Analysis of Fracture Behavior of Thin Polycrystalline Diamond Films
The effect of the substrate temperature and CH₄
 concentrations on the fracture behavior of thin
 polycrystalline diamond films was systematically
 investigated by X-ray diffraction and scanning
 electron microscopy. The results show that the
 fracture behavio...
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| Date: | 2014 |
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Інститут проблем міцності ім. Г.С. Писаренко НАН України
2014
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Analysis of Fracture Behavior of Thin Polycrystalline Diamond Films / D.S. Li, D.W. Zuo, Q.H. Qin // Проблемы прочности. — 2014. — № 2. — С. 22-28. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860160130692153344 |
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| author | Li, D.S. Zuo, D.W. Qin, Q.H. |
| author_facet | Li, D.S. Zuo, D.W. Qin, Q.H. |
| citation_txt | Analysis of Fracture Behavior of Thin Polycrystalline Diamond Films / D.S. Li, D.W. Zuo, Q.H. Qin // Проблемы прочности. — 2014. — № 2. — С. 22-28. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Проблемы прочности |
| description | The effect of the substrate temperature and CH₄
concentrations on the fracture behavior of thin
polycrystalline diamond films was systematically
investigated by X-ray diffraction and scanning
electron microscopy. The results show that the
fracture behavior of thin polycrystalline diamond
films synthesized by direct current plasma jet
chemical vapor deposition is closely related to
the substrate temperature and CH₄ concentrations.
A high substrate temperature, due to difference
in the thermal expansion coefficients of the
substrate and the diamond film, causes thin
polycrystalline diamond films to generate high
residual stresses, which usually exceed fracture
strength of thin diamond film and even that of diamond.
The fracture toughness is found to drop
with the increasing ratio of CH₄ concentration.
In case of high CH₄ concentrations, various defects
and impurities, such as cracks, microscopic
holes, graphite, and amorphous carbon
were observed in the films. Thus, the substrate
temperature and CH₄ concentrations should be
strictly controlled within an appropriate
range.
С помощью рентгеновской дифракции и сканирующей электронной микроскопии исследовано влияние температуры подложки и показателя концентрации CH₄ на поведение тонких поликристаллических алмазных пленок при разрушении. Показано, что поведение при разрушении тонких поликристаллических алмазных пленок, синтезированных химическим осаждением покрытия с помощью плазменной струи при постоянном токе, зависит от температуры подложки и показателя концентрации CH₄. Большая температура подложки приводит к возникновению высоких остаточных напряжений в тонких поликристаллических алмазных пленках вследствие различных значений коэффициента теплового расширения подложки и алмазной пленки, которые, как правило, оказываются выше значений сопротивления разрушению тонкой алмазной пленки и алмаза. Обнаружено, что вязкость разрушения уменьшается с увеличением показателя концентрации CH₄. По достижении высоких показателей концентрации CH₄ в тонких пленках образуются такие дефекты и примеси, как трещины, микроскопические отверстия, углерод в форме графита и аморфный углерод. Температуру подложки и показатель концентрации CH₄ необходимо контролировать в надлежащем диапазоне.
За допомогою рентгенівської дифракції і скануючої електронної мікроскопії досліджено вплив температури підкладки і показника концентрації CH₄ на поведінку тонких полікристалічних алмазних плівок під час руйнування. Показано, що поведінка при руйнуванні тонких полікристалічних алмазних плівок, синтезованих хімічним осадженням покриття за допомогою плазмового струменя на основі постійного струму, залежить від температури підкладки і показника концентрації CH₄. Велика температура підкладки призводить до виникнення в тонких полікристалічних алмазних плівках високих залишкових напружень внаслідок різних значень коефіцієнта теплового розширення підкладки й алмазної плівки, які, як правило, вищі за значення опору руйнуванню тонкої алмазної плівки й алмаза. Виявлено, що в’язкість руйнування зменшується зі збільшенням показника концентрації CH₄. Після досягнення високих показників концентрації CH₄ у тонких плівках мають місце такі дефекти і домішки, як тріщини, макроскопічні отвори, вуглець у формі графіту і аморфний вуглець. Температуру підкладки і показник концентрації потрібно контролювати в необхідних межах.
