The silica and silicon luminescence induced by fast hydrogen ions

The results of silica and silicon luminescence induced by hydrogen ions bombardment with energy 0.2 ÷ 0,45 MeV and 0.8 ÷ 2.4 MeV were presented in this paper. It was obtained that the ionluminescence spectra of SiO₂ were changed under hydrogen ions bombardment essentially. The relation between light...

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Дата:2000
Автори: Kalantaryan, O.V., Kononenko, S.I., Muratov, V.I.
Формат: Стаття
Мова:English
Опубліковано: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2000
Назва видання:Вопросы атомной науки и техники
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Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/81676
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:The silica and silicon luminescence induced by fast hydrogen ions / O.V. Kalantaryan, S.I. Kononenko, V.I. Muratov // Вопросы атомной науки и техники. — 2000. — № 1. — С. 189-192. — Бібліогр.: 22 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-81676
record_format dspace
spelling irk-123456789-816762015-05-20T03:02:23Z The silica and silicon luminescence induced by fast hydrogen ions Kalantaryan, O.V. Kononenko, S.I. Muratov, V.I. Нерелятивистская плазменная элeктрoника The results of silica and silicon luminescence induced by hydrogen ions bombardment with energy 0.2 ÷ 0,45 MeV and 0.8 ÷ 2.4 MeV were presented in this paper. It was obtained that the ionluminescence spectra of SiO₂ were changed under hydrogen ions bombardment essentially. The relation between light intensity and implantation dose was determined. The silicon spectra were measured in the near ultraviolet and visible regions of wavelength. The spectra consist of three wide bands. The band with maximum at 326 - 328 nm was not observed earlier. The mechanisms of generation of these bands are discussed. The possibilities to discover oxide layer formed by the natural way on a silicon surface are shown. The novel method for control of proton dose in quartz was proposed. 2000 Article The silica and silicon luminescence induced by fast hydrogen ions / O.V. Kalantaryan, S.I. Kononenko, V.I. Muratov // Вопросы атомной науки и техники. — 2000. — № 1. — С. 189-192. — Бібліогр.: 22 назв. — англ. 1562-6016 http://dspace.nbuv.gov.ua/handle/123456789/81676 533.9 en Вопросы атомной науки и техники Національний науковий центр «Харківський фізико-технічний інститут» НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
topic Нерелятивистская плазменная элeктрoника
Нерелятивистская плазменная элeктрoника
spellingShingle Нерелятивистская плазменная элeктрoника
Нерелятивистская плазменная элeктрoника
Kalantaryan, O.V.
Kononenko, S.I.
Muratov, V.I.
The silica and silicon luminescence induced by fast hydrogen ions
Вопросы атомной науки и техники
description The results of silica and silicon luminescence induced by hydrogen ions bombardment with energy 0.2 ÷ 0,45 MeV and 0.8 ÷ 2.4 MeV were presented in this paper. It was obtained that the ionluminescence spectra of SiO₂ were changed under hydrogen ions bombardment essentially. The relation between light intensity and implantation dose was determined. The silicon spectra were measured in the near ultraviolet and visible regions of wavelength. The spectra consist of three wide bands. The band with maximum at 326 - 328 nm was not observed earlier. The mechanisms of generation of these bands are discussed. The possibilities to discover oxide layer formed by the natural way on a silicon surface are shown. The novel method for control of proton dose in quartz was proposed.
format Article
author Kalantaryan, O.V.
Kononenko, S.I.
Muratov, V.I.
author_facet Kalantaryan, O.V.
Kononenko, S.I.
Muratov, V.I.
author_sort Kalantaryan, O.V.
title The silica and silicon luminescence induced by fast hydrogen ions
title_short The silica and silicon luminescence induced by fast hydrogen ions
title_full The silica and silicon luminescence induced by fast hydrogen ions
title_fullStr The silica and silicon luminescence induced by fast hydrogen ions
title_full_unstemmed The silica and silicon luminescence induced by fast hydrogen ions
title_sort silica and silicon luminescence induced by fast hydrogen ions
publisher Національний науковий центр «Харківський фізико-технічний інститут» НАН України
publishDate 2000
topic_facet Нерелятивистская плазменная элeктрoника
url http://dspace.nbuv.gov.ua/handle/123456789/81676
citation_txt The silica and silicon luminescence induced by fast hydrogen ions / O.V. Kalantaryan, S.I. Kononenko, V.I. Muratov // Вопросы атомной науки и техники. — 2000. — № 1. — С. 189-192. — Бібліогр.: 22 назв. — англ.
series Вопросы атомной науки и техники
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AT kalantaryanov silicaandsiliconluminescenceinducedbyfasthydrogenions
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first_indexed 2023-10-18T19:23:41Z
last_indexed 2023-10-18T19:23:41Z
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