Influence of the surface electronic processes on the spectrometric characteristics of silicon detectors

• Published in: Вопросы атомной науки и техники
• Date: 2016
• Main Authors: Gaidar, G.P., Berdnichenko, S.V., Vorobyov, V.G., Kochkin, V.I., Lastovetskiy, V.F., Litovchenko, P.G.
• Format: Article
• Language: English
• Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2016
• Subjects: Физика радиационных повреждений и явлений в твердых телах
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/115345
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Influence of the surface electronic processes on the spectrometric characteristics of silicon detectors / G.P. Gaidar, S.V. Berdnichenko, V.G. Vorobyov, V.I. Kochkin, V.F. Lastovetskiy, P.G. Litovchenko // Вопросы атомной науки и техники. — 2016. — № 2. — С. 17-24. — Бібліогр.: 11 назв. — англ.

In this paper the features of influence of the surface electron processes on the formation of silicon surface-barrier
 detector structures were founded, the regimes of chemical treatments of the surface for Si crystals were established
 with using of different combinations of etchant...