Electron beam plasma diode with charged particle background
The effect of an immovable charged particle background on the stationary states of a diode with the electron
 beam is studied. An addition of uniform positive charged particles results in an increase in the space-charge limit of
 the electron current as well as in the new branches of...
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| Опубліковано в: : | Вопросы атомной науки и техники |
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| Дата: | 2008 |
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2008
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electron beam plasma diode with charged particle background / A.Ya. Ender, V.I. Kuznetsov, H. Schamel // Вопросы атомной науки и техники. — 2008. — № 4. — С. 26-30. — Бібліогр.: 7назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860087364247879680 |
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| author | Ender, A.Ya. Kuznetsov, V.I. Schamel, H. |
| author_facet | Ender, A.Ya. Kuznetsov, V.I. Schamel, H. |
| citation_txt | Electron beam plasma diode with charged particle background / A.Ya. Ender, V.I. Kuznetsov, H. Schamel // Вопросы атомной науки и техники. — 2008. — № 4. — С. 26-30. — Бібліогр.: 7назв. — англ. |
| collection | DSpace DC |
| container_title | Вопросы атомной науки и техники |
| description | The effect of an immovable charged particle background on the stationary states of a diode with the electron
beam is studied. An addition of uniform positive charged particles results in an increase in the space-charge limit of
the electron current as well as in the new branches of equilibria arising. On the other hand, extra negative charged
particles result in a strong decrease in current cut-off limit, the cut-off being the total one. This effect can be used to
perform the fast switches.
Вивчається вплив ефекту оточення нерухомими зарядженими частинками на стаціонарні стани діода з
електронним пучком. Доповнення однорідних позитивних заряджених частинок приводить до збільшення
граничного обмеженого просторовим зарядом струму електронів, а також до виникнення нових областей
рівноваги. З іншого боку, надлишок негативних заряджених частинок призводить до сильного зменшення
граничного струму, а також загального струму. Цей ефект можна застосувати для створення швидких
перемикачів.
Изучается влияние эффекта окружения неподвижными заряженными частицами на стационарные
состояния диода с электронным пучком. Дополнение однородных положительных заряженных частиц
приводит к увеличению предельного ограниченного пространственным зарядом тока электронов, а также к
возникновению новых областей равновесия. С другой стороны, избыток отрицательно заряженных частиц
приводит к сильному уменьшению предельного тока, а также общего тока. Этот эффект можно использовать
для создания быстрых переключателей.
|
| first_indexed | 2025-12-07T17:20:44Z |
| format | Article |
| fulltext |
НЕРЕЛЯТИВИСТСКАЯ ЭЛЕКТРОНИКА
ELECTRON BEAM PLASMA DIODE WITH CHARGED
PARTICLE BACKGROUND
A.Ya. Ender1, V.I. Kuznetsov1, and H. Schamel2
1Ioffe Physical-Technical Institute, St. Petersburg, Russia;
2Physikalisches Institut, Universitat Bayreuth, Bayreuth, Germany
E-mail: Victor.Kuznetsov@mail.ioffe.ru
The effect of an immovable charged particle background on the stationary states of a diode with the electron
beam is studied. An addition of uniform positive charged particles results in an increase in the space-charge limit of
the electron current as well as in the new branches of equilibria arising. On the other hand, extra negative charged
particles result in a strong decrease in current cut-off limit, the cut-off being the total one. This effect can be used to
perform the fast switches.
PACS: 52.35.Hr
1. INTRODUCTION
90 years ago it was revealed an effect of a sharp
current cut-off in the diode. Bursian explained this
phenomenon assuming that, in such a diode, two
stationary states with the clearly different current levels
can exist simultaneously in the given range of the
external parameters and, with an excess of the electron
beam over certain threshold value of , named the
space-charge limit (SCL) current, retained are only the
solution with current’s restriction [1].
SCLj
Fig.1. Emitter electric field 0ε as a function of the
diode length δ for the Bursian diode drawn for three
values of the voltages V: curve I corresponds to 0=V ,
II to 0.2, III to -0.4. Normal C branch is marked by
number 1, overlap C branch – 2, B branch – 3
In Fig.1, an example of )(0 δε for three values of an
external voltage V is given (here WeE D 2/0 λε = ,
Dd λδ /= and are the dimensionless
emitter electric field, diode length and external voltage,
respectively; the beam energy and Debye length
WeV =
_______________________________________________________________
ВОПРОСЫ АТОМНОЙ НАУКИ И ТЕХНИКИ. 2008. № 4.
