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An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties

An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties

In the paper the processes of accumulation of radiation defects, formed by fragments of ²³⁸U nucleus fission, for forming of amorphous phases in the bulk of single-crystal silicon and the influence of the temperature annealing of defects on the properties of disordered structures are investigated....

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Bibliographic Details
Main Authors: Dovbnya, A.N., Yefimov, V.P., Pugachev, G.D., Dyomin, V.S., Dovbnya, N.A., Gordienko, J.E., Borodin, B.G., Babychenko, S.V., Semenets, T.A.
Format: Article
Language:English
Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2006
Series:Вопросы атомной науки и техники
Subjects:
Применение ускорителей в радиационных технологиях
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/79885
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Summary:In the paper the processes of accumulation of radiation defects, formed by fragments of ²³⁸U nucleus fission, for forming of amorphous phases in the bulk of single-crystal silicon and the influence of the temperature annealing of defects on the properties of disordered structures are investigated.

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