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Ion sources optimization for high energy ion implantation by computer simulation

Results of the computer simulation for ion sources optimization used for ion implantations have been done. The highly stripped ion source has been designed to provide high current beams of multiply charged P and B ions for high energy ion implantation. However, the total current transport efficiency...

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Bibliographic Details
Published in:	Вопросы атомной науки и техники
Date:	2008
Main Authors:	Litovko, I.V., Gushenets, V.I.
Format:	Article
Language:	English
Published:	Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2008
Subjects:	Plasma electronics
Online Access:	https://nasplib.isofts.kiev.ua/handle/123456789/110769
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:	Ion sources optimization for high energy ion implantation by computer simulation / I.V. Litovko, V.I. Gushenets // Вопросы атомной науки и техники. — 2008. — № 6. — С. 138-140. — Бібліогр.: 3 назв. — англ.

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