The bias voltage and its influence on the etching rate of silicon

• Published in: Вопросы атомной науки и техники
• Date: 2015
• Main Authors: Fedorovich, О.А., Hladkovskiy, V.V., Polozov, B.P., Kruglenko, М.P.
• Format: Article
• Language: English
• Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2015
• Subjects: Экспериментальные методы и обработка данных
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/112376
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: The bias voltage and its influence on the etching rate of silicon / О.А. Fedorovich, V.V. Hladkovskiy, B.P. Polozov, М.P. Kruglenko // Вопросы атомной науки и техники. — 2015. — № 6. — С. 146-150. — Бібліогр.: 12 назв. — англ.

The influence of the bias voltage on the silicon etching rate in the plasma-chemical reactor (PСR) with controlled magnetic fields have been investigated. The dependences of the silicon etching rate on the power, discharge current and on the pressure in the chamber PCR are obtained. It is found that...