Ion implantation, ion-beam mixing during simultaneous ion implantation and metal deposition
This article present‘s researching results of ion implantation Ta in Cu monocrystal with different plane.
 Also the article demonstrates the processes of ion mixing and deposition of ions Ta+ and Cu+ on
 polycrystalline Al substrate. Effect of crystalline plane line was found. At the...
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| Zitieren: | Ion implantation, ion-beam mixing during simultaneous ion implantation and metal deposition / M.A. Lisovenko, K.O. Belovol, O.V. Kyrychenko, V.T. Shablya, J. Kassi, B.P. Gritsenko, V.V. Burkovska // Физическая инженерия поверхности. — 2013. — Т. 11, № 4. — С. 406–411. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860249112330371072 |
|---|---|
| author | Lisovenko, M.A. Belovol, K.O. Kyrychenko, O.V. Shablya, V.T. Kassi, J. Gritsenko, B.P. Burkovska, V.V. |
| author_facet | Lisovenko, M.A. Belovol, K.O. Kyrychenko, O.V. Shablya, V.T. Kassi, J. Gritsenko, B.P. Burkovska, V.V. |
| citation_txt | Ion implantation, ion-beam mixing during simultaneous ion implantation and metal deposition / M.A. Lisovenko, K.O. Belovol, O.V. Kyrychenko, V.T. Shablya, J. Kassi, B.P. Gritsenko, V.V. Burkovska // Физическая инженерия поверхности. — 2013. — Т. 11, № 4. — С. 406–411. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Физическая инженерия поверхности |
| description | This article present‘s researching results of ion implantation Ta in Cu monocrystal with different plane.
Also the article demonstrates the processes of ion mixing and deposition of ions Ta+ and Cu+ on
polycrystalline Al substrate. Effect of crystalline plane line was found. At the same implantation dose
the dose at surface layer is different. Possibilities of the simultaneous ion implantation Ta and Cu and
deposition on Al substrate are showed. It causes good corrosion resistance, microhardness increasing
of the surface layers.
Встатье представленырезультаты исследований процессов ионной имплантации Ta в монокриcталле Cu с различной плоскостью. А также процессы ионного перемешивания и осаждения
ионов Ta+ и Cu+ на подложку c поликристаллического Al. Обнаружено влияние направления
кристаллической плоскости и то, что при одинаковой дозе имплантации в поверхностном слое
внедренная доза разная. Показаны возможности одновременной имплантации ионов Ta и Cu и
осаждения на подложку из Al, что приводит к хорошей коррозионной стойкости, увеличению
микротвердости поверхностных слоев.
У статті представлені результати дослідження процесів іонної імплантації Ta у монокристали
Cu з різними площинами. А також процеси іонного змішування і осадження іонів Ta+ і Cu+ на
підкладинку з полікристалічного Al. Виявлено вплив напряму кристалічної площини і те, що при
однаковій дозі імплантації в поверхневому шарі імплантована доза різна. Показані можливості
одночасної імплантації іонів Ta та Cu і осадження на підкладинку з Al, що сприяє хорошій корозійній стійкості та підвищенню мікротвердості поверхневих шарів.
|
| first_indexed | 2025-12-07T18:41:04Z |
| format | Article |
| fulltext |
406
INTRODUCTION
High dose ion implantation is an effective method of
surface modification and improving the servicing
characteristics of metals and alloys. This method is
developed very intensively due to its advantages in
comparison to the traditional methods of surface
properties improvement [1]. There are many inves-
tigations of processes, which take place in surface
layers of metals during ion implantation [2 − 4], but
there exist a lot of contradictory results related to
intensive and high-dose implantation of a single crystal
using multiple-charged ions. By now, there have
UDC: 539.121.8.04
ION IMPLANTATION, ION-BEAM MIXING DURING SIMULTANEOUS ION
IMPLANTATION AND METAL DEPOSITION
M.A. Lisovenko1, K.O. Belovol1, O.V. Kyrychenko1, V.T. Shablya1,
J. Kassi1, B.P. Gritsenko2, V.V. Burkovska3
1Sumy State University
Ukraine
2Institute of Strength Physics and Materials Science of RAS (Tomsk)
Russia
3V.N. Karazin KharkivNational University
Ukraine
Received 06.12.2013
This article present‘s researching results of ion implantation Ta in Cu monocrystal with different pla-
ne. Also the article demonstrates the processes of ion mixing and deposition of ions Ta+ and Cu+ on
polycrystalline Al substrate. Effect of crystalline plane line was found. At the same implantation dose
the dose at surface layer is different. Possibilities of the simultaneous ion implantation Ta and Cu and
deposition on Al substrate are showed. It causes good corrosion resistance, microhardness increasing
of the surface layers.