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| first_indexed | 2025-12-07T17:54:39Z |
| format | Article |
| fulltext |
UDC 539.4
Analysis of Fracture Behavior of Thin Polycrystalline Diamond Films
D. S. Li,
a,c,1
D. W. Zuo,
a,b
and Q. H. Qin
c
a College of Material Science and Engineering, Nanchang Hangkong University, Nanchang, China
b College of Mechanical and Electrical Engineering, Nanjing University of Aeronautics and
Astronautics, Nanjing, China
c Research School of Engineering, Australian National University, Canberra, Australia
1 ldsnuaa @nuaa.edu.cn)
ÓÄÊ 539.4
Àíàëèç ïîâåäåíèÿ òîíêèõ ïîëèêðèñòàëëè÷åñêèõ àëìàçíûõ ïëåíîê ïðè
ðàçðóøåíèè
Ä. Ø. Ëè,
à,â,1
Ä. Â. Çóî,
à,á
Ê. Õ. Êâèí
â
à Ôàêóëüòåò ìàòåðèàëîâåäåíèÿ è ìàøèíîñòðîåíèÿ, Íàí÷àíãñêèé óíèâåðñèòåò, Íàí÷àíã, Êèòàé
á Ôàêóëüòåò ìàòåðèàëîâåäåíèÿ è ìàøèíîñòðîåíèÿ, Íàíäæèíñêèé óíèâåðñèòåò àâèàöèè è êîñìî-
íàâòèêè, Íàíäæèíã, Êèòàé
â Íàó÷íî-èññëåäîâàòåëüñêàÿ êàôåäðà ìàøèíîñòðîåíèÿ, Íàöèîíàëüíûé Àâñòðàëèéñêèé óíèâåð-
ñèòåò, Êàíáåððà, Àâñòðàëèÿ
Ñ ïîìîùüþ ðåíòãåíîâñêîé äèôðàêöèè è ñêàíèðóþùåé ýëåêòðîííîé ìèêðîñêîïèè èññëåäîâàíî
âëèÿíèå òåìïåðàòóðû ïîäëîæêè è ïîêàçàòåëÿ êîíöåíòðàöèè CH4 íà ïîâåäåíèå òîíêèõ
ïîëèêðèñòàëëè÷åñêèõ àëìàçíûõ ïëåíîê ïðè ðàçðóøåíèè. Ïîêàçàíî, ÷òî ïîâåäåíèå ïðè ðàçðó-
øåíèè òîíêèõ ïîëèêðèñòàëëè÷åñêèõ àëìàçíûõ ïëåíîê, ñèíòåçèðîâàííûõ õèìè÷åñêèì îñàæ-
äåíèåì ïîêðûòèÿ ñ ïîìîùüþ ïëàçìåííîé ñòðóè ïðè ïîñòîÿííîì òîêå, çàâèñèò îò òåìïå-
ðàòóðû ïîäëîæêè è ïîêàçàòåëÿ êîíöåíòðàöèè CH4. Áîëüøàÿ òåìïåðàòóðà ïîäëîæêè ïðè-
âîäèò ê âîçíèêíîâåíèþ âûñîêèõ îñòàòî÷íûõ íàïðÿæåíèé â òîíêèõ ïîëèêðèñòàëëè÷åñêèõ
àëìàçíûõ ïëåíêàõ âñëåäñòâèå ðàçëè÷íûõ çíà÷åíèé êîýôôèöèåíòà òåïëîâîãî ðàñøèðåíèÿ ïîä-
ëîæêè è àëìàçíîé ïëåíêè, êîòîðûå, êàê ïðàâèëî, îêàçûâàþòñÿ âûøå çíà÷åíèé ñîïðîòèâëåíèÿ
ðàçðóøåíèþ òîíêîé àëìàçíîé ïëåíêè è àëìàçà. Îáíàðóæåíî, ÷òî âÿçêîñòü ðàçðóøåíèÿ
óìåíüøàåòñÿ ñ óâåëè÷åíèåì ïîêàçàòåëÿ êîíöåíòðàöèè CH4. Ïî äîñòèæåíèè âûñîêèõ ïîêàçà-
òåëåé êîíöåíòðàöèè CH4 â òîíêèõ ïëåíêàõ îáðàçóþòñÿ òàêèå äåôåêòû è ïðèìåñè, êàê
òðåùèíû, ìèêðîñêîïè÷åñêèå îòâåðñòèÿ, óãëåðîä â ôîðìå ãðàôèòà è àìîðôíûé óãëåðîä.
