Deposition of refractory metal films with planar plasma ECR source
The condition of the deposition of refractory metal and alloy films such as W, Mo, Ti, Ta, Cr, Ni, Fe₈₀B₂₀ with using ECR plasma source at the different magnitudes of bias voltage on targets and substrates were investigated. It was revealed that the maximal rate of the films growth amounted to 0,052...
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| Published in: | Вопросы атомной науки и техники |
|---|---|
| Date: | 2007 |
| Main Authors: | Fedorchenko, V.D., Chebotarev, V.V., Medvedev, A.V., Tereshin, V.I. |
| Format: | Article |
| Language: | English |
| Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2007
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/110576 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Deposition of refractory metal films with planar plasma ECR source/ V.D. Fedorchenko, V.V. Chebotarev, A.V. Medvedev, V.I. Tereshin // Вопросы атомной науки и техники. — 2007. — № 1. — С. 164-166. — Бібліогр.: 7 назв. — англ. |
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