Keywords: ion implantation, ion-plasma deposition, corrosion resistance, microhardness.
ИОННАЯ ИМПЛАНТАЦИЯ И ПЕРЕМЕШИВАНИЕ ИОННЫХ ПУЧКОВ ПРИ
ОДНОВРЕМЕННОМ ОСАЖДЕНИИ МЕТАЛЛА И ИОННОЙ ИМПЛАНТАЦИИ
М.А. Лисовенко, К.О. Беловол, О.В. Кириченко, В.Т. Шабля,
J. Kassi, Б.П. Гриценко, В.В. Бурковская
В статье представлены результаты исследований процессов ионной имплантации Ta в монокриc-
талле Cu с различной плоскостью. А также процессы ионного перемешивания и осаждения
ионов Ta+ и Cu+ на подложку c поликристаллического Al. Обнаружено влияние направления
кристаллической плоскости и то, что при одинаковой дозе имплантации в поверхностном слое
внедренная доза разная. Показаны возможности одновременной имплантации ионов Ta и Cu и
осаждения на подложку из Al, что приводит к хорошей коррозионной стойкости, увеличению
микротвердости поверхностных слоев.
Ключевые слова: ионная имплантация, ионно-плазменное осаждение, коррозионная стойкость,
микротвердость.
ІОННА ІМПЛАНТАЦІЯ І ПЕРЕМІШУВАННЯ ІОННИХ ПУЧКІВ ПРИ
ОДНОЧАСНОМУ ОСАДЖЕННІ МЕТАЛУ ТА ІОННІЙ ІМПЛАНТАЦІЇ
М.А. Лісовенко, К.О. Біловол, О.В. Кириченко, В.Т. Шабля,
J. Kassi, Б.П. Гриценко, В.В. Бурковська
У статті представлені результати дослідження процесів іонної імплантації Ta у монокристали
Cu з різними площинами. А також процеси іонного змішування і осадження іонів Ta+ і Cu+ на
підкладинку з полікристалічного Al. Виявлено вплив напряму кристалічної площини і те, що при
однаковій дозі імплантації в поверхневому шарі імплантована доза різна. Показані можливості
одночасної імплантації іонів Ta та Cu і осадження на підкладинку з Al, що сприяє хорошій коро-
зійній стійкості та підвищенню мікротвердості поверхневих шарів.
Ключові слова: іонна імплантація, іонно-плазмове осадження, корозійна стійкість, мікро-
твердість.
Lisovenko M.A., Belovol K.O., Kyrychenko O.V., Shablya V.T., Kassi J., Gritsenko B.P., Burkovska V.V., 2013
407ФІП ФИП PSE, 2013, т. 11, № 4, vol. 11, No. 4
been only a few papers on implantation into metal
crystals, due to the difficulty of getting good quality
surfaces of metal single crystals, and also because
of the few research groups having ion sources of
high intensity. Such investigations are needed, be-
cause processes forming defective profiles and im-
planted impurities are not well understood.
As is well known, the main disadvantages of ion
implantation are (i) a relatively low production ef-
ficiency, which is determined by the rate of the
implanted dose accumulation amounting to << 1016
cm−2 over on area of 300 cm2 (1,2) and (ii) a small
implant concentration for ions with large masses,
which is explained by the increasing role of sputtering.
At the same time, the process of implantation by
recoil ions (or ion-beam mixing) based on the incor-
poration of atoms from surface layers to which a ki-
netic energy is transferred by the primary beam has
good prospects as a method for obtaining new struc-
tures and compounds with preset properties [2 −
4].
One of the possible ways of eliminating the afo-
rementioned disadvantages is to use a combined se-
tup including an arc plasma source for the coating
deposition and an additional source for the ion im-
plantation. In such a system, the process may be
conducted using the two sources operating either
simultaneously or sequentially [4]. The combined
process involves mutual diffusion of atoms from the
coating and substrate as a result of the atomic or
ballistic mixing. This results in the smearing of a sharp
interface between the materials and increasing the
adhesion, which allows the deposition-implantation
process to be used for predicted modification of
the working properties of articles and materials.
