Resonant tunneling of electrons in quantum wires

We considered resonant electron tunneling in various nanostructures including single wall carbon nanotubes, molecular transistors and quantum wires formed in two-dimensional electron gas. The review starts with a textbook description of resonant tunneling of noninteracting electrons through a double...

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Опубліковано в: :Физика низких температур
Дата:2010
Автори: Krive, I.V., Palevski, A., Shekhter, R.I., Jonson, M.
Формат: Стаття
Мова:English
Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2010
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Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/116891
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Resonant tunneling of electrons in quantum wires / I.V. Krive, A. Palevski, R.I. Shekhter, and M. Jonson // Физика низких температур. — 2010. — Т. 36, № 2. — С. 155-180. — Бібліогр.: 149 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-116891
record_format dspace
spelling Krive, I.V.
Palevski, A.
Shekhter, R.I.
Jonson, M.
2017-05-18T05:20:39Z
2017-05-18T05:20:39Z
2010
Resonant tunneling of electrons in quantum wires / I.V. Krive, A. Palevski, R.I. Shekhter, and M. Jonson // Физика низких температур. — 2010. — Т. 36, № 2. — С. 155-180. — Бібліогр.: 149 назв. — англ.
0132-6414
PACS: 73.63.–b, 73.23.Hk, 85.85.+j.
https://nasplib.isofts.kiev.ua/handle/123456789/116891
We considered resonant electron tunneling in various nanostructures including single wall carbon nanotubes, molecular transistors and quantum wires formed in two-dimensional electron gas. The review starts with a textbook description of resonant tunneling of noninteracting electrons through a double-barrier structure. The effects of electron–electron interaction in sequential and resonant electron tunneling are studied by using Luttinger liquid model of electron transport in quantum wires. The experimental aspects of the problem (fabrication of quantum wires and transport measurements) are also considered. The influence of vibrational and electromechanical effects on resonant electron tunneling in molecular transistors is discussed.
This work was supported in parts by the Swedish VR and SSF, by the Faculty of Science at the University of Gothenburg through the «Nanoparticle» Research Platform, and by the Korean WCU programme funded by MEST through KOSEF (R31-2008-000-10057-0). IVK gratefully acknowledges financial support from a joint grant from the Ministries of Education and Science in Israel and Ukraine and from the grant «Effects of electronic, magnetic and elastic properties in strongly inhomogeneous nanostructures» provided by the National Academy of Sciences of Ukraine. IVK thanks the Department of Physics at the University of Gothenburg and the School of Physics and Astronomy at Tel Aviv University for hospitality.
en
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Физика низких температур
Квантовые жидкости и квантовые кристаллы
Resonant tunneling of electrons in quantum wires
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Resonant tunneling of electrons in quantum wires
spellingShingle Resonant tunneling of electrons in quantum wires
Krive, I.V.
Palevski, A.
Shekhter, R.I.
Jonson, M.
Квантовые жидкости и квантовые кристаллы
title_short Resonant tunneling of electrons in quantum wires
title_full Resonant tunneling of electrons in quantum wires
title_fullStr Resonant tunneling of electrons in quantum wires
title_full_unstemmed Resonant tunneling of electrons in quantum wires
title_sort resonant tunneling of electrons in quantum wires
author Krive, I.V.
Palevski, A.
Shekhter, R.I.
Jonson, M.
author_facet Krive, I.V.
Palevski, A.
Shekhter, R.I.
Jonson, M.
topic Квантовые жидкости и квантовые кристаллы
topic_facet Квантовые жидкости и квантовые кристаллы
publishDate 2010
language English
container_title Физика низких температур
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
format Article
description We considered resonant electron tunneling in various nanostructures including single wall carbon nanotubes, molecular transistors and quantum wires formed in two-dimensional electron gas. The review starts with a textbook description of resonant tunneling of noninteracting electrons through a double-barrier structure. The effects of electron–electron interaction in sequential and resonant electron tunneling are studied by using Luttinger liquid model of electron transport in quantum wires. The experimental aspects of the problem (fabrication of quantum wires and transport measurements) are also considered. The influence of vibrational and electromechanical effects on resonant electron tunneling in molecular transistors is discussed.
issn 0132-6414
url https://nasplib.isofts.kiev.ua/handle/123456789/116891
citation_txt Resonant tunneling of electrons in quantum wires / I.V. Krive, A. Palevski, R.I. Shekhter, and M. Jonson // Физика низких температур. — 2010. — Т. 36, № 2. — С. 155-180. — Бібліогр.: 149 назв. — англ.
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AT palevskia resonanttunnelingofelectronsinquantumwires
AT shekhterri resonanttunnelingofelectronsinquantumwires
AT jonsonm resonanttunnelingofelectronsinquantumwires
first_indexed 2025-12-07T13:29:34Z
last_indexed 2025-12-07T13:29:34Z
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