Контакти з бар’єром Шотткі Au–TiBx–n-GaN
Досліджено вплив дефектности епітаксійної плівки нітриду ґалію з концентрацією донорів ≈ 4∙10¹⁷ см⁻³ на механізми струмоперенесення в бар’єрних контактах на основі Au–TiBx–n-GaN на монокристалічному підложжі Al₂O₃. Исследовано влияние дефектности эпитаксиальной плёнки нитрида галлия с концентрацией...
Saved in:
| Published in: | Наносистеми, наноматеріали, нанотехнології |
|---|---|
| Date: | 2015 |
| Main Author: | Кудрик, Р.Я. |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
Інститут металофізики ім. Г.В. Курдюмова НАН України
2015
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/107290 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Контакти з бар’єром Шотткі Au–TiBx–n-GaN / Р.Я. Кудрик // Наносистеми, наноматеріали, нанотехнології: Зб. наук. пр. — К.: РВВ ІМФ, 2015. — Т. 13, № 3. — С. 449-457. — Бібліогр.: 5 назв. — укр. |
Institution
Digital Library of Periodicals of National Academy of Sciences of UkraineSimilar Items
Schottky-barrier Au–TiBx–n-GaN contacts
by: Ya. Kudryk
Published: (2015)
by: Ya. Kudryk
Published: (2015)
On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes
by: Belyaev, A.E., et al.
Published: (2007)
by: Belyaev, A.E., et al.
Published: (2007)
Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system
by: Konakova, R.V., et al.
Published: (2001)
by: Konakova, R.V., et al.
Published: (2001)
Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs
by: Venger, E.F., et al.
Published: (1999)
by: Venger, E.F., et al.
Published: (1999)
Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures
by: Abdizhaliev, S.K., et al.
Published: (2003)
by: Abdizhaliev, S.K., et al.
Published: (2003)
SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
by: Boltovets, N.S., et al.
Published: (2004)
by: Boltovets, N.S., et al.
Published: (2004)
Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures
by: Belyaev, A.E., et al.
Published: (2008)
by: Belyaev, A.E., et al.
Published: (2008)
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts
by: A. V. Sachenko, et al.
Published: (2013)
by: A. V. Sachenko, et al.
Published: (2013)
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts
by: Sachenko, A.V., et al.
Published: (2013)
by: Sachenko, A.V., et al.
Published: (2013)
Investigation of traps in AlGaN/GaN heterostructures by ultrasonic vibrations
by: V. V. Kaliuzhnyi, et al.
Published: (2021)
by: V. V. Kaliuzhnyi, et al.
Published: (2021)
Investigation of traps in AlGaN/GaN heterostructures by ultrasonic vibrations
by: V. V. Kaliuzhnyi, et al.
Published: (2021)
by: V. V. Kaliuzhnyi, et al.
Published: (2021)
Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs
by: A. G. Golenkov, et al.
Published: (2015)
by: A. G. Golenkov, et al.
Published: (2015)
Optical properties of irradiated epitaxial GaN films
by: Ye. Bieliaiev, et al.
Published: (2014)
by: Ye. Bieliaiev, et al.
Published: (2014)
Optical properties of irradiated epitaxial GaN films
by: A. E. Belyaev, et al.
Published: (2014)
by: A. E. Belyaev, et al.
Published: (2014)
Impact of proton irradiation on AlGaN/GaN transistors with high electron mobility
by: M. Bataev, et al.
Published: (2011)
by: M. Bataev, et al.
Published: (2011)
Некоторые особенности фотоэлектрических характеристик двухбазовой Ag–N⁰Al₀,₂Ga₀,₈As–n+GaAs–n⁰Ga₀,₉In₀,₁As–Au-структуры
by: Ёдгорова, Д.М., et al.
Published: (2008)
by: Ёдгорова, Д.М., et al.
Published: (2008)
Некоторые особенности фотоэлектрических характеристик двухбазовой Ag–N⁰Al₀.₂Ga₀.₈As–n⁺GaAs–n⁰Ga₀.₉In₀.₁As–Au-структуры
by: Yodgorova, D. M., et al.
Published: (2008)
by: Yodgorova, D. M., et al.
Published: (2008)
Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch
by: Elkadadra, A., et al.