Серия: Плазменная электроника и новые методы ускорения (6), с.26-30. 26
C 2/Φ
2/)( 20
evmW = , , (1) 2/102 )]2/([ eD neW πλ =
are chosen as units of energy and length with , ,
being the beam density, velocity). The normal C branch
corresponds to a regime with a total current, and the B
branch corresponds to a regime with current’s
restriction, when, in the diode gap, a potential barrier
arises (named a virtual cathode), which reflects a part of
the electron flow on the emitter backwards. Each curve
0
en 0
ev
)(0 δε has two bifurcation points: SCL point, which
determinates a limit current of the Bursian diode, and
BF point, which corresponds to Child-Langmuir current.
The properties of the Bursian diode are investigated in
details in a number of works, see Refs. [2]-[5], and
references cited therein. For coordinates of the SCL
point, the explicit form is obtained [3]:
3/2
1/2
0,
( ) ( 2 / 3)(1 1 2 ) ,
( ) 2(1 1 2 ) .
SCL
SCL
V V
V V
δ
ε −
= + +
= + +
(2)
In this paper, an effect of the background of charged
particles on characteristics of the electron beam diode is
studied. It may be, e.g., a flow of extra particles injected
in parallel along the electrodes or a dust plasma.
2. UNIFORM POSITIVE ION
BACKGROUND
In Ref. [6], an effect of uniform background of
positive ions on characteristics of the electron beam
diode was studied. As a quantitative parameters of an
ion background, it is used a nonneutrality parameter γ
defined by
0
e
bg
i nn=γ , (3)
a value of γ being the same as the parameters of the
electron beam are varied. Fig.2 shows in what manner
the Bursian branch (C branch) develops with an increase
in γ . One can see that the presence of the ions permits
to increase substantially SCLδ . As , it makes
feasible to say about sensitivity of the true SCL current
to an increase in
2~)( δδj
γ . On the other hand, a BF point
location is weakly dependent on γ value, and the Child-
Langmuir current, defined by the BF point, remains
almost the same.
Follow the change in C branch when increasing a
nonneutrality parameter from 0 to 1, one can see that the
Bursian branch ( 0=γ ) transforms continuously into a
similar branch of the Pierce diode ( 1=γ ), a bifurcation
point )0(SCLδ being transforming into a bifurcation
point )1(SCLδ . With an increase in current (an increase
in a parameter δ ), when reaching SCL point, there is an
mailto:Victor.Kuznetsov@mail.ioffe.ru
aperiodical instability in the diode and, as a result, a
plasma is transforming into a state of electron reflection,
strongly different from the initial one. Such scenario
does not depend on γ . Thus, one can deduce that the
Bursian and Pierce instabilities are the special cases the
same aperiodical instability being inherent for the
electron beam plasma diode.
27
Fig.2. Emitter electric field 0ε as a function of the
diode length δ for three values of =γ 0.001, 0.5, and
0.99. The diode voltage is . For each curve,
closed circles indicate the SCL critical state, whereas
open circles indicate the BF state
0=V
There are no stationary solutions with 00 <ε at
in the Bursian diode (0≤V 0=γ ). However, when
0>γ , such solutions exist. It results in arising the new
branches which are shown in Fig.3 for a series of V ,
where a region on a plane },{ 0 δε corresponding to
is presented. 2/32 −≤ πγδ
Fig.3. Manifold of equilibrium curves )(0 δε for =γ 0.9
drawn for different values of the collector potential V.
Curve 1 corresponds to V =-0.3, 2 to –0.1, 3 to 0, 4 to
0.1, 5 to 0.2, 6 to ≡= crVV 0.2469, 7 to 0.3, 8 to 0.7,
and 9 to 1.2
One can see that it is separated in four fields by the
bold solid lines which correspond to a voltage being
equal to a critical value of )(γcrV . At , there are
only C (Bursian) and
crVV <
C branches (the upper-left and
lower-right corners, respectively). For each voltage, the
C branch transforms into a relevant C branch if the
first is rotated by 180º relative to a point ( ). In
lower-left and upper-right corners, there are two new
branches – E and
2/3,0 −πγ
E corresponding to , the
solutions with a single maximum on the potential
distribution corresponding to the E branch, and all these
solutions are stable. A critical value of V determining
the boundaries of the sectors (two bold curves) is
determined via a formula
crVV >
22(1 ) .crV γ γ −= − (4)
At 1=γ 0=crV , and at 0→γ (a transform to the
Bursian diode) ∞→crV . The bifurcation points (BF
and SCL) exist only at , i.e., on C and crVV < C
branches.
