Theoretical approach to electrodiffusion of shallow donors in semiconductors: I. Stationary limit

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 1998
• Main Authors: Kashirina, N.I., Kislyuk, V.V., Sheinkman, M.K.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1998
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/114667
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Theoretical approach to electrodiffusion of shallow donors in semiconductors: I. Stationary limit / N.I. Kashirina, V.V. Kislyuk, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1998. — Т. 1, № 1. — С. 41-44. — Бібліогр.: 12 назв. — англ.

Analysis is made for the possibility of redistribution of mobile point defects in a semiconductor after its exposure to the electric field till the stationary conditions in the crystal are reached. Two different ways of applying the voltage are considered: (i) directly to the sample, (ii) to a capac...