Published: (2010)
by: Elkadadra, A., et al.
Published: (2010)
Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization
by: Naumov, A.V., et al.
Published: (2015)
by: Naumov, A.V., et al.
Published: (2015)
Significance of DX-centers for acoustic induced reconstruction processes of defects in GaN/AlGaN
by: Ya. M. Olikh, et al.
Published: (2021)
by: Ya. M. Olikh, et al.
Published: (2021)
Effect of neutron irradiation on characteristics of power InGaN/GaN light-emitting diodes
by: O. I. Vlasenko, et al.
Published: (2015)
by: O. I. Vlasenko, et al.
Published: (2015)
Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization
by: A. V. Naumov, et al.
Published: (2015)
by: A. V. Naumov, et al.
Published: (2015)
X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
by: V. P. Kladko, et al.
Published: (2010)
by: V. P. Kladko, et al.
Published: (2010)
X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
by: Kladko, V.P., et al.
Published: (2010)
by: Kladko, V.P., et al.
Published: (2010)
Calculation of electron mobility and effect of dislocation scattering in GaN
by: Kundu, J., et al.
Published: (2007)
by: Kundu, J., et al.
Published: (2007)
Reflection coefficient and optical conductivity of gallium nitride GaN
by: J. O. Akinlami, et al.
Published: (2012)
by: J. O. Akinlami, et al.
Published: (2012)
Reflection coefficient and optical conductivity of gallium nitride GaN
by: Akinlami, J.O., et al.
Published: (2012)
by: Akinlami, J.O., et al.
Published: (2012)
Ultra-high field transport in GaN-based heterostructures
by: Vitusevich, S.A., et al.
Published: (2006)
by: Vitusevich, S.A., et al.
Published: (2006)
Резонансно-туннельные диоды на основе нитридов AlN/AlxGa1-xN, GaN/InxGa1-xN
by: Боцула, О.В., et al.
Published: (2008)
by: Боцула, О.В., et al.
Published: (2008)
Влияние протонного облучения на AlGaN/GaN транзисторы c высокой подвижностью электронов
by: Батаев, М., et al.
Published: (2011)
by: Батаев, М., et al.
Published: (2011)
Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions
by: Belyaev, A.E., et al.
Published: (2004)
by: Belyaev, A.E., et al.
Published: (2004)
Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density
by: A. V. Sachenko, et al.
Published: (2012)
by: A. V. Sachenko, et al.
Published: (2012)
Перспективы использования диодов Ганна на основе GaN, AlN и InN
by: Стороженко, И.П., et al.
Published: (2011)
by: Стороженко, И.П., et al.
Published: (2011)
Вольт-амперні характеристики діодів Шотткі на основі гетероструктури графен/n-Si
by: Koziarskyi, Ivan, et al.
Published: (2023)
by: Koziarskyi, Ivan, et al.
Published: (2023)
Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si
by: Red’ko, S.M.
Published: (2015)
by: Red’ko, S.M.
Published: (2015)
MODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS
by: Onikienko, Y. O., et al.
Published: (2020)
by: Onikienko, Y. O., et al.
Published: (2020)
Influence of weak magnetic fields treatment on photoluminescence of GaN:Si
by: S. M. Redko
Published: (2015)
by: S. M. Redko
Published: (2015)
Electrophysical сharacteristics of LEDs based on GaN epitaxial films
by: Oleksenko, P.Ph., et al.
Published: (1998)
by: Oleksenko, P.Ph., et al.
Published: (1998)
Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios
by: Kladko, V.P., et al.
Published: (2014)
by: Kladko, V.P., et al.
Published: (2014)
Investigation of electric and magnetic characteristics of high-temperature hall sensor based on AlGaN/GaN heterostructure
by: V. R. Stempitskij, et al.
Published: (2017)
by: V. R. Stempitskij, et al.
Published: (2017)
Similar Items
-
Schottky-barrier Au–TiBx–n-GaN contacts
by: Ya. Kudryk
Published: (2015) -
On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes
by: Belyaev, A.E., et al.
Published: (2007) -
Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system
by: Konakova, R.V., et al.
Published: (2001) -
Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs
by: Venger, E.F., et al.
Published: (1999) -
Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures
by: Abdizhaliev, S.K., et al.
Published: (2003)