The coordinates of SCL point are determined via the
formulas
1/2 1/2
0, ( 1 2 1) ,SCL V V Vε γ −= + − − (5)
0,3/ 2
0,
2
0, 0,
arcsin , ,
arcsin , 2 ,
2 / ( ).
SCL
SCL
SCL
SCL SCL
y y
y y y
y y
π ε
γ δ
γ
ε γ
ε γ ε
⎧ − − ≤⎪= ⎨
− < ≤ −⎪⎩
≡ +
(6)
At 0→γ , Eqs (5) and (6) transform into Eqs (2).
At value of V fixed, a value of )(γδ SCL increases
with increase in γ (see, Fig.2). Hence, an addition of
the ion background results in an increase in the limit
Pierce current density. Each value of V a critical value
of γ is corresponded, also, being consequence of
existence for every
crV
γ . Upper limit in and SCLj SCLδ
can be found from Eqs (5) and (6), with substituting the
critical value of γ determined from
1( 1 2 1) .cr V Vγ −= + − (7)
From the very fact that there are new stable E
branches at 0>γ , it follows the very important
conclusion: in the stationary regime, the currents above
the limit Pierce current corresponding to the well-
known Pierce threshold )(γδ SCL , can pass. At any
0≠γ , one can continuously increase δ (hence, an
electron beam current density), practically, with no
restrictions when taking . crVV >
Above, it is supposed that a parameter γ (see,
Eq.(3)) is a constant. Of interest is to consider a diode
when the density of the background charge is fixed and
the electron beam density is varied. The solutions for a
problem with the constant ion background can be easily
found, having a lot of calculations at different fixed γ
values.
Nevertheless, take the equations describing the
steady states of a diode with constant background
charge. Those are the equations of continuity, of
electron motion, and the Poisson’s:
])([4)(
),()()()(
,)1()()(
2
2
00
bg
inznez
dz
d
z
dz
d
m
ezv
dz
dzvzv
dt
d
vnrzvzn
−=Φ
Φ−==
+=
π
(8)
and boundary conditions are
.)(,0)0(
,)0(,)0( 00
Cd
nnvv
Φ=Φ=Φ
==
(9)
In Eqs. (8) and (9) parameter r is a coefficient of
electron reflection from a virtual cathode. When
considering the steady state in a regime with electron
reflection, the problem is as follows: both electron flows
– direct and backward – are supplied from the emitter
with the weights 1 and r, i.e., the electron flow with a
weight 1+r “leaves” the emitter and, to the right of the
virtual cathode, an electron flow of a weight 1-r arises.
Rewrite a parameter as bg
in
0
*
0
0 0* 2
0 0
, ,
bg bg
bg i i
i i
n n n
n n n
nn n
κ
α α κ
δ
≡ = = =
28
* .i (10)
Here is an emitter electron beam density for a diode
with no background particles at the SCL point. Now, in
the problem under consideration in the dimensionless
form, a problem (8) and (9) is of the same form as the
previous one with
*
0n
γ fixed, but, everywhere, γ is
substituted by α . Contrary to γ , a parameter α
depends on a dimensionless diode length δ , so, the
main parameters of the problem ( 0ε , minimum
potential mη and its position mζ , and so on) can be
found only with calculating the potential distribution
over the entire diode.
0.8 1.2 1.6 2.0 2.4δ
0.0
0.4
0.8
1.2
ε0
I
II
III
α=0.866
0.590
1.0
1.0 1.0
0.840
0.940
1.0
1.0
Fig.4. Emitter electric field 0ε as a function of the
diode length δ drawn for three values of iκ =1.1
(curve I), 3.3 (II), and 5.5 (III). The diode voltage is
. For each curve, 0=V α values are shown for three
points
Fig.4 represents dependency 0ε on δ for a diode
with for a regime with no electron reflection for
three
0=V
iκ values. The branches obtained correspond to C
branch for 1≤γ (see, e.g., curve 3 in Fig.3). Consider,
for clarity, curve I. At SCL point, 590.0=α , and, with
δ decreasing, this parameter increases: on the upper
branch, up to 0.866 at BF point, on the lower branch –
up to 1.0 corresponding to 00 =ε .
