Resonant tunneling of electrons in quantum wires

We considered resonant electron tunneling in various nanostructures including single wall carbon nanotubes, molecular transistors and quantum wires formed in two-dimensional electron gas. The review starts with a textbook description of resonant tunneling of noninteracting electrons through a double...

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Published in:Физика низких температур
Date:2010
Main Authors: Krive, I.V., Palevski, A., Shekhter, R.I., Jonson, M.
Format: Article
Language:English
Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2010
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/116891
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Resonant tunneling of electrons in quantum wires / I.V. Krive, A. Palevski, R.I. Shekhter, and M. Jonson // Физика низких температур. — 2010. — Т. 36, № 2. — С. 155-180. — Бібліогр.: 149 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Krive, I.V.
Palevski, A.
Shekhter, R.I.
Jonson, M.
author_facet Krive, I.V.
Palevski, A.
Shekhter, R.I.
Jonson, M.
citation_txt Resonant tunneling of electrons in quantum wires / I.V. Krive, A. Palevski, R.I. Shekhter, and M. Jonson // Физика низких температур. — 2010. — Т. 36, № 2. — С. 155-180. — Бібліогр.: 149 назв. — англ.
collection DSpace DC
container_title Физика низких температур
description We considered resonant electron tunneling in various nanostructures including single wall carbon nanotubes, molecular transistors and quantum wires formed in two-dimensional electron gas. The review starts with a textbook description of resonant tunneling of noninteracting electrons through a double-barrier structure. The effects of electron–electron interaction in sequential and resonant electron tunneling are studied by using Luttinger liquid model of electron transport in quantum wires. The experimental aspects of the problem (fabrication of quantum wires and transport measurements) are also considered. The influence of vibrational and electromechanical effects on resonant electron tunneling in molecular transistors is discussed.
first_indexed 2025-12-07T13:29:34Z
format Article
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 0132-6414
language English
last_indexed 2025-12-07T13:29:34Z
publishDate 2010
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
record_format dspace
spelling Krive, I.V.
Palevski, A.
Shekhter, R.I.
Jonson, M.
2017-05-18T05:20:39Z
2017-05-18T05:20:39Z
2010
Resonant tunneling of electrons in quantum wires / I.V. Krive, A. Palevski, R.I. Shekhter, and M. Jonson // Физика низких температур. — 2010. — Т. 36, № 2. — С. 155-180. — Бібліогр.: 149 назв. — англ.
0132-6414
PACS: 73.63.–b, 73.23.Hk, 85.85.+j.
https://nasplib.isofts.kiev.ua/handle/123456789/116891
We considered resonant electron tunneling in various nanostructures including single wall carbon nanotubes, molecular transistors and quantum wires formed in two-dimensional electron gas. The review starts with a textbook description of resonant tunneling of noninteracting electrons through a double-barrier structure. The effects of electron–electron interaction in sequential and resonant electron tunneling are studied by using Luttinger liquid model of electron transport in quantum wires. The experimental aspects of the problem (fabrication of quantum wires and transport measurements) are also considered. The influence of vibrational and electromechanical effects on resonant electron tunneling in molecular transistors is discussed.
This work was supported in parts by the Swedish VR 
 and SSF, by the Faculty of Science at the University of Gothenburg through the «Nanoparticle» Research Platform, 
 and by the Korean WCU programme funded by MEST 
 through KOSEF (R31-2008-000-10057-0). IVK gratefully 
 acknowledges financial support from a joint grant from the 
 Ministries of Education and Science in Israel and Ukraine 
 and from the grant «Effects of electronic, magnetic and 
 elastic properties in strongly inhomogeneous nanostructures» provided by the National Academy of Sciences of 
 Ukraine. IVK thanks the Department of Physics at the University of Gothenburg and the School of Physics and Astronomy at Tel Aviv University for hospitality.
en
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Физика низких температур
Квантовые жидкости и квантовые кристаллы
Resonant tunneling of electrons in quantum wires
Article
published earlier
spellingShingle Resonant tunneling of electrons in quantum wires
Krive, I.V.
Palevski, A.
Shekhter, R.I.
Jonson, M.
Квантовые жидкости и квантовые кристаллы
title Resonant tunneling of electrons in quantum wires
title_full Resonant tunneling of electrons in quantum wires
title_fullStr Resonant tunneling of electrons in quantum wires
title_full_unstemmed Resonant tunneling of electrons in quantum wires
title_short Resonant tunneling of electrons in quantum wires
title_sort resonant tunneling of electrons in quantum wires
topic Квантовые жидкости и квантовые кристаллы
topic_facet Квантовые жидкости и квантовые кристаллы
url https://nasplib.isofts.kiev.ua/handle/123456789/116891
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AT palevskia resonanttunnelingofelectronsinquantumwires
AT shekhterri resonanttunnelingofelectronsinquantumwires
AT jonsonm resonanttunnelingofelectronsinquantumwires