Tem investigation of CuInSe₂-ZnSe heterostructures for thin film solar cells
In the article, CuInSe₂ thin films obtained by sequential deposition of Cu and indium selenide starting layer with the further annealing of the two-layered composition in Se atmosphere were investigated by transmission electron microscopy (TEM). On the base of the obtained basic CuInSe₂ layers, the...
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2008
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| Zitieren: | Tem investigation of CuInSe₂-ZnSe heterostructures for thin film solar cells / S.N. Grigorov, V.M. Kosevich, S.M. Kosmachev, A.V. Taran // Вопросы атомной науки и техники. — 2008. — № 1. — С. 93-95. — Бібліогр.: 3 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1859766799988424704 |
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| author | Grigorov, S.N. Kosevich, V.M. Kosmachev, S.M. Taran, A.V. |
| author_facet | Grigorov, S.N. Kosevich, V.M. Kosmachev, S.M. Taran, A.V. |
| citation_txt | Tem investigation of CuInSe₂-ZnSe heterostructures for thin film solar cells / S.N. Grigorov, V.M. Kosevich, S.M. Kosmachev, A.V. Taran // Вопросы атомной науки и техники. — 2008. — № 1. — С. 93-95. — Бібліогр.: 3 назв. — англ. |
| collection | DSpace DC |
| container_title | Вопросы атомной науки и техники |
| description | In the article, CuInSe₂ thin films obtained by sequential deposition of Cu and indium selenide starting layer with the further annealing of the two-layered composition in Se atmosphere were investigated by transmission electron microscopy (TEM). On the base of the obtained basic CuInSe₂ layers, the ZnSe buffer layers were grown. It was found that ZnSe layer of cubic modification grow epitaxialy on a surface of CuInSe₂.
Проведено електронно-мікроскопічне дослідження тонких плівок CuInSe₂, виготовлених засобом послідовного осадження у вакуумі селеніду індію й міді з наступним відпалом двошарової композиції в атмосфері селену. На основі отриманих плівок CuInSe₂, були вирощені буферні шари ZnSe. Встановлено, що шар ZnSe кубічної модифікації зростає епітаксійно на поверхні плівки CuInSe₂.
Проведено электронно-микроскопическое исследование тонких плёнок CuInSe₂, приготовленных методом последовательного осаждения в вакууме селенида индия и меди с последующим отжигом двухслойной композиции в атмосфере селена. На основе полученных плёнок CuInSe₂ были выращены буферные слои ZnSe. Установлено, что слой ZnSe кубической модификации растёт эпитаксиально на поверхности плёнки CuInSe₂.
|
| first_indexed | 2025-12-02T05:30:08Z |
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UDC 539.219.3
TEM INVESTIGATION OF CuInSe2-ZnSe HETEROSTRUCTURES
FOR THIN FILM SOLAR CELLS
S.N. Grigorov, V.M. Kosevich, S.M. Kosmachev, A.V. Taran
National Technical University “Kharkov Politecnical Institute”,
21, Frunze st., Kharkov, 61002, Ukraine; E-mail: ataran@kpi.kharkov.ua
In the article, CuInSe2 thin films obtained by sequential deposition of Cu and indium selenide starting layer with
the further annealing of the two-layered composition in Se atmosphere were investigated by transmission electron
microscopy (TEM). On the base of the obtained basic CuInSe2 layers, the ZnSe buffer layers were grown. It was
found that ZnSe layer of cubic modification grow epitaxialy on a surface of CuInSe2.
INTRODUCTION
CuInSe2 (CIS) and ZnSe compounds are the
promising candidates for basic and buffer layers for
highly efficient thin film solar cells [1, 2]. The aim
of the present contribution was to study a possibility
of syntheses of large-crystalline CuInSe2 thin films
by activating solid-phase reactions in the two-
layered In2Se3-Cu film composition with the
following formation on their base CuInSe2-ZnSe
heterosystems.
The interest to zinc selenide films (ZnSe) is to
find an alternative to cadmium sulfide (CdS)
compound, which at present is usually utilized as a
buffer layer in solar cells based on CuInSe2(СIS)
absorbers as well as in other chalcopyrite
semiconductors of А1В111ХVI type. Moreover, the
motivation for searching an alternative to CdS
buffer layer is in toxicity of cadmium containing
material, which restrains its broad utilization.
Besides that, ZnSe buffer layer is more
advantageous in contrast with CdS one. For
instance, forbidden gap (Eg = 2.67 eV) for ZnSe is
wider in comparison with the (Еg = 2.42 eV) for
CdS. This allows transmitting the high-energy
photons from blue area of solar spectrum. Secondly,
the crystalline lattice of ZnSe correlates well with
crystalline lattice of absorber from А1В111ХVI
,
instead of CdS compound.