Òåìïåðàòóðó ïîäëîæêè è ïîêàçàòåëü êîíöåíòðàöèè CH4 íåîáõîäèìî êîíòðîëèðîâàòü â
íàäëåæàùåì äèàïàçîíå.
Êëþ÷åâûå ñëîâà: òîíêàÿ ïîëèêðèñòàëëè÷åñêàÿ àëìàçíàÿ ïëåíêà, ðàçðóøåíèå, òåìïå-
ðàòóðà ïîäëîæêè, êîíöåíòðàöèÿ CH4, îñòàòî÷íîå íàïðÿæåíèå.
Introducton. Direct current plasma jet chemical vapor deposited (DCPJ-CVD)
polycrystalline diamond thin films have been widely used in optical, electronic, mechanical
and thermal applications [1–3]. The fracture behavior of diamond thin films is of great
importance. The residual stresses reduce the fracture toughness and mechanical strength of
films. Understanding of their fracture behavior is essential to these applications. Diamond
film is usually grown on the hetero-epitaxial substrates, such as Si, Mo, and Ti. The film
deposited on the substrates may induce some defects and impurities due to lattice mismatch
© D. S. LI, D. W. ZUO, Q. H. QIN, 2014
22 ISSN 0556-171X. Ïðîáëåìû ïðî÷íîñòè, 2014, ¹ 2
and residual stresses. Takeuchi et al. [4] analyzed the surface defect status of diamond.
Ikeda et al. [5] investigated the facture behavior of polycrystalline diamond film. Shames et
al. [6] studied the localization and nature of the defects for powder and compact diamond
films. Stiegler et al. [7] analyzed the impurity and defect incorporation in diamond films.
Jeong et al. [8] explored mechanisms of cracking in the CVD films experimentally and
theoretically. In the recent years, diamond films become very popular, and commercial
diamond wafers are successfully used. However, cracking and defect problems reported in
the literature are observed for the large-sized diamond wafer only [9, 10]. For diamond
films deposited on curved surfaces (e.g., convex substrates), it is very difficult to keep a
uniform temperature along a heterogeneous substrate. Cracks and defects are easily formed
due to non-uniform temperature distribution over the substrate surface. To the best of our
knowledge, crack problems for such a thin film were not yet reported in the literature. In
this study, we select Mo as the substrate material for depositing diamond film because of a
low lattice mismatch between the diamond and the underlying Mo substrate. The mechanisms
of generation of cracks and defects during the depositing process of the diamond film are
investigated. It should be mentioned that a new substrate cooling system presented in [11]
was used to ensure nearly uniform temperature over the substrate surface.
Experimental. In this work, polycrystalline diamond thin films were deposited onto a
molybdenum substrate with diameter of 60 mm using the DCPJ-CVD system [12]. In this
process, a mixture of methane (CH4) and hydrogen (H2) gases was used as carbon source
for the growth of a diamond thin film. Argon (Ar) gas was subsequently ionized by CVD
system to form the DC jet plasma. The anode and cathode were made of metal tungsten and
copper, respectively.
Mo substrate was pretreated before growing the films. The substrate temperature was
varied by the flow rate of the cooling water and the system power variation. The typical
experimental conditions for the growth of diamond film by DCPJCVD are as follows. The
methane ratio was 1.8–8.0%, with the hydrogen flow rate of 1000 ml/min. The total
pressure of reaction chamber was approximately 45–50 kPa. The substrate temperature was
controlled within the range of 850–1100�C by an on-line Infra-red (IR) pyrometer. The
fracture behavior of the films was investigated by scanning electron microscopy (SEM), as
well as X-ray diffraction (XRD) with regard to the surface morphology, defects, cracks, and
fracture behavior.
With the growth of the polycrystalline diamond thin films, the temperature distribution
along the radial direction is labeled as 0, 1, 2, 3, 4, and 5 on the substrate. The schematic
diagram is shown in Fig. 1.
Results and Discussion. The XRD pattern for the microstructure orientation of
diamond thin film is shown in Fig. 2.
Analysis of Fracture Behavior ...
ISSN 0556-171X. Ïðîáëåìû ïðî÷íîñòè, 2014, ¹ 2 23
Fig. 1 Fig. 2
Fig. 1. Schematic diagram of radial direction of a substrate.