3. UNIFORM ELECTRON BACKGROUND
When studying an effect of the electron background
on the characteristics of an electron beam diode, first,
evaluate the values of a series of the parameters at the
SCL point for short-circuit diode by a concrete example:
a voltage forming the beam, =1V, and a diode length
=1mm. Then for minimum potential , beam
velocity , density , and current density
we obtain
*V
*d *
mΦ
*
0v *
0n *
0
*
0
*
0 venj =
* * 7
0
* 11 * 3
0 03 2
0.75 , 5.9289 10 ,
s
3.1438 10 , 1.8639 10 .
m
cmV v
K Aen j
cm cm
− −
Φ = − = ⋅
= ⋅ = ⋅
(11)
A total charge in a gap relative to the units of a length
and square of the electrode for the SCL point equals
*
0 0
* * * *
0* * *
0
11 3
1 3( )
2
4.7157 10 / . .
d
dQ e dzn z en v t en
d d d
C cm−
= = =
= ⋅
∫ = (12)
For the background electrons would affect the diode
states, their total charge should be of the order of
Eq. (12).
*/ dQ
When studying the steady state, as in the case of the
ion background, Eq. (10), represent the electron
background density as a form
02 .bg e
en n
κ
0nβ
δ
= = (13)
A coefficient eκ , determining the background electron
density, is related with via . bg
en *
0)16/9( nn e
bg
e κ=
If the beam electrons are absent, it is maintained the
potential distribution ,
which minimum potential
locates at the center of a diode space and its
dimensionless value
zzdnez e )()8/9()( *
0 −−=Φ κπ
2*
0)32/9( dne em κπ−=Φ
em κη )8/1(−= , in the diode. For
the Bursian diode with no background at
the SCL point. corresponds to such value of
8/3* −=
m
η
3=eκ
mη . When 2/1−=mη , an electron beam, left the
emitter with the energy , stops at the point
, and corresponds to this case. Thus, an
essential effect of the background is expected at a
parameter
2/)( 2*
0vm
mz 4=eκ
eκ within 3 and 4.
Now, involve an electron beam of fixed energy
from the emitter in the vacuum diode with
background electrons. Depending on a relation between
the beam and background density, there are different
regimes within the gap: an entire beam reaches the
collector or a portion of electrons (as well as total ones)
is reflected by potential barrier and backwards the
emitter, resulting in a current cut-off.
**
0 eVW =
A system of equations in the case under
consideration coincides with Eq. (8) when substituting
α by β− . Performing similarly to that as in [2] and [7]
this system can be transposed to a single ordinary
differential equation of the 3rd order:
2
2 1 .d d r
d d
ζ βζ
τ τ
⎛ ⎞
− = +⎜ ⎟
⎝ ⎠
(14)
Here τ is a time-of-flight of an electron from the
emitter to a point ζ . Integrating Eq. (14) with relevant
boundary conditions, one can calculate potential
distributions and build up dependencies the emitter
electric field 0ε and a convective current at the
collector j on a diode length δ .
In the regime with no electron reflection we obtain
an equation for a relation 0ε with δ
3 / 2
0
0
2 2
0
1 | |
( | |) ln
1
2( 1) ( 1) .
w
w w
δ
δ
δ
29
,
β ε β
β δ β ε ε
βε β
ε ε β
+ +
= + −
− +
= − + − + −
(15)
Неге . In the regime with partial
electron reflection (0<r<1) an equation relating
2/1)21( Vw +=
0ε with
δ has a form
3/ 2
3/ 2 0
0
2
0
1 | |
( ) | | (1 ) ln
1
1
(1 ) ln ,
1
2(1 ) , 2(1 ) .
r
r
r w
r
r
r
r
r
r r w w
δ
δ
δ
,
β ε β
β δ ζ β ε
βε β
β ζ βε
ε β ε β
− + +
− = − −
−
+ + +
= − +
+
= + + = − − +
(16)
Here rζ is a position of a reflection point.
