Distribution of components in epitaxial graded band gap heterostructures Cd(Mn, Zn)Te – Cd(Mn, Zn)HgTe and their photoelectrical properties
By using the method of VPE CdMnTe-CdMnHgTe, CdZnTe-CdZnHgTe heterocompositions were fabricated. Increase of their photo-sensitivity in comparison with the CdTe-CdHgTe structure is explained by removal of deformation stresses due to introduction of isovalent component (Mn, Zn) of smaller size and due...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 1998 |
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1998
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/114674 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Distribution of components in epitaxial graded band gap heterostructures Cd(Mn, Zn)Te – Cd(Mn, Zn)HgTe and their photoelectrical properties / O.I. Vlasenko, V.M. Babent1sov, Z.K. Vlasenko, A.V. Ponedilok, I.V. Kurilo, I.O. Rudyj, V.V. Kremenitskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1998. — Т. 1, № 1. — С. 75-81. — Бібліогр.: 24 назв. — англ. |