SIMS study of deuterium distribution and thermal stability in ZMR SOI structures

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 1998
• Main Authors: Boutry-Forveille, A., Ballutaud, D., Nazarov, A.N.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1998
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/114678
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: SIMS study of deuterium distribution and thermal stability in ZMR SOI structures / A. Boutry-Forveille, D. Ballutaud, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1998. — Т. 1, № 1. — С. 108-111. — Бібліогр.: 12 назв. — англ.

SIMS measurements and thermal effusion experiments were performed to study the distribution and thermal stability of deuterium in SOI structures fabricated by zone melting recrystallization technique. It was found that the disordered structure at the silicon-buried oxide interfaces is directly relat...