And at last for the regime with total electron
reflection for the reflection point and for a potential
distribution to the right of this point we obtain:
3/ 2 0
0
2
0
2
( ) 2 ln
2
4 ,
r r
r
r
,
βε β
β ζ β ε ε
βε
ε ε β
+ +
= − −
+
= − −
(17)
21 1( ) ( ) ( )
2 2r r rη ζ ε ζ ζ β ζ ζ= − − − + − . (18)
Then, in a regime with a total reflection, we have a
relation 0ε with δ as follows
1 2 2( )r r r w .δ ζ β ε ε β−= + + + (19)
Now, with the background electrons, the solutions
with the virtual cathode, giving the solutions with the
total reflection within a gap at , can exist. At
the potential minimum point, we have
2/1−<V
)1(
2
1, 211
rmrrm εβηεβζζ −− +−=+= . (20)
Using the obtained formulas, the dependencies 0ε
on δ were built up for a number of a background
density eκ values. Fig.5 demonstrates a background
electron density effect on the curves )(0 δε .
0.4 0.8 1.2
δ
0.0
2.0
4.0
ε 0
1
2
3
4
Fig.5. Emitter electric field 0ε as a function of the
diode length δ drawn for four values of 0=eκ (curve 1),
1 (2), 2.3 (3) and 3 (4). The diode voltage is 0=V
As for the conventional Bursian diode, for a diode
with a background, these curves show two bifurcation
points – SCL and BF. A density of background
electrons affects strongly the locations of these points.
With an increase in a background density, the
bifurcation points shifts to the lower δ , facilitating
their using as the memory elements in the information
technology.
0.0 0.5 1.0 1.5 2.0
δ2
0.0
0.5
1.0
1.5
2.0
δ2
1
1
2
2
3
3
4
4
(1
-r
)
Fig.6. Collector convection current as a function of the
beam current diode length δ drawn for 4th values
of eκ . Parameters are the same as in Fig.5
Fig.6 shows in what manner the changes in a
dependence of the passing current on the beam current
occur. An important point of the background electron
diode is that a current cut-off in such a diode can be as
low as zero (see, i.e., curve 4).
0.2 0.3 0.4 0.5 0.6 0
δ
.7
3.0
4.0
5.0
6.0
ε o
SCL
II
III
BF
IA
B
C
D
Fig.7. Emitter electric field 0ε as a function of the
diode length δ for 3=eκ drawn for three values of
0=V (curve I), 0.1 (II), and -0.1 (III). Dashed curves
correspond to the regime with total reflection, and star
indicates left boundary of such region
The dependencies 0ε on δ are presented in Fig.7,
for a diode with the background electrons with 3=eκ
drawn for three values of the external voltage V. Here,
using points A – D and a vertical line drawn through
them, an example is shown for presentation of the
manner in which a device can be realized with a fast
current switches to zero level and vice versa using a
series of short voltage pulses. An initial state lies on a
curve I corresponding to an external voltage 0=V at a
point A. A flowing current Ajj = . When supplying a
short negative voltage pulse , the diode turns
out to be, initially, on a curve III at a point B where
, then, it returns to a curve I but, at a point C,
corresponding to a regime of total reflection. Now, if a
short positive voltage pulse is supplied, the
system is transferred, first, to a curve II at a point D,
where , and, at last, it turns out to be on a curve I
again, at a point A. Emphasize that the duration of the
control pulses can be only several time-of-flights of an
electron via the diode gap.
1.0−=ΔV
0=j
1.0+=ΔV
Ajj =
30
This work was supported in part by the Russian
Fund of Basic Researches under Grant № 06-08-01104.
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Статья поступила в редакцию 08.05.2008 г.
ЭЛЕКТРОННЫЙ ПУЧОК ПЛАЗМЕННОГО ДИОДА, ОКРУЖЕННЫЙ ЗАРЯЖЕННЫМИ
ЧАСТИЦАМИ
А.Я. Эндер, В.И. Кузнецов, Х. Шамель
Изучается влияние эффекта окружения неподвижными заряженными частицами на стационарные
состояния диода с электронным пучком. Дополнение однородных положительных заряженных частиц
приводит к увеличению предельного ограниченного пространственным зарядом тока электронов, а также к
возникновению новых областей равновесия. С другой стороны, избыток отрицательно заряженных частиц
приводит к сильному уменьшению предельного тока, а также общего тока. Этот эффект можно использовать
для создания быстрых переключателей.
