Quantum oscillations of resistivity in bismuth nanowires
We studied the influence of uniaxial deformation on the transport properties of bismuth wires in the wide range of temperatures. Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations on the dependence of resistance under uniaxial strain...
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| Опубліковано в: : | Физика низких температур |
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| Дата: | 2010 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2010
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/116969 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Quantum oscillations of resistivity in bismuth nanowires / E. Condrea, A. Gilewski // Физика низких температур. — 2010. — Т. 36, № 3. — С. 316-320. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | We studied the influence of uniaxial deformation on the transport properties of bismuth wires in the wide range of temperatures. Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations on the dependence of resistance under uniaxial strain at T = 4.2 K. Amplitude of oscillations is significant (38%) at helium temperature and becomes smearing at T = 77 K. Observed oscillations originate from quantum size effect. Evaluation of period of oscillations allows us to identify the groups of carriers involved in transport. Calculated periods of 42.2 and 25.9 nm satisfy approximatively the ratio 2:1 for two experimentally observed sets of oscillations from light and heavy electrons.
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| ISSN: | 0132-6414 |