Quantum oscillations of resistivity in bismuth nanowires

We studied the influence of uniaxial deformation on the transport properties of bismuth wires in the wide range of temperatures. Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations on the dependence of resistance under uniaxial strain...

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Published in:Физика низких температур
Date:2010
Main Authors: Condrea, E., Gilewski, A.
Format: Article
Language:English
Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2010
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/116969
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Quantum oscillations of resistivity in bismuth nanowires / E. Condrea, A. Gilewski // Физика низких температур. — 2010. — Т. 36, № 3. — С. 316-320. — Бібліогр.: 17 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:We studied the influence of uniaxial deformation on the transport properties of bismuth wires in the wide range of temperatures. Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations on the dependence of resistance under uniaxial strain at T = 4.2 K. Amplitude of oscillations is significant (38%) at helium temperature and becomes smearing at T = 77 K. Observed oscillations originate from quantum size effect. Evaluation of period of oscillations allows us to identify the groups of carriers involved in transport. Calculated periods of 42.2 and 25.9 nm satisfy approximatively the ratio 2:1 for two experimentally observed sets of oscillations from light and heavy electrons.
ISSN:0132-6414