1. EXPERIMENTAL
In a present activity, the CuInSe2-ZnSe thin films
were deposited in a standard vacuum installation
under 5·10-3 Pa on glass-ceramic substrates.
The CuInSe2 basic layers were prepared using
sequential deposition of indium selenide and copper
with the following annealing of the two-layered
composition in a Se atmosphere (selenization) [3].
For the deposition of CIS, two schemes were
applied (Fig.1,а,b). In one case, indium selenide was
deposited using two-stage scheme: In2Se3 (substrate
temperature Тsub=250 oC) + Se (Тsub=350 oC) +
In2Se3 (Тsub=500 oC) + Se (Тsub =550 oC). In the other
case, indium selenide was condensed in one turn at
the temperature of 300oC without additional
selenization. For the preparation of indium selenide
films a powder of In2Se3 at purity 99,999% and
tablets of selenium (purity 99,9999%) were used.
Indium selenide and selenium were evaporated from
alundum crucibles.
To achieve effusion evaporation of selenium, a
crucible with selenium tablets was closed with a
tantalum cap with a small hole.
Copper (purity 99,999%) was deposited onto
In(Se) layer at Тsub =200 oС in the first case and at
Тsub=300 oC in the second case. Next, the two-layer
In2Se3-Cu composition was selenized under
Тsub=550 оС. Zink selenide was evaporated from
molybdenum boat and was deposited on surfaces of
two-layered In2Se3-Cu film at Тsub=350, 450, 500 oC
and Тsub=550 oC.
The structure and phase composition of the
obtained samples were examined with the help of
transmission electron microscopy.
2. RESULTS AND DISCUSSION
A typical structure and micro-diffraction pattern
of the CuInSe2 thin films deposited using two
deposition sequences are presented in Fig.2. It was
revealed that in both cases the large-crystalline grains
of 1 μm in size were formed.
However, in CIS films, whereas the starting In2Se3
layer was deposited in two steps, the crystallites had
more perfect structure (Fig.2,а), than in CIS films
grown with a single In2Se3 layer (Fig.2,b). In CIS
films of the second type the grains contained micro-
twins. Besides that, we revealed some isles of the
Cu2-xSe phase on the surface of these films.
Obviously, the thickness of the Cu layer turned to be
larger than it was required for the formation of CIS
with stoichiometris composition.
ВОПРОСЫ АТОМНОЙ НАУКИ И ТЕХНИКИ. 2008. № 1.
Серия: Вакуум, чистые материалы, сверхпроводники (17), с.93 – 95.
93
mailto:sngrigorov@kpi.kharkov.ua
a b
Fig.1. Crystal growth of CuInSe2-ZnSe heterostructures
a b
Fig.2. TEM images and microdiffraction patterns of CuInSe2 thin films,
obtained using different deposition sequences
The Fig.3 presents an electron-microscopic
image and microdiffraction pattern of the
CuInSe2-ZnSe heterostructure deposited by a
method depicted in Fig.1,а. The moiré contrast was
observed from (220) planes of CIS and ZnSe
phases. This is an evidence of epitaxial grows of
ZnSe on a surface of copper and indium deselenide
film.
The moiré period of DM=100 Ǻ correlates well
with the period (DM = 102 Ǻ), calculated for
parallel orientation of (220) type planes of CIS and
cubic ZnSe. The distortion of the moiré picture
indicated the fact that zinc selenide film has a
blocked structure with the blocks of ~0,1 μm in
size. Such a structure is formed at growing ZnSe
on island mechanizm.
The Fig.4 presents an electronic-microscopic
images and microdiffraction patterns of
CuInSe2-ZnSe heterostructures produced on
scheme Fig.1,b.
In all cases on a surface of CIS film, a
polycrystalline ZnSe film of cubic modification
was grown. The ZnSe thin film was formed due to
existence of cooper selenide islands on a surface
of CIS grains. The grain size in ZnSe films
increases from ~20 nm with the temperature
increase to Тsub=350 oС and to about 100 nm at
Тsub=550 oС. Some ZnSe crystallites contained
twinned lamellas.
Fig.3. TEM image and microdiffraction pattern of the
CuInSe2-ZnSe heterostructure deposited by a method
depicted in Fig.1а
ВОПРОСЫ АТОМНОЙ НАУКИ И ТЕХНИКИ. 2008. № 1.
Серия: Вакуум, чистые материалы, сверхпроводники (17), с.93 – 95.