In the case of high dose (up to 1016 cm−2 per
pulse) ion implantation the sputtering processes is
of great importance. There have been almost no in-
vestigations on surfaces after high-dose ion im-
plantation in a carbon-containing medium, which is
used to produce the C-film and carbides in the sur-
face layer [5]. This paper deals with analysis of the
changes in the surface layer of Cu (100), (111) which
result from high dose (1017 cm−2) Ta+ ion implanta-
tion.
Mainly three different types of experiments are
presented here, in which the influence of ion im-
plantation on material changes has been investigated.
These are: 1) studies of element distribution after
Ta+ implantation and its dependence on the plane of
the ion treatment; 2) microhardness measurements
of samples surface; 3) corrosion resistance studies
for treated and untreated samples.
The purpose of our experiments was to study
the process of ion-beam mixing during simultaneous
deposition and implantation of Cu and Та ions into
Al substrates.
EXPERIMENT
We investigated Cu single samples cut out in parallel
to the surface (100) and (111). The single crystals
had surfaces of 10×10×3 mm in dimension. The Ta+
ion implantation was carried out with an “Diane-2”
implanter. The parameters of the ion treatment are
presented in tabl. 1.
The samples were cooled by water and their
temperature during the implantation didn’t exceed
473 K.
The experiments were performed with 200- or
500-µ-thick Al samples, the surface of which was
preliminary cleaned by sputtering with Ar+ ions. Then
Cu+ or Ta+ ions were either plasma-deposited with
or without additional implantation of the same ions
at an accelerating voltage of 60 kV.
The samples were prepared in the following
regimes (subscripts “i” and “d“ indicate implantation
and deposition, respectively):
Al(Tad
+ + Таi
+ + Tad
+ ), implantation dose
≈8⋅1015, Та film thickness ≈40 nm; (1)
Al(Tad
+ + Таi
+ + Tad
+ ) + (Cud
+ + Cui
+ + Cud
+ )
implantation dose ≈8⋅1015, Та film thickness
25 nm, Cu film thickness ≈30 nm; (2)
Al(Tad
+ + Таi
+ + Tad
+ ) + (Cud
+ + Cui
+ + Cud
+ ) +
+ (Tad
+ + Таi
+ ), implantation dose ≈1016, first Ta
film thickness ≈45 nm, Cu film thickness ≈55 nm;
second Та film thickness ≈70 nm; (3)
Regime 3 + Tad
+. (4)
The implantation and deposition processes were
carried out using an accelerator with an implantation
Table 1
Parameters of the ion-beam treatment
Ion source Arc-type
Ions Ta+
ions energy 40 keV
frequency of pulses 50 Hz
pulse duration 200 мs
ions current 10 mA
ion beam diameter 200 mm
implantation dose 1017 cm–2
Residual pressure 10–3 Pa
M.A. LISOVENKO, K.O. BELOVOL, O.V. KYRYCHENKO, V.T. SHABLYA, J. KASSI, B.P. GRITSENKO, V.V. BURKOVSKA
408
pulse duration of about 200 |tm and a deposition
pulse duration of 0.8 −1 ms; the process was con-
ducted in a vacuum of >>10−3 Pa. The experimental
regimes are described in more detail elsewhere [2].
The experimental conditions were varied by cont-
rolling the implantation dose, substrate temperature,
pulse repetition rate, and the film deposition rate.
The elemental compositions were studied by Auger
electron spectroscopy (AES) and secondary ion
mass spectrometry (SIMS) [5, 6]. The ion sputtering
was performed either with an Ar+ beam with the
parameters E = 2 keV, j = 5⋅10−5 A/cm2 (dynamic
sputtering mode) or with an N+ ion beam with
E = 2keV, j = 1⋅10−7 A/cm2 (static sputtering mode).
The experimental setup was equipped with an energy
analyzer that allowed the energy distributions of
secondary ions (EDSI) to be measured.
RESULTS AND DISCUSSION
MORPHOLOGY CHANGES
Ion implantation leads to the certain changes in the
surface morphology of the crystals. The pictures of
the sample surfaces before and after implantation
are shown in fig. 1. (In picture c) we can see drops
of metal, which are typical for high-dose ion implan-
tation. This picture corresponds to the plane of irra-
diation (111). The more interesting is the fig. 1b. In
this picture the surface of copper single crystal (100)
after implantation is shown. As we can see there are
many crystallites on the surface
ELEMENT COMPOSITION
The RBS spectra are given in the fig. 2. Fig. 2
demonstrates the energy spectra of back-scattered
protons for Cu samples (100) and (111) implanted
by the Ta+ ions with a 1017 cm-2 dose. There are
two peaks on the both spectra. The first one is in
the region of the 590 channel, corresponding to the
protons output scattered on the carbon ions. The
second one is in the region of 830 channel and
corresponds to the resonance output of H+ scattered
on implanted Ta atoms. Also on both spectra one
can see the shelf in the region of 640 channel. This
shelf is a sign of oxygen atoms presenting in the near-
surface layer [6]. Ion implantation was accompanied
a)
b)
c)
Fig. 1. Surface morphology of a copper single crystal
irradiated with Ta+ atoms in different planes: a) untreated
surface; b) Cu(100); c) Cu(111).