Fig. 2. XRD analysis of a diamond film.
It can be seen that the peaks were identified at diamond (111), (220), and (311) for
evolution of the morphology of the diamond film. The results indicated that the diamond
film is polycrystalline, as (111) facet of the film is dominant. It should be noted that many
properties of the diamond thin film are strongly influenced by its crystal orientation and
grain size.
Figure 3 shows the relation of diamond thin film microstrain versus its radial direction
for different CH4 concentrations and crystal orientations. It can be seen that with the
increase in CH4 concentration, the film microstrain is substantially increased. Here,
microstrain value in the (111) face is small and is much higher in the (311) face. Thus, the
corresponding macroscopic stress is also increased. The residual stress is so high, that it
results in formation of microcracks and even fracture of the diamond film. It has also been
found that higher CH4 concentrations induce higher microstrains and residual stresses. In
this study, the diamond thin film exhibited a poor fracture resistance.
Figure 4 depicts variation of the substrate temperature at six various points versus the
deposition time. The highest temperature of the film is observed at the central point (i.e.,
point 0) and the lowest temperature – at edge (i.e., point 5). It is also seen from Fig. 4 that
the substrate temperature increases with the increase in the deposition time. The temperature
difference along the radial direction does not exceed 20�C. The surface temperature of the
film decreased along the outward radial direction. The temperature difference of the
substrate may significantly affect the quality of the film. However, the temperature
fluctuation was about 3–6% of the mean value, so that its effect on the growth of diamond
film was negligible.
D. S. Li, D. W. Zuo, and Q. H. Qin
24 ISSN 0556-171X. Ïðîáëåìû ïðî÷íîñòè, 2014, ¹ 2
Fig. 3. Microcharacterization of a diamond film.
Fig. 4. Substrate temperature vs deposition time.
When diamond film is prepared onto a hetero-epitaxial substrate, some defects and
impurities in diamond film may be inevitably induced due to the lattice mismatch and
residual stresses. The residual stress is the main deteriorating factor of the diamond film,
which strongly depends on the substrate temperature.
Diamond film samples were prepared and tested at 900, 1000, and 1100�C, respectively.
Other growth parameters were kept the same in the experiment. The residual stress in the
diamond film was measured using the XRD technique, and the respective results are shown
in Fig. 5.
Figure 5 shows that the residual stress of the film increased along with the increase of
the substrate temperature when the substrate temperature was varied in the range of
900–1000�C. Tensile stresses varied in the range of 1.5–3.2 GPa. However, it was found
that the residual stress decreased significantly when the substrate temperature was equal to
1100�C. The possible reason is that much higher residual stresses or more numerous
impurities in diamond films occured when the substrate temperature was increased or high
CH4 concentration was used. Thus, the residual stress of the diamond film increased with
the increasing temperature. However, when the substrate temperature is too high, say,
1100�C, high residual stresses may result in formation of microcracks in the diamond film.
Those microcracks and microvoids will develop and eventually result in the cracking and
fracturing of the polycrystalline diamond thin film, which would provide relaxation of the
residual stress to a smaller value at 1100�C.
This implies that at high substrate temperatures a partial nucleation process of the
original diamond film would rapidly occur, which would inhibit growth of other grains. As
a consequence, the thin film will exhibit a low nucleation density and a large grain size.
Noteworthy is that the coefficient of thermal expansion (CTE) of Mo substrate is higher
than that of a diamond, which may induce a higher residual stress in the diamond thin film
when the film is cooled down from a relatively high temperature, thus deteriorating its
mechanical strength [13]. If the internal stress of the diamond film is higher that the
ultimate (fracture) strength, microcracks and even fracture may occur. Polycrystalline
diamond thin films exhibit a poor fracture resistance. Further investigation of the fracture
behavior of polycrystalline diamond thin film was made using the diamond film SEM
image shown in Fig. 6.
Figure 6a shows that, for a reasonable substrate temperature (880�C) and CH4
concentration (1.3%), the diamond crystal is approximately uniform and has clear grain
boundaries. However, at the substrate temperatures of 970 and 1040�C, microcracks in the
diamond were found which covered the total surface and resulted in the local fracture of the
diamond films. The SEM images of the film for the latter two temperatures are shown in
Fig. 6b and 6c, respectively. Cracks and fracture had a negative influence on physical and
mechanical properties of the film such as mechanical stiffness, optical properties, and
thermal conductivity [14].