0,1
μm
(220)
ZnSe
(220) CIS
(111)
ZnSe
(220)
CIS
(220)
ZnSe
0,1 μm
94
μm0,1
(220)
CIS
(112)
CIS
0,1 μm
(220)
Cu
2-x
Se
CIS
Glassceramic
In
2
Se
3
(250oC)
In
2
Se
3
(350oC)
Cu (200oC)
ZnSe (500oC) + Se (550o)
+ Se (550o)
+ Se (350o)
Glassceramic
In
2
Se
3
(300oC)
Cu (300oC)
ZnSe (350oC,450oC, 550oC) + Se (550o)
Fig.4. TEM image and microdiffraction patterns of
CIS-ZnSe heterostructures produced on scheme Fig.1b
CONCLUSIONS
The phase composition and structure of CuInSe2 and
CuInSe2-ZnSe films were investigated by transmission
electron microscopy. It was revealed, that CuInSe2
films formed on the base of two-layer composition of
In2Se3-Cu were large-crystalline with the grain size of
~1 μm. The typical defects of the CuInSe2 crystallites
are microtwins. Zinc selenide of cubic modification
grow on the surface of CIS films in epitaxial orientation
at Tsub = 500 oC.
The ZnSe films are formed on island mechanism
and have a block structure. The size of blocks was
0,1 μm. A polycrystalline zinc selenide film of cubic
modification grow on a surface of CuInSe2 thin films
contained some isles of the Cu2-xSe phase under the
substrate temperatures of Тsub=350, 450 and 550 oC. A
principle possibility of formation of CuInSe2-ZnSe
heterostructure in one in-line vacuum process was
shown.
REFERENCES
1. S. Zweigart et al // J.Sol. Energy Mat and Solar
Cells. 1996, v.42, p. 219-229.
2. F. Engelhardt et al. // Proc. 2nd World Conf., Vienna,
Austria. 1998, p. 1153-1155.
3. S. N. Grigorov et al. // Proc. XIY Int. Conf., Kharkov,
Ukraine. 2002, p. 169-171.
ЭЛЕКТРОННО-МИКРОСКОПИЧЕСКОЕ ИССЛЕДОВАНИЕ ГЕТЕРОСИСТЕМЫ
CuInSe2-ZnSe ДЛЯ ТОНКОПЛЁНОЧНЫХ СОЛНЕЧНЫХ ЭЛЕМЕНТОВ
С.Н. Григоров, В.М. Косевич, С.М. Космачев, А.В. Таран
Проведено электронно-микроскопическое исследование тонких плёнок CuInSe2, приготовленных
методом последовательного осаждения в вакууме селенида индия и меди с последующим отжигом
двухслойной композиции в атмосфере селена. На основе полученных плёнок CuInSe2 были выращены
буферные слои ZnSe. Установлено, что слой ZnSe кубической модификации растёт эпитаксиально на
поверхности плёнки CuInSe2.
ЕЛЕКТРОННО-МІКРОСКОПІЧНЕ ДОСЛІДЖЕННЯ ГЕТЕРОСИСТЕМИ
CuInSe2-ZnSe ДЛЯ ТОНКОПЛІВКОВИХ СОНЯЧНИХ ЕЛЕМЕНТІВ
С.Н. Григоров, В.М. Косевич, С.М. Космачев, А.В. Таран
Проведено електронно-мікроскопічне дослідження тонких плівок CuInSe2, виготовлених засобом
послідовного осадження у вакуумі селеніду індію й міді з наступним відпалом двошарової композиції в
атмосфері селену. На основі отриманих плівок CuInSe2, були вирощені буферні шари ZnSe. Встановлено, що
шар ZnSe кубічної модифікації зростає епітаксійно на поверхні плівки CuInSe2.
ВОПРОСЫ АТОМНОЙ НАУКИ И ТЕХНИКИ. 2008. № 1.
Серия: Вакуум, чистые материалы, сверхпроводники (17), с.93 – 95.