a)
ON IMPLANTATION, ION-BEAM MIXING DURING SIMULTANEOUS ION IMPLANTATION AND METAL DEPOSITION
ФІП ФИП PSE, 2013, т. 11, № 4, vol. 11, No. 4
409ФІП ФИП PSE, 2013, т. 11, № 4, vol. 11, No. 4
by carbonization and oxidation of the sample
surfaces due to poor vacuum
(10−3 Pa) [7].
In fig. 3 concentration profiles of elements in
surface layer calculated from the RBS spectra are
presented.
As we can see the maximum of the concentration
of Ta+ atoms is observed on the surface but not in
the depth of a sample.
HARDNESS TESTS
The results of hardness tests are shown in the
tabl. 2.
It may be seen that hardness improvement was
observed for both of the implanted samples. For
planes (100) and (111) enhancement of hardness
was 32,4% and 28,9% respectively.
The surface microhardness of ion-implanted
samples is determined by assuming the creation a
uniform layer in the material.
It is thought that the increased microhardness is
due to the radiation damage, leading to the creation
and pinning a big number of dislocations.
CORROSION RESISTANCE
Tabl. 3 presents the results of the corrosion studies
for the single crystals of copper (100). We can see
that ion implantation enhance corrosion resistance
properties of the surface of single crystal of copper.
The mass coefficient of corrosion for implanted
sample is one order lower than for untreated one.
This enhancement occurred due to the formation
of carbon and oxide thick film on the surface of
sample. The presence of such film is shown in fig. 3,
where the concentration profiles of elements are
b)
Fig. 2. RBS spectra for single crystal of copper implanted
with Ta+ ions in planes: a) Cu (100); b) Cu (111).
a)
b)
Fig. 3. Concentration profiles of copper single crystals
implanted with Ta+ ions in planes Cu(100) (a) and Cu(111)
(b).
Table 2
Microhardness measured by indentation
techniques of mono crystal of copper (100) and
(111) with and without Ta+ implantation
Sample Values of microhardness
MPa
Non-implanted surface of Cu 346
Cu (100) 458
Cu (111) 446
Table 3
Results of the corrosion studies of single
crystal Cu (111) in H2SO4 acid
Sample ImplantedNon-implanted
Surface area of etching, mm2 150,4446,33
Mass before etching, g 1,595690,99231
Mass after etching, g 1,404550,80412
Loses of mass, g 0,191140,18819
Mass coefficient of corrosi- 0,0003176350,001015487
M.A. LISOVENKO, K.O. BELOVOL, O.V. KYRYCHENKO, V.T. SHABLYA, J. KASSI, B.P. GRITSENKO, V.V. BURKOVSKA
410
presented. This film protects underlying regions from
being chemically attacked by aqueous exposure.
ION-BEAM MIXING AND METAL
DEPOSITION
A comparison of the changes in the EDSI pattern
measured on the Cu and Та films on Al obtained by
deposition without mixing (fig. 4a) and by a com-
bined deposition-implantation process in regime 3
(fig. 4b) shows evidence of a change in the character
of chemical bonds as a result of the ion-beam mixing.
The EDSI peak position changes only slightly (by
10 eV) toward greater energies. The width of the
energy distribution exhibits a more pronounced
variation, considerably increasing upon the onset of
sputtering of the film-substrate interface (fig. 4b,
curves 1, 4, 7, and 9 for Cu, curves 2, 5, 6, 8 for
Ta. and curves 3 and 10 for Al). The most significant
changes in the width of energy spectra are observed
for Cu and Al ions. In addition, an interesting feature
is revealed by curves 8 and 10 in fig. 4b showing
several peaks instead of one, which is evidence of
an additional interaction with the residual atmosphere
components-probably, with oxygen, leading to the
formation of oxides (Ta2O5-Al2O3) at the interpha-
se boundary. All these changes in the EDSI curves
(width, main peak position, appearance of additional
peaks) are indicative of an increase in the binding
energy and the work function. This, in turn, is eviden-
ce of the interaction between target components at
the film-substrate interface (caused by ballistic mixing
and recoil ion implantation) with the formation of a
complex system of intermetallic phases
An analysis of the elemental depth-concentration
profiles observed for the samples obtained in two
regimes (fig. 5) shows, in addition to the complicated
shape of Ta and Cu profiles (multipeak structure),
the presence of a high concentration of carbon on
the surface and at the film-substrate interface.