The mechanism of fracture formation in the film can be explained as follows.
Diamond films were deposited onto the heterogeneous substrate, which was usually
Analysis of Fracture Behavior ...
ISSN 0556-171X. Ïðîáëåìû ïðî÷íîñòè, 2014, ¹ 2 25
Fig. 5. Residual stress in radial direction of polycrystalline diamond thin films.
accompanied by formation of some defects such as cracks, non-carbon impurities and
microscopic holes due to inappropriate growth process. These defects like microcracks
extended from inside to the diamond film surface. This is the major factor controlling the
diamond film fracture. Figure 6 depicts the diamond film containing some defects,
microcracks and a fractured zone.
In particular, some microcracks appeared in the diamond film due to improper growth
processes, such as high or low substrate temperatures, high CH4 concentration and high
growth rate, as shown in Fig. 6b. When these microcracks get further converged and
accumulated, the cracks became visible. The diamond film was deposited with a relatively
columnar patern, but it also contained some microstructural defects, including amorphous
carbon and graphite, as well as a microvoid, which propagated and turned into a macrocrack
with the eventual fracture of the film, as shown in Fig. 6c. It can also be observed in Fig. 6b
that microcracks in the diamond film generally appear at the grain boundaries. These
defects may cause a sharp deterioration, in terms of physical and mechanical performance
of the diamond film.
The DCPJ-CVD diamond film has undergone the process of nucleation and growth.
During the nucleation stage, the carbon-containing gas source with the appropriate
parameters of process has formed a certain number of isolated diamond nucleation sources
on the deposition substrate. Diamond nucleation sources continued to expand, then covered
the entire surface of the substrate, and eventually grew along the vertical direction of the
substrate. Finally, this process involved a certain thickness of the diamond film. While the
nucleation density is usually less than 1012 cm�2 on the non-diamond substrate [14, 15], it
results in a gap between the grain and the nucleation surface grain. Therefore, formation of
the diamond film and the substrate are not entirely brought into a close contact. The
presence of these tiny non-contact areas in the diamond film may be observed even for the
entire surface of the substrate, leaving microvoids in the film-based interface. In particular,
the increased substrate temperatures or high CH4 concentrations result in higher residual
stresses or more numerous impurities in diamond films. The microvoids evolved into the
polycrystalline diamond thin film also contribute to its cracking and fracturing, which can
be seen in Fig. 6. The presence of microvoids and microcracks weakened the binding of the
diamond film and the substrate between the diamond interfaces. The properties and the
crystal grains of the diamond film imply the initial crack formstion and further fracture.
Poor fracture resistance sharply decreases the mechanical property of the diamond films.
Under external force, the initial crack is firstly caused by the stress concentration at the
crack tip region, then this crack propagates and eventually triggers the coating to break off.
However, through the control of the growth temperature of the diamond film, the
26 ISSN 0556-171X. Ïðîáëåìû ïðî÷íîñòè, 2014, ¹ 2
D. S. Li, D. W. Zuo, and Q. H. Qin
a b c
Fig. 6. SEM image of the diamond film: (a) uniform and integrated pattern; (b) microcrack; (c) local
fracture.
concentration of carbon source and the substrate surface temperature could be uniformity
optimized. These made it possible to prepare a high-quality diamond film without
microcracks, as shown in Fig. 6a.
Conclusions. The formation of cracks and fracture represent an intrinsic problem in
fabricating polycrystalline diamond thin films. In this work, a study on diamond film
deposited at different substrate temperature and CH4 concentrations was carried out, using
the XRD and SEM techniques. The results obtained show that some defects rapidly grow
with the increase in the substrate temperature. The XRD analysis testifies that high
temperature results in high residual stresses in diamond film if the substrate temperature is
less than 985�C. When the substrate temperature exceeds 1100�C, the prepared diamond
film has very low residual stresses due to larger number of microcracks in the film, which
provide relaxation of the residual stresses. The SEM results reveal that some radial cracks
have penetrated the surface of the diamond film and extended to the center of diamond
film. Coalescence and growth of these cracks may induce formation of microscopic holes
and even cause the diamond film local fracture.
Acknowledgements. The authors acknowledge the financial support of Education
Science Foundation of Jiangxi Province (GJJ13492), Fund for the Doctoral Program of
NCHU (EA200901168) and Natural Science Foundation of China (50605032).
