals.
format Article
author Fomin, S.P.
Shcherbak, S.F.
Kasilov, V.I.
Lapin, N.I.
Shul'ga, N.F.
author_facet Fomin, S.P.
Shcherbak, S.F.
Kasilov, V.I.
Lapin, N.I.
Shul'ga, N.F.
author_sort Fomin, S.P.
title Features of angular distributions of 1 GeV electrons scattered by thin silicon monocrystal
title_short Features of angular distributions of 1 GeV electrons scattered by thin silicon monocrystal
title_full Features of angular distributions of 1 GeV electrons scattered by thin silicon monocrystal
title_fullStr Features of angular distributions of 1 GeV electrons scattered by thin silicon monocrystal
title_full_unstemmed Features of angular distributions of 1 GeV electrons scattered by thin silicon monocrystal
title_sort features of angular distributions of 1 gev electrons scattered by thin silicon monocrystal
publisher Національний науковий центр «Харківський фізико-технічний інститут» НАН України
publishDate 2001
topic_facet Electrodynamics of high energies in matter and strong fields
url http://dspace.nbuv.gov.ua/handle/123456789/79420
citation_txt Features of angular distributions of 1 GeV electrons scattered by thin silicon monocrystal / S.P. Fomin, S.F. Shcherbak, V.I. Kasilov, N.I. Lapin, N.F. Shul'ga // Вопросы атомной науки и техники. — 2001. — № 6. — С. 138-143. — Бібліогр.: 8 назв. — англ.
series Вопросы атомной науки и техники
work_keys_str_mv AT fominsp featuresofangulardistributionsof1gevelectronsscatteredbythinsiliconmonocrystal
AT shcherbaksf featuresofangulardistributionsof1gevelectronsscatteredbythinsiliconmonocrystal
AT kasilovvi featuresofangulardistributionsof1gevelectronsscatteredbythinsiliconmonocrystal
AT lapinni featuresofangulardistributionsof1gevelectronsscatteredbythinsiliconmonocrystal
AT shulganf featuresofangulardistributionsof1gevelectronsscatteredbythinsiliconmonocrystal
first_indexed 2023-10-18T19:18:39Z
last_indexed 2023-10-18T19:18:39Z
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