Oxygen also exhibits a complicated profile and an
increase in concentration at the film-substrate
interface. The shapes of the Auger electron spectra
of oxygen and carbon indicated that these elements
could be present in the form of oxides and carbides,
as well as in the free state.
a)
b)
Fig. 4. (a) Energy profiles of secondary ions for the surface
of (a) Al substrate after deposition of Cu and Ta and (b) Al
substrate after deposition and implantation of the same
ions in regime 3 (in various regions of the coating).
a)
b)
Fig. 5. (a) Elemental depth-concentration profiles obtained
by SIMS for the surface layers of Al after implantation of
Cu (20 min) and deposition – implantation of Ta (10 min,
regime 2). (b) Elemental depth (sputter time)-composition
profiles abtained by AES for the surface layers of Al after
deposition – implantation of Ta and Cu (15 min, regime 3).
ON IMPLANTATION, ION-BEAM MIXING DURING SIMULTANEOUS ION IMPLANTATION AND METAL DEPOSITION
ФІП ФИП PSE, 2013, т. 11, № 4, vol. 11, No. 4
411ФІП ФИП PSE, 2013, т. 11, № 4, vol. 11, No. 4
The measurements of microhardness of the
coated samples, performed with the aid of the Kno-
op pyramidal indenter with variable load, showed
that the ion-beam mixing leads to an increase in
microhardness up to 153 ± 6 kg/mm2. This gain in
microhardness was markedly greater than that in the
case of pure implantation with Cu or Ta, where the
resulting microhardness was 96 ± 4 kg/mm2. It must
be noted that the thickness of the hardened layer in
the case of the combined deposition – implantation
process is also greater than that in implanted alumi-
num.
The results of adhesion testing showed that the
combined deposition – implantation process in-
creases the adhesion of coating to the aluminum
substrate above 120 ± 8 kg/mm2. The corrosion
resistance of the coated material also markedly
increased by almost two orders of magnitude as
compared to the initial material.
Element composition and its depth distribution
were analyzed by means of Rutherford Back-
scattering Spectrometry (RBS) of protons with
energy of 1745 keV. The spectra were recorded at
υ = 60° (the angle between the beam and the target)
and the scattering angle Θ = 170°. The concentration
depth profiles of the elements were obtained under
energy spectra processing using special computer
program.
Changes of morphology of samples surface were
observed with the help of transmission electron
microscopy technique.
Microhardness measurements were performed
with nano-indenter PMT-3, where four-faced
diamond pyramid was used. The load on the
pyramid was 7 g. Microhardness was measured for
implanted and non-implanted surfaces of single
crystal that made it possible to determine the relative
improvement of surface hardness as a result of ion
implantation.
Corrosion tests were carried out by means of
etching implanted and non-implanted samples in a
2 M solution of H2SO4 acid. The crystals were ex-
posed to the aggressive environment for four hours.
Then the mass coefficient of corrosion was calculated
for both implanted and non-implanted samples using
following expression:
mass
B Am mK
S t
−=
⋅ ,
where mB – mass before corrosion test, mA – mass
after corrosion tests; S – sample surface area; t –
time of corrosion test.
CONCLUSIONS
Tantalum ion implantation in a copper single crystal
(100), (111) has been studied. The element distribu-
tion dependence on the direction of irradiation was
observed. The highest concentration of Ta+ was for
copper single crystal (100). This plane is a plane of
the closest packing, so penetration of Ta+ ions in
this direction is the most difficult.
As microhardness tests showed ion implantation
induced microhardness enhancement of the copper
surface for both of the samples.
A carbon and oxide-containing film formation was
observed. This film defends the surface from being
attacked by aqueous exposure. So it leads to the
increasing of the corrosion resistance of the surface.
Thus, the deposition Ta and Cu ions accompa-
nied by their simultaneous implantation into Al
substrates results in the formation of coatings with
complicated elemental profiles revealing mutual
penetration of elements from the film into the
substrate and vice versa. All these factors suggest
that the combined deposition – implantation process
is more effective than ion implantation alone. This is
also manifested by increasing microhardness and
adhesion values and by a two-order increase in the
corrosion resistance of aluminum.
