SIMS study of deuterium distribution and thermal stability in ZMR SOI structures

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 1998
• Hauptverfasser: Boutry-Forveille, A., Ballutaud, D., Nazarov, A.N.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1998
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/114678
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: SIMS study of deuterium distribution and thermal stability in ZMR SOI structures / A. Boutry-Forveille, D. Ballutaud, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1998. — Т. 1, № 1. — С. 108-111. — Бібліогр.: 12 назв. — англ.

SIMS measurements and thermal effusion experiments were performed to study the distribution and thermal stability of deuterium in SOI structures fabricated by zone melting recrystallization technique. It was found that the disordered structure at the silicon-buried oxide interfaces is directly relat...