Distribution of components in epitaxial graded band gap heterostructures Cd(Mn, Zn)Te – Cd(Mn, Zn)HgTe and their photoelectrical properties

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 1998
• Hauptverfasser: Vlasenko, O.I., Babentsov, V.M., Vlasenko, Z.K., Ponedilok, A.V., Kurilo, I.V., Rudyj, I.O., Kremenitskiy, V.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1998
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/114674
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Distribution of components in epitaxial graded band gap heterostructures Cd(Mn, Zn)Te – Cd(Mn, Zn)HgTe and their photoelectrical properties / O.I. Vlasenko, V.M. Babent1sov, Z.K. Vlasenko, A.V. Ponedilok, I.V. Kurilo, I.O. Rudyj, V.V. Kremenitskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1998. — Т. 1, № 1. — С. 75-81. — Бібліогр.: 24 назв. — англ.

By using the method of VPE CdMnTe-CdMnHgTe, CdZnTe-CdZnHgTe heterocompositions were fabricated. Increase of their photo-sensitivity in comparison with the CdTe-CdHgTe structure is explained by removal of deformation stresses due to introduction of isovalent component (Mn, Zn) of smaller size and due...