Ð å ç þ ì å
Çà äîïîìîãîþ ðåíòãåí³âñüêî¿ äèôðàêö³¿ ³ ñêàíóþ÷î¿ åëåêòðîííî¿ ì³êðîñêîﳿ äîñë³ä-
æåíî âïëèâ òåìïåðàòóðè ï³äêëàäêè ³ ïîêàçíèêà êîíöåíòðàö³¿ CH4 íà ïîâåä³íêó
òîíêèõ ïîë³êðèñòàë³÷íèõ àëìàçíèõ ïë³âîê ï³ä ÷àñ ðóéíóâàííÿ. Ïîêàçàíî, ùî ïîâå-
ä³íêà ïðè ðóéíóâàíí³ òîíêèõ ïîë³êðèñòàë³÷íèõ àëìàçíèõ ïë³âîê, ñèíòåçîâàíèõ õ³ì³÷-
íèì îñàäæåííÿì ïîêðèòòÿ çà äîïîìîãîþ ïëàçìîâîãî ñòðóìåíÿ íà îñíîâ³ ïîñò³éíîãî
ñòðóìó, çàëåæèòü â³ä òåìïåðàòóðè ï³äêëàäêè ³ ïîêàçíèêà êîíöåíòðàö³¿ CH4. Âåëèêà
òåìïåðàòóðà ï³äêëàäêè ïðèçâîäèòü äî âèíèêíåííÿ â òîíêèõ ïîë³êðèñòàë³÷íèõ àëìàç-
íèõ ïë³âêàõ âèñîêèõ çàëèøêîâèõ íàïðóæåíü âíàñë³äîê ð³çíèõ çíà÷åíü êîåô³ö³ºíòà
òåïëîâîãî ðîçøèðåííÿ ï³äêëàäêè é àëìàçíî¿ ïë³âêè, ÿê³, ÿê ïðàâèëî, âèù³ çà çíà÷åííÿ
îïîðó ðóéíóâàííþ òîíêî¿ àëìàçíî¿ ïë³âêè é àëìàçà. Âèÿâëåíî, ùî â’ÿçê³ñòü ðóéíó-
âàííÿ çìåíøóºòüñÿ ç³ çá³ëüøåííÿì ïîêàçíèêà êîíöåíòðàö³¿ CH4. ϳñëÿ äîñÿãíåííÿ
âèñîêèõ ïîêàçíèê³â êîíöåíòðàö³¿ CH4 ó òîíêèõ ïë³âêàõ ìàþòü ì³ñöå òàê³ äåôåêòè ³
äîì³øêè, ÿê òð³ùèíè, ìàêðîñêîï³÷í³ îòâîðè, âóãëåöü ó ôîðì³ ãðàô³òó ³ àìîðôíèé
âóãëåöü. Òåìïåðàòóðó ï³äêëàäêè ³ ïîêàçíèê êîíöåíòðàö³¿ ïîòð³áíî êîíòðîëþâàòè â
íåîáõ³äíèõ ìåæàõ.
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Received 22. 11. 2013
28 ISSN 0556-171X. Ïðîáëåìû ïðî÷íîñòè, 2014, ¹ 2
D. S. Li, D. W. Zuo, and Q. H. Qin
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| id | nasplib_isofts_kiev_ua-123456789-112698 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0556-171X |
| language | English |
| last_indexed | 2025-12-07T17:54:39Z |
| publishDate | 2014 |
| publisher | Інститут проблем міцності ім. Г.С. Писаренко НАН України |
| record_format | dspace |
| spelling | Li, D.S. Zuo, D.W. Qin, Q.H. 2017-01-26T10:41:48Z 2017-01-26T10:41:48Z 2014 Analysis of Fracture Behavior of Thin Polycrystalline Diamond Films / D.S. Li, D.W. Zuo, Q.H. Qin // Проблемы прочности. — 2014. — № 2. — С. 22-28. — Бібліогр.: 15 назв. — англ. 0556-171X https://nasplib.isofts.kiev.ua/handle/123456789/112698 539.4 The effect of the substrate temperature and CH₄
 concentrations on the fracture behavior of thin
 polycrystalline diamond films was systematically
 investigated by X-ray diffraction and scanning
 electron microscopy. The results show that the
 fracture behavior of thin polycrystalline diamond
 films synthesized by direct current plasma jet
 chemical vapor deposition is closely related to
 the substrate temperature and CH₄ concentrations.
