Crystallization kinetics of Ge₂₂Sb₂₂Tе₅₆ doped with Se and Ni

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 1998
• Main Authors: Garsia-Garsia, E., Yanez-Limon, M., Vorobiev, Y., Espinoza-Beltran, F., Gonzalez-Hernandez, J.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1998
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/114673
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Crystallization kinetics of Ge₂₂Sb₂₂Tе₅₆ doped with Se and Ni / E. Garsia-Garsia, M. Yanez-Limon, Y. Vorobiev, F. Espinoza-Beltran, J. Gonzalez-Hernandez // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1998. — Т. 1, № 1. — С. 71-74. — Бібліогр.: 8 назв. — англ.

Effects of Ni and Se incorporation on the crystallization kinetics of Ge:Sb:Te alloys have been studied. Both elements were found to increase the stability of the amorphous structure. The kinetics of crystallization under isothermal treatments indicates that Ni reduces both the barrier for thermal c...