Neutron irradiation influence on the silicon voltage limiter parameters
The influence of neutron irradiation on breakdown voltage (Ubd) and limitation voltage (Ulim) is investigated in silicon voltage limiter. The coefficient Kρ is basic radiation parameter, forming dependences Ubd = f (F) and Ulim = f (F), which determines the dependence of basic charge carriers concen...
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| Date: | 2012 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2012
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| Series: | Вопросы атомной науки и техники |
| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/109026 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Neutron irradiation influence on the silicon voltage limiter parameters / A.Z. Rakhmatov, M.Yu. Tashmetov, L.S. Sandler // Вопросы атомной науки и техники. — 2012. — № 5. — С. 81-87. — Бібліогр.: 17 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | The influence of neutron irradiation on breakdown voltage (Ubd) and limitation voltage (Ulim) is investigated in silicon voltage limiter. The coefficient Kρ is basic radiation parameter, forming dependences Ubd = f (F) and Ulim = f (F), which determines the dependence of basic charge carriers concentration in silicon from neutron fluencies. The mechanisms, which form the Ulim value after neutron irradiation are determined. On basis of obtained results analysis is proposed the model, which makes it possible to forecast changes in the breakdown voltage and limitation voltage, which occur as a result the neutron irradiation of voltage limiter. |
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