The mechanism of current transport in the structure Al-p-CdTe-Mo with different thickness of the base
In this paper the mechanism of current’s transport in the structure Al-p-CdTe-Mo is studied, when the thickness of the base w ≤ 10 μm. The results of study of current-voltage characteristics of the structure Al-p-Cd-Te-Mo with different thicknesses of the base and the influence of the thickness of t...
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| Published in: | Физическая инженерия поверхности |
|---|---|
| Date: | 2015 |
| Main Authors: | Mirsagatov, Sh.A., Uteniyazov, A.K. |
| Format: | Article |
| Language: | English |
| Published: |
Науковий фізико-технологічний центр МОН та НАН України
2015
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/108760 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | The mechanism of current transport in the structure Al-p-CdTe-Mo with different thickness of the base / Sh.A. Mirsagatov, A.K. Uteniyazov // Физическая инженерия поверхности. — 2015. — Т. 13, № 3. — С. 325-329. — Бібліогр.: 15 назв. — англ. |
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