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M.A. LISOVENKO, K.O. BELOVOL, O.V. KYRYCHENKO, V.T. SHABLYA, J. KASSI, B.P. GRITSENKO, V.V. BURKOVSKA
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| id | nasplib_isofts_kiev_ua-123456789-100596 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1999-8074 |
| language | English |
| last_indexed | 2025-12-07T18:41:04Z |
| publishDate | 2013 |
| publisher | Науковий фізико-технологічний центр МОН та НАН України |
| record_format | dspace |
| spelling | Lisovenko, M.A. Belovol, K.O. Kyrychenko, O.V. Shablya, V.T. Kassi, J. Gritsenko, B.P. Burkovska, V.V. 2016-05-24T12:56:50Z 2016-05-24T12:56:50Z 2013 Ion implantation, ion-beam mixing during simultaneous ion implantation and metal deposition / M.A. Lisovenko, K.O. Belovol, O.V. Kyrychenko, V.T. Shablya, J. Kassi, B.P. Gritsenko, V.V. Burkovska // Физическая инженерия поверхности. — 2013. — Т. 11, № 4. — С. 406–411. — Бібліогр.: 6 назв. — англ. 1999-8074 https://nasplib.isofts.kiev.ua/handle/123456789/100596 539.121.8.04 This article present‘s researching results of ion implantation Ta in Cu monocrystal with different plane.
 Also the article demonstrates the processes of ion mixing and deposition of ions Ta+ and Cu+ on
 polycrystalline Al substrate. Effect of crystalline plane line was found. At the same implantation dose
 the dose at surface layer is different. Possibilities of the simultaneous ion implantation Ta and Cu and
 deposition on Al substrate are showed. It causes good corrosion resistance, microhardness increasing
 of the surface layers. Встатье представленырезультаты исследований процессов ионной имплантации Ta в монокриcталле Cu с различной плоскостью. А также процессы ионного перемешивания и осаждения
 ионов Ta+ и Cu+ на подложку c поликристаллического Al. Обнаружено влияние направления
 кристаллической плоскости и то, что при одинаковой дозе имплантации в поверхностном слое
 внедренная доза разная. Показаны возможности одновременной имплантации ионов Ta и Cu и
 осаждения на подложку из Al, что приводит к хорошей коррозионной стойкости, увеличению
 микротвердости поверхностных слоев. У статті представлені результати дослідження процесів іонної імплантації Ta у монокристали
 Cu з різними площинами. А також процеси іонного змішування і осадження іонів Ta+ і Cu+ на
 підкладинку з полікристалічного Al. Виявлено вплив напряму кристалічної площини і те, що при
 однаковій дозі імплантації в поверхневому шарі імплантована доза різна. Показані можливості
 одночасної імплантації іонів Ta та Cu і осадження на підкладинку з Al, що сприяє хорошій корозійній стійкості та підвищенню мікротвердості поверхневих шарів. en Науковий фізико-технологічний центр МОН та НАН України Физическая инженерия поверхности Ion implantation, ion-beam mixing during simultaneous ion implantation and metal deposition Ионная имплантация и перемешивание ионных пучков при одновременном осаждении металла и ионной имплантации Іонна імплантація і перемішування іонних пучків при одночасному осадженні металу та іонній імплантації Article published earlier |
| spellingShingle | Ion implantation, ion-beam mixing during simultaneous ion implantation and metal deposition Lisovenko, M.A. Belovol, K.O. Kyrychenko, O.V. Shablya, V.T. Kassi, J. Gritsenko, B.P. Burkovska, V.V. |
| title | Ion implantation, ion-beam mixing during simultaneous ion implantation and metal deposition |
| title_alt | Ионная имплантация и перемешивание ионных пучков при одновременном осаждении металла и ионной имплантации Іонна імплантація і перемішування іонних пучків при одночасному осадженні металу та іонній імплантації |
| title_full | Ion implantation, ion-beam mixing during simultaneous ion implantation and metal deposition |
| title_fullStr | Ion implantation, ion-beam mixing during simultaneous ion implantation and metal deposition |
| title_full_unstemmed | Ion implantation, ion-beam mixing during simultaneous ion implantation and metal deposition |
| title_short | Ion implantation, ion-beam mixing during simultaneous ion implantation and metal deposition |
| title_sort | ion implantation, ion-beam mixing during simultaneous ion implantation and metal deposition |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/100596 |
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