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An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties

An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties

In the paper the processes of accumulation of radiation defects, formed by fragments of ²³⁸U nucleus fission, for forming of amorphous phases in the bulk of single-crystal silicon and the influence of the temperature annealing of defects on the properties of disordered structures are investigated....

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Main Authors: Dovbnya, A.N., Yefimov, V.P., Pugachev, G.D., Dyomin, V.S., Dovbnya, N.A., Gordienko, J.E., Borodin, B.G., Babychenko, S.V., Semenets, T.A.
Format: Article
Language:English
Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2006
Series:Вопросы атомной науки и техники
Subjects:
Применение ускорителей в радиационных технологиях
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/79885
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spelling irk-123456789-798852015-04-07T03:02:06Z An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties Dovbnya, A.N. Yefimov, V.P. Pugachev, G.D. Dyomin, V.S. Dovbnya, N.A. Gordienko, J.E. Borodin, B.G. Babychenko, S.V. Semenets, T.A. Применение ускорителей в радиационных технологиях In the paper the processes of accumulation of radiation defects, formed by fragments of ²³⁸U nucleus fission, for forming of amorphous phases in the bulk of single-crystal silicon and the influence of the temperature annealing of defects on the properties of disordered structures are investigated. Исследуются процессы накопления радиационных дефектов, образованных осколками деления ядер ²³⁸U, для формирования аморфных фаз в объеме монокристаллического кремния и влияния температуры отжига дефектов на свойства разупорядоченных структур. Досліджуються процеси накопичення радіаційних дефектів, утворених осколками ділення ядер ²³⁸U, для формування аморфних фаз в об'ємі монокристалічного кремнію та впливу температури віджига дефектів на властивості розупорядкованих структур. 2006 Article An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties / A.N. Dovbnya, V.P. Yefimov, G.D. Pugachev, V.S. Dyomin, N.A. Dovbnya, J.E. Gordienko, B.G. Borodin, S.V. Babychenko, T.A. Semenets // Вопросы атомной науки и техники. — 2006. — № 3. — С. 179-181. — Бібліогр.: 4 назв. — англ. 1562-6016 PACS: 61.82. Fk http://dspace.nbuv.gov.ua/handle/123456789/79885 en Вопросы атомной науки и техники Національний науковий центр «Харківський фізико-технічний інститут» НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
topic Применение ускорителей в радиационных технологиях
Применение ускорителей в радиационных технологиях
spellingShingle Применение ускорителей в радиационных технологиях
Применение ускорителей в радиационных технологиях
Dovbnya, A.N.
Yefimov, V.P.
Pugachev, G.D.
Dyomin, V.S.
Dovbnya, N.A.
Gordienko, J.E.
Borodin, B.G.
Babychenko, S.V.
Semenets, T.A.
An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties
Вопросы атомной науки и техники
description In the paper the processes of accumulation of radiation defects, formed by fragments of ²³⁸U nucleus fission, for forming of amorphous phases in the bulk of single-crystal silicon and the influence of the temperature annealing of defects on the properties of disordered structures are investigated.
format Article
author Dovbnya, A.N.
Yefimov, V.P.
Pugachev, G.D.
Dyomin, V.S.
Dovbnya, N.A.
Gordienko, J.E.
Borodin, B.G.
Babychenko, S.V.
Semenets, T.A.
author_facet Dovbnya, A.N.
Yefimov, V.P.
Pugachev, G.D.
Dyomin, V.S.
Dovbnya, N.A.
Gordienko, J.E.
Borodin, B.G.
Babychenko, S.V.
Semenets, T.A.
author_sort Dovbnya, A.N.
title An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties
title_short An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties
title_full An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties
title_fullStr An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties
title_full_unstemmed An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties
title_sort influence of gamma-irradiation and ²³⁸u fragments on single-crystal silicon properties
publisher Національний науковий центр «Харківський фізико-технічний інститут» НАН України
publishDate 2006
topic_facet Применение ускорителей в радиационных технологиях
url http://dspace.nbuv.gov.ua/handle/123456789/79885
citation_txt An influence of gamma-irradiation and ²³⁸U fragments on single-crystal silicon properties / A.N. Dovbnya, V.P. Yefimov, G.D. Pugachev, V.S. Dyomin, N.A. Dovbnya, J.E. Gordienko, B.G. Borodin, S.V. Babychenko, T.A. Semenets // Вопросы атомной науки и техники. — 2006. — № 3. — С. 179-181. — Бібліогр.: 4 назв. — англ.
series Вопросы атомной науки и техники
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first_indexed 2023-10-18T19:19:43Z
last_indexed 2023-10-18T19:19:43Z
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