Optical processes in silicon and microelectronic structures based thereon upon interaction with high-energy radiation

• Published in: Вопросы атомной науки и техники
• Date: 2003
• Main Authors: Volkov, V.G., Ryzhikov, V.D., Gnap, A.K., Kovalenko, N.I., Chernikov, V.V., Khramov, E.F.
• Format: Article
• Language: English
• Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2003
• Subjects: Физика радиационных и ионно-плазменных технологий
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/110925
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Optical processes in silicon and microelectronic structures based thereon upon interaction with high-energy radiation / V.G. Volkov, V.D. Ryzhikov, A.K. Gnap, N.I. Kovalenko, V.V. Chernikov, E.F. Khramov // Вопросы атомной науки и техники. — 2003. — № 3. — С. 154-157. — Бібліогр.: 3 назв. — англ.

Results of technical studies are presented on formation of light fluxes in silicon and integral structures based thevlon. Effects of these light fluxes upon electric parameters of planar triode structures of integral circuits are considered. It has been shown that under irradiation by high-energy pa...