Electron attachment to atomic hydrogen on the surface of liquid ⁴He

We demonstrate a possibility that helium surface electrons at cryogenic temperatures can be used as a
 new source of very low energy electrons. Since both electrons (e¯) and hydrogen atoms (H) are bound on liquid
 helium surface, two-dimensional mixture gas of these two species is...

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Опубліковано в: :Физика низких температур
Дата:2008
Автори: Arai, T., Yayama, H., Kono, K.
Формат: Стаття
Мова:Англійська
Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2008
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Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/116927
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Electron attachment to atomic hydrogen on the surface
 of liquid ⁴He / T. Arai, H. Yayama, K. Kono // Физика низких температур. — 2008. — Т. 34, № 4-5. — С. 496–503. — Бібліогр.: 28 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Arai, T.
Yayama, H.
Kono, K.
author_facet Arai, T.
Yayama, H.
Kono, K.
citation_txt Electron attachment to atomic hydrogen on the surface
 of liquid ⁴He / T. Arai, H. Yayama, K. Kono // Физика низких температур. — 2008. — Т. 34, № 4-5. — С. 496–503. — Бібліогр.: 28 назв. — англ.
collection DSpace DC
container_title Физика низких температур
description We demonstrate a possibility that helium surface electrons at cryogenic temperatures can be used as a
 new source of very low energy electrons. Since both electrons (e¯) and hydrogen atoms (H) are bound on liquid
 helium surface, two-dimensional mixture gas of these two species is available on the surface. We found
 that low energy collision of e¯ and H drives electron attachment to form a negative hydrogen ion (H¯) in the
 mixture. From our temperature dependence measurement of the reaction rate, it was found that another H
 atom participate in the reaction. Namely, the reaction is expressed as H + H + e¯ → H¯ + H. Possible reaction
 mechanisms are discussed in terms of direct three-body process and dissociative attachment process. Measurements
 in applied magnetic field (B) show that the reaction rate coefficient is suppressed as ~ B⁻². This
 implies that electron spin singlet collision is relevant for electron attachment.
first_indexed 2025-12-07T16:39:12Z
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last_indexed 2025-12-07T16:39:12Z
publishDate 2008
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
record_format dspace
spelling Arai, T.
Yayama, H.
Kono, K.
2017-05-18T11:14:15Z
2017-05-18T11:14:15Z
2008
Electron attachment to atomic hydrogen on the surface
 of liquid ⁴He / T. Arai, H. Yayama, K. Kono // Физика низких температур. — 2008. — Т. 34, № 4-5. — С. 496–503. — Бібліогр.: 28 назв. — англ.
0132-6414
PACS: 67.63.Gh;67.25.–k;68.03–g
https://nasplib.isofts.kiev.ua/handle/123456789/116927
We demonstrate a possibility that helium surface electrons at cryogenic temperatures can be used as a
 new source of very low energy electrons. Since both electrons (e¯) and hydrogen atoms (H) are bound on liquid
 helium surface, two-dimensional mixture gas of these two species is available on the surface. We found
 that low energy collision of e¯ and H drives electron attachment to form a negative hydrogen ion (H¯) in the
 mixture. From our temperature dependence measurement of the reaction rate, it was found that another H
 atom participate in the reaction. Namely, the reaction is expressed as H + H + e¯ → H¯ + H. Possible reaction
 mechanisms are discussed in terms of direct three-body process and dissociative attachment process. Measurements
 in applied magnetic field (B) show that the reaction rate coefficient is suppressed as ~ B⁻². This
 implies that electron spin singlet collision is relevant for electron attachment.
This work has been supported by President’s Special Research Grant of RIKEN, Grant-in-Aid for Scientific Research (B) from JSPS and Grant-in-Aid for Exploratory Research from MEXT. We thank T. Shiino and T. Mitsui for partial collaboration. We are grateful to A. Wrl and P. Leiderer for VCE installation and valuable discussions. We are grateful to T. Kumada for informing us the charge-induced dipole interaction. This work was carried out under the Joint Research Program of the Institute for Solid State Physics, University of Tokyo.
en
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Физика низких температур
Электроны над жидким гелием
Electron attachment to atomic hydrogen on the surface of liquid ⁴He
Article
published earlier
spellingShingle Electron attachment to atomic hydrogen on the surface of liquid ⁴He
Arai, T.
Yayama, H.
Kono, K.
Электроны над жидким гелием
title Electron attachment to atomic hydrogen on the surface of liquid ⁴He
title_full Electron attachment to atomic hydrogen on the surface of liquid ⁴He
title_fullStr Electron attachment to atomic hydrogen on the surface of liquid ⁴He
title_full_unstemmed Electron attachment to atomic hydrogen on the surface of liquid ⁴He
title_short Electron attachment to atomic hydrogen on the surface of liquid ⁴He
title_sort electron attachment to atomic hydrogen on the surface of liquid ⁴he
topic Электроны над жидким гелием
topic_facet Электроны над жидким гелием
url https://nasplib.isofts.kiev.ua/handle/123456789/116927
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AT yayamah electronattachmenttoatomichydrogenonthesurfaceofliquid4he
AT konok electronattachmenttoatomichydrogenonthesurfaceofliquid4he