ЕЛЕКТРОННИЙ ПУЧОК ПЛАЗМОВОГО ДІОДА, ЩО ОТОЧЕНИЙ ЗАРЯДЖЕНИМИ
ЧАСТИНКАМИ
А.Я. Ендер, В.І. Кузнецов, Х. Шамель
Вивчається вплив ефекту оточення нерухомими зарядженими частинками на стаціонарні стани діода з
електронним пучком. Доповнення однорідних позитивних заряджених частинок приводить до збільшення
граничного обмеженого просторовим зарядом струму електронів, а також до виникнення нових областей
рівноваги. З іншого боку, надлишок негативних заряджених частинок призводить до сильного зменшення
граничного струму, а також загального струму. Цей ефект можна застосувати для створення швидких
перемикачів.
PARTICLE BACKGROUND
|
| id | nasplib_isofts_kiev_ua-123456789-110308 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1562-6016 |
| language | English |
| last_indexed | 2025-12-07T17:20:44Z |
| publishDate | 2008 |
| publisher | Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| record_format | dspace |
| spelling | Ender, A.Ya. Kuznetsov, V.I. Schamel, H. 2017-01-03T11:40:39Z 2017-01-03T11:40:39Z 2008 Electron beam plasma diode with charged particle background / A.Ya. Ender, V.I. Kuznetsov, H. Schamel // Вопросы атомной науки и техники. — 2008. — № 4. — С. 26-30. — Бібліогр.: 7назв. — англ. 1562-6016 PACS: 52.35.Hr https://nasplib.isofts.kiev.ua/handle/123456789/110308 The effect of an immovable charged particle background on the stationary states of a diode with the electron
 beam is studied. An addition of uniform positive charged particles results in an increase in the space-charge limit of
 the electron current as well as in the new branches of equilibria arising. On the other hand, extra negative charged
 particles result in a strong decrease in current cut-off limit, the cut-off being the total one. This effect can be used to
 perform the fast switches. Вивчається вплив ефекту оточення нерухомими зарядженими частинками на стаціонарні стани діода з
 електронним пучком. Доповнення однорідних позитивних заряджених частинок приводить до збільшення
 граничного обмеженого просторовим зарядом струму електронів, а також до виникнення нових областей
 рівноваги. З іншого боку, надлишок негативних заряджених частинок призводить до сильного зменшення
 граничного струму, а також загального струму. Цей ефект можна застосувати для створення швидких
 перемикачів. Изучается влияние эффекта окружения неподвижными заряженными частицами на стационарные
 состояния диода с электронным пучком. Дополнение однородных положительных заряженных частиц
 приводит к увеличению предельного ограниченного пространственным зарядом тока электронов, а также к
 возникновению новых областей равновесия. С другой стороны, избыток отрицательно заряженных частиц
 приводит к сильному уменьшению предельного тока, а также общего тока. Этот эффект можно использовать
 для создания быстрых переключателей. This work was supported in part by the Russian
 Fund of Basic Researches under Grant № 06-08-01104. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Нерелятивистская электроника Electron beam plasma diode with charged particle background Електронний пучок плазмового діода, що оточений зарядженими частинками Электронный пучок плазменного диода, окруженный заряженными частицами Article published earlier |
| spellingShingle | Electron beam plasma diode with charged particle background Ender, A.Ya. Kuznetsov, V.I. Schamel, H. Нерелятивистская электроника |
| title | Electron beam plasma diode with charged particle background |
| title_alt | Електронний пучок плазмового діода, що оточений зарядженими частинками Электронный пучок плазменного диода, окруженный заряженными частицами |
| title_full | Electron beam plasma diode with charged particle background |
| title_fullStr | Electron beam plasma diode with charged particle background |
| title_full_unstemmed | Electron beam plasma diode with charged particle background |
| title_short | Electron beam plasma diode with charged particle background |
| title_sort | electron beam plasma diode with charged particle background |
| topic | Нерелятивистская электроника |
| topic_facet | Нерелятивистская электроника |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/110308 |
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