 A high substrate temperature, due to difference
 in the thermal expansion coefficients of the
 substrate and the diamond film, causes thin
 polycrystalline diamond films to generate high
 residual stresses, which usually exceed fracture
 strength of thin diamond film and even that of diamond.
 The fracture toughness is found to drop
 with the increasing ratio of CH₄ concentration.
 In case of high CH₄ concentrations, various defects
 and impurities, such as cracks, microscopic
 holes, graphite, and amorphous carbon
 were observed in the films. Thus, the substrate
 temperature and CH₄ concentrations should be
 strictly controlled within an appropriate
 range. С помощью рентгеновской дифракции и сканирующей электронной микроскопии исследовано влияние температуры подложки и показателя концентрации CH₄ на поведение тонких поликристаллических алмазных пленок при разрушении. Показано, что поведение при разрушении тонких поликристаллических алмазных пленок, синтезированных химическим осаждением покрытия с помощью плазменной струи при постоянном токе, зависит от температуры подложки и показателя концентрации CH₄. Большая температура подложки приводит к возникновению высоких остаточных напряжений в тонких поликристаллических алмазных пленках вследствие различных значений коэффициента теплового расширения подложки и алмазной пленки, которые, как правило, оказываются выше значений сопротивления разрушению тонкой алмазной пленки и алмаза. Обнаружено, что вязкость разрушения уменьшается с увеличением показателя концентрации CH₄. По достижении высоких показателей концентрации CH₄ в тонких пленках образуются такие дефекты и примеси, как трещины, микроскопические отверстия, углерод в форме графита и аморфный углерод. Температуру подложки и показатель концентрации CH₄ необходимо контролировать в надлежащем диапазоне. За допомогою рентгенівської дифракції і скануючої електронної мікроскопії досліджено вплив температури підкладки і показника концентрації CH₄ на поведінку тонких полікристалічних алмазних плівок під час руйнування. Показано, що поведінка при руйнуванні тонких полікристалічних алмазних плівок, синтезованих хімічним осадженням покриття за допомогою плазмового струменя на основі постійного струму, залежить від температури підкладки і показника концентрації CH₄. Велика температура підкладки призводить до виникнення в тонких полікристалічних алмазних плівках високих залишкових напружень внаслідок різних значень коефіцієнта теплового розширення підкладки й алмазної плівки, які, як правило, вищі за значення опору руйнуванню тонкої алмазної плівки й алмаза. Виявлено, що в’язкість руйнування зменшується зі збільшенням показника концентрації CH₄. Після досягнення високих показників концентрації CH₄ у тонких плівках мають місце такі дефекти і домішки, як тріщини, макроскопічні отвори, вуглець у формі графіту і аморфний вуглець. Температуру підкладки і показник концентрації потрібно контролювати в необхідних межах. The authors acknowledge the financial support of Education
 Science Foundation of Jiangxi Province (GJJ13492), Fund for the Doctoral Program of
 NCHU (EA200901168) and Natural Science Foundation of China (50605032). en Інститут проблем міцності ім. Г.С. Писаренко НАН України Проблемы прочности Научно-технический раздел Analysis of Fracture Behavior of Thin Polycrystalline Diamond Films Анализ поведения тонких поликристаллических алмазных пленок при разрушении Article published earlier |
| spellingShingle | Analysis of Fracture Behavior of Thin Polycrystalline Diamond Films Li, D.S. Zuo, D.W. Qin, Q.H. Научно-технический раздел |
| title | Analysis of Fracture Behavior of Thin Polycrystalline Diamond Films |
| title_alt | Анализ поведения тонких поликристаллических алмазных пленок при разрушении |
| title_full | Analysis of Fracture Behavior of Thin Polycrystalline Diamond Films |
| title_fullStr | Analysis of Fracture Behavior of Thin Polycrystalline Diamond Films |
| title_full_unstemmed | Analysis of Fracture Behavior of Thin Polycrystalline Diamond Films |
| title_short | Analysis of Fracture Behavior of Thin Polycrystalline Diamond Films |
| title_sort | analysis of fracture behavior of thin polycrystalline diamond films |
| topic | Научно-технический раздел |
| topic_facet | Научно-технический раздел |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/112698 |
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