95
Электронно-микроскопическое исследование гетеросистемы CuInSe2-ZnSe для тонкоплёночных солнечных элементов
Електронно-мікроскопічне дослідження гетеросистеми
CuInSe2-ZnSe для тонкоплівкових сонячних елементів
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| id | nasplib_isofts_kiev_ua-123456789-110751 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1562-6016 |
| language | English |
| last_indexed | 2025-12-02T05:30:08Z |
| publishDate | 2008 |
| publisher | Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| record_format | dspace |
| spelling | Grigorov, S.N. Kosevich, V.M. Kosmachev, S.M. Taran, A.V. 2017-01-06T09:59:31Z 2017-01-06T09:59:31Z 2008 Tem investigation of CuInSe₂-ZnSe heterostructures for thin film solar cells / S.N. Grigorov, V.M. Kosevich, S.M. Kosmachev, A.V. Taran // Вопросы атомной науки и техники. — 2008. — № 1. — С. 93-95. — Бібліогр.: 3 назв. — англ. 1562-6016 https://nasplib.isofts.kiev.ua/handle/123456789/110751 539.219.3 In the article, CuInSe₂ thin films obtained by sequential deposition of Cu and indium selenide starting layer with the further annealing of the two-layered composition in Se atmosphere were investigated by transmission electron microscopy (TEM). On the base of the obtained basic CuInSe₂ layers, the ZnSe buffer layers were grown. It was found that ZnSe layer of cubic modification grow epitaxialy on a surface of CuInSe₂. Проведено електронно-мікроскопічне дослідження тонких плівок CuInSe₂, виготовлених засобом послідовного осадження у вакуумі селеніду індію й міді з наступним відпалом двошарової композиції в атмосфері селену. На основі отриманих плівок CuInSe₂, були вирощені буферні шари ZnSe. Встановлено, що шар ZnSe кубічної модифікації зростає епітаксійно на поверхні плівки CuInSe₂. Проведено электронно-микроскопическое исследование тонких плёнок CuInSe₂, приготовленных методом последовательного осаждения в вакууме селенида индия и меди с последующим отжигом двухслойной композиции в атмосфере селена. На основе полученных плёнок CuInSe₂ были выращены буферные слои ZnSe. Установлено, что слой ZnSe кубической модификации растёт эпитаксиально на поверхности плёнки CuInSe₂. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Физика и технология конструкционных материалов Tem investigation of CuInSe₂-ZnSe heterostructures for thin film solar cells Електронно-мікроскопічне дослідження гетеросистеми CuInSe₂-ZnSe для тонкоплівкових сонячних елементів Электронно-микроскопическое исследование гетеросистемы CuInSe₂-ZnSe для тонкопленочных солнечных элементов Article published earlier |
| spellingShingle | Tem investigation of CuInSe₂-ZnSe heterostructures for thin film solar cells Grigorov, S.N. Kosevich, V.M. Kosmachev, S.M. Taran, A.V. Физика и технология конструкционных материалов |
| title | Tem investigation of CuInSe₂-ZnSe heterostructures for thin film solar cells |
| title_alt | Електронно-мікроскопічне дослідження гетеросистеми CuInSe₂-ZnSe для тонкоплівкових сонячних елементів Электронно-микроскопическое исследование гетеросистемы CuInSe₂-ZnSe для тонкопленочных солнечных элементов |
| title_full | Tem investigation of CuInSe₂-ZnSe heterostructures for thin film solar cells |
| title_fullStr | Tem investigation of CuInSe₂-ZnSe heterostructures for thin film solar cells |
| title_full_unstemmed | Tem investigation of CuInSe₂-ZnSe heterostructures for thin film solar cells |
| title_short | Tem investigation of CuInSe₂-ZnSe heterostructures for thin film solar cells |
| title_sort | tem investigation of cuinse₂-znse heterostructures for thin film solar cells |
| topic | Физика и технология конструкционных материалов |
| topic_facet | Физика и технология конструкционных материалов |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/110751 |
| work_keys_str_mv | AT grigorovsn teminvestigationofcuinse2znseheterostructuresforthinfilmsolarcells AT kosevichvm teminvestigationofcuinse2znseheterostructuresforthinfilmsolarcells AT kosmachevsm teminvestigationofcuinse2znseheterostructuresforthinfilmsolarcells AT taranav teminvestigationofcuinse2znseheterostructuresforthinfilmsolarcells AT grigorovsn elektronnomíkroskopíčnedoslídžennâgeterosistemicuinse2znsedlâtonkoplívkovihsonâčnihelementív AT kosevichvm elektronnomíkroskopíčnedoslídžennâgeterosistemicuinse2znsedlâtonkoplívkovihsonâčnihelementív AT kosmachevsm elektronnomíkroskopíčnedoslídžennâgeterosistemicuinse2znsedlâtonkoplívkovihsonâčnihelementív AT taranav elektronnomíkroskopíčnedoslídžennâgeterosistemicuinse2znsedlâtonkoplívkovihsonâčnihelementív AT grigorovsn élektronnomikroskopičeskoeissledovaniegeterosistemycuinse2znsedlâtonkoplenočnyhsolnečnyhélementov AT kosevichvm élektronnomikroskopičeskoeissledovaniegeterosistemycuinse2znsedlâtonkoplenočnyhsolnečnyhélementov AT kosmachevsm élektronnomikroskopičeskoeissledovaniegeterosistemycuinse2znsedlâtonkoplenočnyhsolnečnyhélementov AT taranav élektronnomikroskopičeskoeissledovaniegeterosistemycuinse2znsedlâtonkoplenočnyhsolnečnyhélementov |