The mechanism of current transport in the structure Al-p-CdTe-Mo with different thickness of the base

• Published in: Физическая инженерия поверхности
• Date: 2015
• Main Authors: Mirsagatov, Sh.A., Uteniyazov, A.K.
• Format: Article
• Language: English
• Published: Науковий фізико-технологічний центр МОН та НАН України 2015
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/108760
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: The mechanism of current transport in the structure Al-p-CdTe-Mo with different thickness of the base / Sh.A. Mirsagatov, A.K. Uteniyazov // Физическая инженерия поверхности. — 2015. — Т. 13, № 3. — С. 325-329. — Бібліогр.: 15 назв. — англ.

In this paper the mechanism of current’s transport in the structure Al-p-CdTe-Mo is studied, when the thickness of the base w ≤ 10 μm. The results of study of current-voltage characteristics of the structure Al-p-Cd-Te-Mo with different thicknesses of the base and the influence of the thickness of t...