Structure changes in InP and GaAs crystals double irradiated with electrons and swift heavy ions

We have studied InP and GaAs crystal structure changes under the influence of swift Kr and Bi ions irradiation by means of scanning electron microscopy, atomic force microscopy and selective chemical etching. The previous disordering of samples by electron irradiation is shown to be leading to macro...

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Veröffentlicht in:Вопросы атомной науки и техники
Datum:2007
Hauptverfasser: Didyk, A., Komarov, F., Vlasukova, L., Yuvchenko, V., Bogatyrev, Y., Korshunov, F., Gracheva, E.
Format: Artikel
Sprache:English
Veröffentlicht: Лабораторія ядерних реакцій Росії 2007
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/110598
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Structure changes in InP and GaAs crystals double irradiated with electrons and swift heavy ions / A. Didyk, F. Komarov, L. Vlasukova, V. Yuvchenko, Y. Bogatyrev, F. Korshunov, E. Gracheva // Вопросы атомной науки и техники. — 2007. — № 6. — С. 9-12. — Бібліогр.: 11 назв. — англ.

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