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Резонансно-туннельные диоды на основе нитридов AlN/AlxGa1-xN, GaN/InxGa1-xN

Рассматриваются резонансно-туннельные диоды (РТД) на основе двойных и тройных соединений нитридов AlN, GaN, InN c большим количеством энергетических уровней в квантовых ямах. Расчитаны вольтамперные характеристики резонансно- туннельных диодов с числом уровней в квантовой яме до пя...

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Bibliographic Details
Date:	2008
Main Authors:	Боцула, О.В., Прохоров, Э.Д., Безмаль, И.П.
Format:	Article
Language:	Russian
Published:	Інститут радіофізики і електроніки ім. А.Я. Усикова НАН України 2008
Subjects:	Радиофизика твердого тела и плазмы
Online Access:	https://nasplib.isofts.kiev.ua/handle/123456789/10798
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Journal Title:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:	Резонансно-туннельные диоды на основе нитридов AlN/AlxGa1-xN, GaN/InxGa1-xN / О.В. Боцула, Э.Д. Прохоров, И.П. Безмаль // Радіофізика та електроніка. — 2008. — Т. 13, № 3. — С. 518-522. — Бібліогр.: 6 назв. — рос.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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